2N3584 GE Search Results

2N3584

Contextual Info: 2N3584 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3584 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE TO - 66 2.0 A 250 V o m lc < MAXIMUM RATINGS INCHES Pd is s 35 W @ Tc # 25 °C Tj -65 °C to +200 °C

Contextual Info: m 2N3584 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3584 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES lc 2.0 A V ce 250 V P diss 35 W @ Tc = 25 °C Tj -65 °C to +200 °C

2N3584

Abstract: 2N3584 JANTX
Contextual Info: 2N3584 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

transistor t2a 82

Abstract: ZT1482 ZT1484 2N2223 t2a transistor ZT1490 n3055 2N3055 TRANSISTOR 2n3055 2N3440
Contextual Info: SILICON TRANSISTORS High Voltage n-p-n The transistors listed in the table below have maximum coliector-emitter voltage ratings of 100 volts or higher and may therefore be used in applications where high voltages are encountered. Further information on these transistors can be found on the page indicated in the last column of the table, or on request from Ferranti Ltd.

CV7753

Abstract: ZT1701 CV7644 ZT1483 ZT187 CV7371 CV7373 ZT80 ZT83 ZT84
Contextual Info: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3

Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

2N5415

Abstract: 2N3055 RCA 2N3054 transistor BUX66C rca 2n3055 RCA 40250 2N3439 2N3440 rca transistor 508 2N6079
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . . f r to 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]

rca 2n3055

Abstract: rca 40327 RCA 2N3055 transistor 2n3055 audio amplifier application note 2n3055 application note RCA 40636 transistor 40327 rca 2N3439 RCA 2N3055 transistor RCA 528
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . . f r t o 2 0 M H z . . . P y t o 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]

MC 151 pnp

Abstract: 05Z5 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4698 2N4900
Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) « 40-425V PNP Power Transistors NFN Typ* No. comptait«»! 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4699 2N4900 2N5344 2N3767 2N4910 2N4911 2N4912 VCE(SAT) 0IC/IB (V0A/A) VCEO <»»>

5N520

Contextual Info: General Transistor Corporation CASE le MAX V c e o (s u s ) = NPN Power Transistors VCE(SAT) IC/1B (V®A/A) VBE IC/VCE (V®A/V) 25-100 @ .5/4 40-200 @.5/10 25-100 @1/10 25-100 @1/10 1 @ 5/.05 5 @ 1/.125 .75 @ 1/.125 .75 @ 1/.125 1.7 @.5/4 1.4@ 1/10 .25

RCA 2N3055 transistor

Abstract: 2N3055 RCA transistor 2N 3440 40321 rca 40327 RCA 40325 2n3055 RCA data 300V transistor pnp 2a 2N5415 rca 40636
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 30 A . . . f r t o 20 M H z . . . P y to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]

RCA TO-5

Abstract: 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C t o 15 A . . . P f t o 2 0 0 W . . . V C E t o 125 V 1« “ -3.5 max. Py«10W m ax . ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. P y - 40 W max. V E R S A W ATT

BF357

Abstract: BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent
Contextual Info: Silect High Frequency Transistors TT MHz Sj o < Maximum Ratings Device Type hFE Case outline B V PTOT Ic VCE in brackets CBO ic V V mA mW min. max. mA V 1 10 BF594 (9) 30 20 30 250 65 220 Case Outlines BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38

ZT2120

Abstract: ZT43 ZT1702 100-C ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484
Contextual Info: SILICON TRANSISTORS Power n-p-n Maximum Ratings Type No. v CBO v CEO(sus) Characteristics Dissipation Watts Ic fa Typical R (sat> (max.) hFE Jedec Outline volts volts amps •ZT1479 •ZT1480 •ZT1481 •ZT1482 •ZT1483 •ZT1484 •ZT1485 •ZT1486 •ZT1487

a/TO111

Contextual Info: Microsemi NPN Transistors Part N um ber JA N S2N3997 JA N S2N3998 JA N S2N3999 JA N TX2N 2880 JA N TX2N 3749 JA N TX2N 3996 JA N TX2N 3997 JAN TX2N 3998 JAN TX2N 3999 JA N TXV2N 2880 JA N TXV2N 3749 JA N TXV2N 3996 JA N TXV2N 3997 JA N TXV2N 3998 JA N TXV2N 3999

RCA 40874

Abstract: 2N6175 2N3055 specification 2N6179 2N6474 JAN 2n3055 pnp transistor 2N6175 rca 2n1485 2N5296 RCA rca Transistors 4a 322
Contextual Info: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. P y “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. jTO-39»* lc > - 1 A max. P y - 10 W max. (TO-39 * 4 2 x4 2 4 2 x4 2

ZT1483

Abstract: ZT1701 BCW23 2N929 ZT2120 2N2475 BCW21 2N3707 BC107 BC108
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed

2n222a

Abstract: CV7644 ZTX326 2n3600 CV7371 CV7373 ZT80 ZT83 ZT1481 ZT86
Contextual Info: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3

RCA 40411 transistor

Abstract: rca 40411 audio amplifier with rca 40411 RCA 528 transistor 40411 40411 transistor 40411 RCA 40250 transistor BDY29 RCA 2N6254
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

ZT2120

Abstract: 2N2475 100-C ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484 ZT1485
Contextual Info: SILICON TRANSISTORS Power n-p-n Maximum Ratings Type No. v CBO v CEO(sus) Characteristics Dissipation Watts Ic fa Typical R(sat> (max.) hFE Jedec Outline volts volts amps •ZT1479 •ZT1480 •ZT1481 •ZT1482 •ZT1483 •ZT1484 •ZT1485 •ZT1486 •ZT1487

rca 40250

Abstract: RCA transistor 40312 RCA 40250 transistor 40310 rca 40372 RCA RCA 40310 rca 40372 Transistor rca 40372 RCA 40316 40250 RCA
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. •2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3 .S A m ax. lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax . le - 7 A m ax.

1040B

Abstract: 2N3910 svt6062 2n5100
Contextual Info: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.