CV7753
Abstract: ZT1701 CV7644 ZT1483 ZT187 CV7371 CV7373 ZT80 ZT83 ZT84
Contextual Info: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3
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transistor t2a 82
Abstract: ZT1482 ZT1484 2N2223 t2a transistor ZT1490 n3055 2N3055 TRANSISTOR 2n3055 2N3440
Contextual Info: SILICON TRANSISTORS High Voltage n-p-n The transistors listed in the table below have maximum coliector-emitter voltage ratings of 100 volts or higher and may therefore be used in applications where high voltages are encountered. Further information on these transistors can be found on the page indicated in the last column of the table, or on request from Ferranti Ltd.
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ZT1483
Abstract: ZT1701 BCW23 2N929 ZT2120 2N2475 BCW21 2N3707 BC107 BC108
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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2n222a
Abstract: CV7644 ZTX326 2n3600 CV7371 CV7373 ZT80 ZT83 ZT1481 ZT86
Contextual Info: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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ZT2120
Abstract: ZT43 ZT1702 100-C ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484
Contextual Info: SILICON TRANSISTORS Power n-p-n Maximum Ratings Type No. v CBO v CEO(sus) Characteristics Dissipation Watts Ic fa Typical R (sat> (max.) hFE Jedec Outline volts volts amps •ZT1479 •ZT1480 •ZT1481 •ZT1482 •ZT1483 •ZT1484 •ZT1485 •ZT1486 •ZT1487
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2N222A
Abstract: ZT1702 N2222 ZT1483 ZT1701 2N2270 equivalent 2n3600 ZT280 ZT1482 CV7373
Contextual Info: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series
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ZT2120
Abstract: 2N2475 100-C ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484 ZT1485
Contextual Info: SILICON TRANSISTORS Power n-p-n Maximum Ratings Type No. v CBO v CEO(sus) Characteristics Dissipation Watts Ic fa Typical R(sat> (max.) hFE Jedec Outline volts volts amps •ZT1479 •ZT1480 •ZT1481 •ZT1482 •ZT1483 •ZT1484 •ZT1485 •ZT1486 •ZT1487
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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