2N2904 B Search Results

2N2904

Abstract: 2N2904 PNP Transistor 2N2904J 2N2904JV 2N2904JX
Contextual Info: 2N2904 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2904J • JANTX level (2N2904JX)

MMBT3905

Abstract: MMBT2904 2N2906 to-92 2N1132A LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905
Contextual Info: NATL SEMICOND DISCRETE SEE 3> • b501130 0037777 2 ■ T^27~0J PNP General Purpose Transistors by Ascending Vceo (continued) V Ceo(V) V cbo(V) Min Min BCF29 BCF30 BCW 61A 32 32 32 2N1132A 2N2904 2N2905 2N2906 2N2907 2N3905 2N3906 2N4037 2N4402 2N4403 2N5365

2N1132A

Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743

2N4033

Abstract: 2N3494 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637

itt 2907A

Abstract: st 2n 2907a 2N2905 MOTOROLA itt 2907 2N2907A itt 2n2222 2n2907 Motorola st 2n 2905a 2N3485 2N2907 2N2907A
Contextual Info: MOTORCLA SC XSTRS/R F 12E D I b3fc.72S4 G0flb57fci 5 | PNP SILICON AN N U LAR HERMETIC TRAN SISTO RS 2N2904, A thru . . designed for high-speed sw itching circuits, D C to V H F amplifier applica­ tions and com plem entary circuitry. 2N2907, A 2N3485, A, 2N3486, A

D2T2904

Abstract: itt 2n2905 D2T2904A
Contextual Info: TYPES D2T2904, D2T2904A, D2T2905, D2T2905A DUAL P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7311971, M A R C H 1973 TWO G E N E R A L PU RPO SE T R A N S IS T O R S IN O N E P A C K A G E • Each Triode Electrically Similar to 2N2904, 2N 2904A,

2n3072

Contextual Info: ti CENTRAL SEM ICON DU CTOR : 1VÖVVOJ U CINI R A L D E I nû'î'JtiB ODDOSSG 3 T ¿ v n h an r t *j* 7 / «•* 6 i. ci r nono^zzo ~ O* StrtlCUN Ü UtTÜR V eb hFE at •c V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35

2n697

Abstract: 2N956 2N2905
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CEO h FE Coi Cob V CE(sat) h ^off PD PF MHz ns Ta 25°C MAX MIN MAX mW 250 285 800 3.0 TO-5

2N3440 MOTOROLA

Abstract: CV8616 2N2222A motorola 2N2905 MOTOROLA BC107-108-109 2n3439 motorola 2N3501 MOTOROLA 2N2222A JANTX bc107108109 motorola transistor 2N2907A
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Choppers Devices are listed in decreasing V (b r )E B O - Offset Voltage Package TO-46 Device 2N2946 2N2946A 2N5230 2N5231 2N2945A 2N2945 2N5229 V(BR)EBO Min 40 40 30 30 25 25 15 V(BR)ECO 35 35 20 20 20 20 10 Min

2N3638

Abstract: MPS8093 2N3072 MPS6534 motorola 2N3133 MOTOROLA 2n3638a 2N5221 2n3133 2n3136 2n2907a motorola
Contextual Info: MOTOROLA SC -CDIODES/OPTO} ' 34 ]>F|b3t,75SS 3037^70 H 6367255 M O T O R O L A SC (DIODES/OPTO f 3^C ~ 37978 T^3 7 -/7 SILICO N SM ÂLL-SIG NAL TR A N SISTO R DICE (continued) 2C2907A DIE NO. — pnp LINE SOURCE — DMB151 C« This die provides performance equal to or better than that of the following

2N2907A FAIRCHILD SEMICONDUCTOR

Abstract: 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE 3 4 b cIL,7M 00S7S3L: 7 3 4 69 67 4 F A I R C H I L D S E M I C O N D U C T O R 84D 27536 2N2710/FTS02710 ^ 3ir^ NPN Small Signal High Speed Low Power Saturating Switch Transistor F A IR C H IL D A Schlumberger Company PACKAGE

bipolarics

Abstract: 2N2904 BPT23E02
Contextual Info: BIPOLARICS, INC. Part Number BPT23E02 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High DESCRIPTION AND APPLICATIONS: Output Power 2 Watts @ 2.3 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 320 mA t Bipolarics' BPT23E02 is a high performance silicon bipolar transistor

2N5416 MOTOROLA

Abstract: CV8616 2N3501 MOTOROLA 2N5415 MOTOROLA 2N5681 motorola 2N2368 2N3114 2N4033 2N5231 2N4236 MOTOROLA
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.

2n2222a SOT23

Abstract: 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1132 2N1483 2N1484
Contextual Info: L -S tl'-O f " T - 3 3 - o7 iS E M E L A B MANUFACTURING • 37E SEMELAB LTD 6133167 □ □ □0CH 7 Package v CEO "2N 708'\ CV-0 2N 697 CV-0 2N 930 4 CV-0 2N1132 CV-0 2N1483/ CV-0 BS-0 NPN NPN NPN PNP NPN T018 T039 T018 T039 T08 15 40 45 35 40 0.1 0.5 0.1

TIPL760

Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL760A
Contextual Info: TIPL760, TIPL760A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 75 W at 25°C Case Temperature

BF177

Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338
Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20

by205

Abstract: BY205-400
Contextual Info: TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature

Contextual Info: TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 100 W at 25°C Case Temperature

NPN pnp MATCHED PAIRS 2n2905A 2N2219A

Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW

MHQ6002

Abstract: 2N2219 transistor MHQ6001 2N2218 transistor transistor 2N2905 2N2218 2N2219 2N2904 2N2905 TRANSISTOR 2n2904
Contextual Info: MHQ6001 SILICON MHQ6002 QUAD DUAL-IN-LINE HERMETIC SILICON ANNULAR COMPLEMENTARY PAIR TRANSISTORS . . . designed for high-speed switching circuits, DC to applications and complementary circuitry. • DC Current Gain Specified — 1.0 to 300 mAdc • High Current-Gain—Bandwidth Product f-f = 400 MHz (Typ) @ I q = 50 mAdc

BFS98

Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw­ ing •c mA ■ b mA min. max. -1 5 0 -1 5 0

transistor t05

Abstract: TIS60m 2N1507 2N1613 2N1711 2N1889 2N1890 2N1893 2N696 2N697
Contextual Info: Case Type No. C onstruction see note 1 Silicon Transistors Maximum Ratings at25°C amb. SPEC IAL Characteristics FEATURES h hFE V CB V V CE V v EB V •c A 15 2 30 15 2 Min. Ptot W mA 0-2 10 50 20 0-2 10 50 20 Max. V CE(SAT) Min. mA 's mA Max. mA M c/s 200

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

MPS6502

Abstract: ATP01 mc 6501 2N2219 transistor substitute baw 92 MPQ6002 TRANSISTOR C-111 2N2219 transistor MP06001 2N2219
Contextual Info: MPQ6001 SILICON MPQ6002 MPQ6501 MPQ6502 QUAD DUAL-IN LIN E SILICO N CO M PLEM EN TARY PA IR T R A N SISTO R S QUAD DUAL-IN LIN E SILIC O N A N N ULAR CO M PLEM EN TARY PA IR TR A N SISTO R S . . . designed for high speed switching circuits, DC to V H F amplifier