BIPOLARICS Search Results

bipolarics

Contextual Info: BIPOLARICS, INC. Part Number BPT10E01 SILICON MICROWAVE POWER TRANSISTOR 4/4/94 PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 30.0 dBm, P1dB @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 200 mA t • High Gain

BPT42E04

Abstract: transistor pt 42
Contextual Info: BIPOLARICS, INC. Part Number BPT42E04 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 4 Watts @ 4.2 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 800 mA t Bipolarics' BPT42E04 is a high performance silicon bipolar transistor

Contextual Info: BIPOLARICS, INC. Part Number BPT1E4 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 4 W @ 1 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 800 mA t Bipolarics' BPT1E4 is a high performance silicon bipolar transistor

BPT18B04

Contextual Info: BIPOLARICS, INC Part Number BPT18B04 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 4 W @ 1.8 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 320 m A t • High Gain GPE = 6.5 dB @ 1.8 GHz

BPT30V1E10

Contextual Info: BIPOLARICS, INC. Part Number BPT30V1E10 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 10 W @ 1 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 1.6 A t Bipolarics' BPT30V1E10 is a high performance silicon bipolar transistor

Contextual Info: BIPOLARICS, INC Part Number BPT17B04 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 4 W @ 1.7 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 320 mA t • High Gain GPE = 6.5 dB @ 1.7 GHz

BPT23E05

Abstract: BPT42E05
Contextual Info: BIPOLARICS, INC. Part Number BPT23E05 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 5 Watts @ 4.2 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 1.0 A t Bipolarics' BPT42E05 is a high performance silicon bipolar transistor

BPT20B12

Contextual Info: BIPOLARICS, INC Part Number BPT20B12 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 12 W @ 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 960 m A t • High Gain GPE = 7.5 dB @ 2.0 GHz

micro-x mhz ghz microwave

Abstract: ba 5888 MMIC Amplifier Micro-X GHZ micro-X Package
Contextual Info: BIPOLARICS, INC. Part Number BA6 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION DESCRIPTION AND APPLICATIONS: Bipolarics' BA6 is a high performance MMIC amplifier designed for general purpose use in 50Ω systems over a

BPT18E05

Contextual Info: BIPOLARICS, INC. Part Number BPT18E05 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 5 Watts @ 1.8 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 1.0 A t Bipolarics' BPT18E05 is a high performance silicon bipolar transistor

transistor p1d

Abstract: P1D transistor BPT15V1E1E
Contextual Info: BIPOLARICS, INC. Part Number BPT15V1E1E SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' BPT15V1E1E is a high performance silicon bipolar transistor intended for medium power linear and Class C applications at VHF, UHF and microwave frequencies in 7.2

BPT17B02

Contextual Info: BIPOLARICS, INC Part Number BPT17B02 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 2 W @ 1.7 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 160 mA t • High Gain GPE = 7.5 dB @ 1.7 GHz

Contextual Info: BIPOLARICS, INC. Part Number BPT16E05 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 30.0 dBm, P1dB @ 1 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 200 mA t • High Gain Bipolarics' BPT16E05 is a high performance silicon bipolar transistor intended for medium power applications at VHF and UHF

BPT20B03

Contextual Info: BIPOLARICS, INC Part Number BPT20B03 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 3 W @ 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 240 mA t • High Gain GPE = 7.5 dB @ 2.0 GHz

all transistor

Abstract: transistor Common Base configuration Bipolarics high power transistor microwave diode ratings transistor high power silicon diode p 602 Silicon Transistor transistor Common collector configuration
Contextual Info: BIPOLARICS, INC Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 20 W @ 1.7 to 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 3200 mA t • High Gain

BPT1819E016

Abstract: BPT1819E16
Contextual Info: BIPOLARICS, INC. Part Number BPT1819E16 NPN SILICON MICROWAVE POWER TRANSISTORS PRODUCT DATA SHEET FEATURES: • • • • • DESCRIPTION AND APPLICATIONS: High Output Power 16 W @ 1.8 GHz High Gain Bandwidth Product f = 6.0 GHz typ @ I C = 2.56 A t High Gain

bipolarics

Abstract: BMT0912B150
Contextual Info: BIPOLARICS, INC Part Number BMT0912B150 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 150 W @ 0.9 to 1.2 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 16.5 A t

"matched transistor"

Abstract: 6 PIN TRANSISTORS 566
Contextual Info: BIPOLARICS, INC. Part Number BTA105M2 NPN SILICON MATCHED MICROWAVE TRANSISTORS ADVANCE DATA SHEET FEATURES: High Gain Bandwidth Product f = 10 GHz t • • Matched Performance ∆V BE = 25 mV ∆ß = 0.6:1 max DESCRIPTION AND APPLICATIONS: The BTA105M2 is a monolithic silicon NPN matched

B30V1320

Abstract: transistor j 127
Contextual Info: BIPOLARICS, INC. Part Number B30V1320 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 8W @ 1.0 GHz • High Gain Bandwidth Product Bipolarics' B30V1320 is a high performance, low cost silicon bipolar

bipolarics

Abstract: BPT0336
Contextual Info: BIPOLARICS, INC. Part Number BPT0336 NPN SILICON MICROWAVE POWER TRANSISTORS PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 3.0 GHz typ @ I C = 1.0 A t • High Gain GPE = 8.0 dB @ 1.0 GHz • High thermal efficiency BeO 6 Lead Flange package

power transistor

Abstract: BMT0610B04
Contextual Info: BIPOLARICS, INC Part Number BMT0610B04 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 4 W @ 0.6 to 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 640 mA t • High Gain

BPT20B12

Contextual Info: BIPOLARICS, INC Part Number BPT20B12P SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 12 W @ 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 960 m A t • High Gain GPE = 7.5 dB @ 2.0 GHz

BMT0912B80-40

Abstract: amplifier TRANSISTOR 12 GHZ transistor military
Contextual Info: BIPOLARICS INC. Part Number BMT0912B80-40 SILICON MICROWAVE POWER TRANSISTOR Package 40: 0.400” x 0.400” 2 Lead Flange FEATURES: • P = 80 W @ 0.9 - 1.2 GHz • High Gain out GPE = 7.5 dB to 8.2 dB • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 4.6 A

transistor h23

Abstract: transistor 5207 BPT0333 IC A 2388
Contextual Info: BIPOLARICS, INC. Part Number BPT0333 NPN SILICON MICROWAVE POWER TRANSISTORS PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 3.0 GHz typ @ I C = 500 mA t • High Gain GPE = 9.0 dB @ 1.0 GHz • High thermal efficiency BeO 6 Lead Flange package