BIPOLARICS Search Results

BIPOLARICS Result Highlights (5)

Part	Manufacturer	Description	Download
GT50J123	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet
GT30J122A	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS	Datasheet
GT30J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J341	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS	Datasheet

BIPOLARICS Datasheets (232)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
B12V105	Bipolarics	NPN LOW NOISE SILICON MICROWAVE TRANSISTOR	Original	PDF	38.64KB	8
B12V10500	Bipolarics	NPN LOW NOISE SILICON MICROWAVE TRANSISTOR	Original	PDF	38.64KB	8
B12V10502	Bipolarics	NPN LOW NOISE SILICON MICROWAVE TRANSISTOR	Original	PDF	38.64KB	8
B12V10514	Bipolarics	NPN LOW NOISE SILICON MICROWAVE TRANSISTOR	Original	PDF	38.64KB	8
B12V10535	Bipolarics	NPN LOW NOISE SILICON MICROWAVE TRANSISTOR	Original	PDF	38.64KB	8
B12V105 92	Bipolarics	General Purpose Bipolar Transistor, NPN, 12V, TO-92, 3-Pin	Original	PDF	38.65KB	8
B12V10592	Bipolarics	NPN LOW NOISE SILICON MICROWAVE TRANSISTOR	Original	PDF	38.64KB	8
B12V114	Bipolarics	NPN Low Noise Silicon Microwave Transistor	Original	PDF	34.95KB	7
B12V114B	Bipolarics	NPN low noise silicon microwave transistor	Original	PDF	73.35KB	1
B15V140	Bipolarics	Medium Power Silicon Microwave Transistor	Original	PDF	44.13KB	7
B15V140B	Bipolarics	Silicon microwave power transistor	Original	PDF	17.27KB	2
B15V180	Bipolarics	Medium power silicon microwave transistor	Original	PDF	23.05KB	2
B15V18008	Bipolarics	Silicon microwave power transistor	Original	PDF	19.45KB	3
B15V180C	Bipolarics	Silicon microwave power transistor	Original	PDF	8.14KB	1

B20V1160	Bipolarics	Silicon microwave power transistor	Original	PDF	22.67KB	2
B20V1160B	Bipolarics	Silicon microwave power transistor	Original	PDF	23.12KB	2
B20V1320B	Bipolarics	Silicon microwave power transistor	Original	PDF	7.53KB	1
B20V140	Bipolarics	SILICON MICROWAVE POWER TRANSISTOR	Original	PDF	21.11KB	2
B20V140	Bipolarics	Medium power silicon microwave transistor	Original	PDF	21.1KB	2
B20V140B	Bipolarics	Medium power silicon microwave transistor	Original	PDF	27.22KB	2

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BIPOLARICS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
bipolarics Contextual Info: BIPOLARICS, INC. Part Number BPT10E01 SILICON MICROWAVE POWER TRANSISTOR 4/4/94 PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 30.0 dBm, P1dB @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 200 mA t • High Gain	Original	BPT10E01 BPT10E01 BPT10E02 BPT10E04, bipolarics	PDF
BPT42E04 Abstract: transistor pt 42 Contextual Info: BIPOLARICS, INC. Part Number BPT42E04 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 4 Watts @ 4.2 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 800 mA t Bipolarics' BPT42E04 is a high performance silicon bipolar transistor	Original	BPT42E04 BPT42E04 transistor pt 42	PDF
Contextual Info: BIPOLARICS, INC. Part Number BPT1E4 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 4 W @ 1 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 800 mA t Bipolarics' BPT1E4 is a high performance silicon bipolar transistor	Original		PDF
BPT18B04 Contextual Info: BIPOLARICS, INC Part Number BPT18B04 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 4 W @ 1.8 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 320 m A t • High Gain GPE = 6.5 dB @ 1.8 GHz	Original	BPT18B04 BPT18B04	PDF
BPT30V1E10 Contextual Info: BIPOLARICS, INC. Part Number BPT30V1E10 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 10 W @ 1 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 1.6 A t Bipolarics' BPT30V1E10 is a high performance silicon bipolar transistor	Original	BPT30V1E10 BPT30V1E10 10watt	PDF
Contextual Info: BIPOLARICS, INC Part Number BPT17B04 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 4 W @ 1.7 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 320 mA t • High Gain GPE = 6.5 dB @ 1.7 GHz	Original	BPT17B04	PDF
BPT23E05 Abstract: BPT42E05 Contextual Info: BIPOLARICS, INC. Part Number BPT23E05 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 5 Watts @ 4.2 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 1.0 A t Bipolarics' BPT42E05 is a high performance silicon bipolar transistor	Original	BPT23E05 BPT42E05 BPT42E05 BPT23E05	PDF
BPT20B12 Contextual Info: BIPOLARICS, INC Part Number BPT20B12 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 12 W @ 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 960 m A t • High Gain GPE = 7.5 dB @ 2.0 GHz	Original	BPT20B12 BPT20B12	PDF
micro-x mhz ghz microwave Abstract: ba 5888 MMIC Amplifier Micro-X GHZ micro-X Package Contextual Info: BIPOLARICS, INC. Part Number BA6 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION DESCRIPTION AND APPLICATIONS: Bipolarics' BA6 is a high performance MMIC amplifier designed for general purpose use in 50Ω systems over a	Original		PDF
BPT18E05 Contextual Info: BIPOLARICS, INC. Part Number BPT18E05 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 5 Watts @ 1.8 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 1.0 A t Bipolarics' BPT18E05 is a high performance silicon bipolar transistor	Original	BPT18E05 BPT18E05	PDF
transistor p1d Abstract: P1D transistor BPT15V1E1E Contextual Info: BIPOLARICS, INC. Part Number BPT15V1E1E SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' BPT15V1E1E is a high performance silicon bipolar transistor intended for medium power linear and Class C applications at VHF, UHF and microwave frequencies in 7.2	Original	BPT15V1E1E BPT15V1E1E transistor p1d P1D transistor	PDF
BPT17B02 Contextual Info: BIPOLARICS, INC Part Number BPT17B02 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 2 W @ 1.7 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 160 mA t • High Gain GPE = 7.5 dB @ 1.7 GHz	Original	BPT17B02 BPT17B02	PDF
Contextual Info: BIPOLARICS, INC. Part Number BPT16E05 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 30.0 dBm, P1dB @ 1 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 200 mA t • High Gain Bipolarics' BPT16E05 is a high performance silicon bipolar transistor intended for medium power applications at VHF and UHF	Original	BPT16E05 BPT16E05 BPT16E05,	PDF
BPT20B03 Contextual Info: BIPOLARICS, INC Part Number BPT20B03 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 3 W @ 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 240 mA t • High Gain GPE = 7.5 dB @ 2.0 GHz	Original	BPT20B03 BPT20B03	PDF

all transistor Abstract: transistor Common Base configuration Bipolarics high power transistor microwave diode ratings transistor high power silicon diode p 602 Silicon Transistor transistor Common collector configuration Contextual Info: BIPOLARICS, INC Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 20 W @ 1.7 to 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 3200 mA t • High Gain	Original	BMT1720B20 all transistor transistor Common Base configuration Bipolarics high power transistor microwave diode ratings transistor high power silicon diode p 602 Silicon Transistor transistor Common collector configuration	PDF
BPT1819E016 Abstract: BPT1819E16 Contextual Info: BIPOLARICS, INC. Part Number BPT1819E16 NPN SILICON MICROWAVE POWER TRANSISTORS PRODUCT DATA SHEET FEATURES: • • • • • DESCRIPTION AND APPLICATIONS: High Output Power 16 W @ 1.8 GHz High Gain Bandwidth Product f = 6.0 GHz typ @ I C = 2.56 A t High Gain	Original	BPT1819E16 BPT1819E016 BPT1819E16	PDF
bipolarics Abstract: BMT0912B150 Contextual Info: BIPOLARICS, INC Part Number BMT0912B150 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 150 W @ 0.9 to 1.2 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 16.5 A t	Original	BMT0912B150 bipolarics BMT0912B150	PDF
"matched transistor" Abstract: 6 PIN TRANSISTORS 566 Contextual Info: BIPOLARICS, INC. Part Number BTA105M2 NPN SILICON MATCHED MICROWAVE TRANSISTORS ADVANCE DATA SHEET FEATURES: High Gain Bandwidth Product f = 10 GHz t • • Matched Performance ∆V BE = 25 mV ∆ß = 0.6:1 max DESCRIPTION AND APPLICATIONS: The BTA105M2 is a monolithic silicon NPN matched	Original	BTA105M2 BTA105M2 "matched transistor" 6 PIN TRANSISTORS 566	PDF
B30V1320 Abstract: transistor j 127 Contextual Info: BIPOLARICS, INC. Part Number B30V1320 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 8W @ 1.0 GHz • High Gain Bandwidth Product Bipolarics' B30V1320 is a high performance, low cost silicon bipolar	Original	B30V1320 B30V1320 transistor j 127	PDF
bipolarics Abstract: BPT0336 Contextual Info: BIPOLARICS, INC. Part Number BPT0336 NPN SILICON MICROWAVE POWER TRANSISTORS PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 3.0 GHz typ @ I C = 1.0 A t • High Gain GPE = 8.0 dB @ 1.0 GHz • High thermal efficiency BeO 6 Lead Flange package	Original	BPT0336 BPT0336 bipolarics	PDF
power transistor Abstract: BMT0610B04 Contextual Info: BIPOLARICS, INC Part Number BMT0610B04 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 4 W @ 0.6 to 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 640 mA t • High Gain	Original	BMT0610B04 power transistor BMT0610B04	PDF
BPT20B12 Contextual Info: BIPOLARICS, INC Part Number BPT20B12P SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 12 W @ 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 960 m A t • High Gain GPE = 7.5 dB @ 2.0 GHz	Original	BPT20B12P BPT20B12 BPT20B12	PDF
BMT0912B80-40 Abstract: amplifier TRANSISTOR 12 GHZ transistor military Contextual Info: BIPOLARICS INC. Part Number BMT0912B80-40 SILICON MICROWAVE POWER TRANSISTOR Package 40: 0.400” x 0.400” 2 Lead Flange FEATURES: • P = 80 W @ 0.9 - 1.2 GHz • High Gain out GPE = 7.5 dB to 8.2 dB • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 4.6 A	Original	BMT0912B80-40 BMT0912B80-40 amplifier TRANSISTOR 12 GHZ transistor military	PDF
transistor h23 Abstract: transistor 5207 BPT0333 IC A 2388 Contextual Info: BIPOLARICS, INC. Part Number BPT0333 NPN SILICON MICROWAVE POWER TRANSISTORS PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 3.0 GHz typ @ I C = 500 mA t • High Gain GPE = 9.0 dB @ 1.0 GHz • High thermal efficiency BeO 6 Lead Flange package	Original	BPT0333 BPT0333 transistor h23 transistor 5207 IC A 2388	PDF

BIPOLARICS Search Results

BIPOLARICS Result Highlights (5)

BIPOLARICS Datasheets (232)

BIPOLARICS Datasheets Context Search

bipolarics

BPT42E04

BPT18B04

BPT30V1E10

BPT23E05

BPT20B12

micro-x mhz ghz microwave

BPT18E05

transistor p1d

BPT17B02

BPT20B03

all transistor

BPT1819E016

bipolarics

"matched transistor"

B30V1320

bipolarics

power transistor

BPT20B12

BMT0912B80-40

transistor h23