MPQ6002N
Abstract: MOTOROLA 2n2218 TRANSISTOR MPQ6002 R01 motorola 2N2905 MOTOROLA 2N2218 MPQ6002I 2N2904 2N2905 MPQ6001N
Contextual Info: MPQ6001,N MPQ6002,N MPQ6501,N MPQ6502.N MOTOROLA QUAD D U AL-IN -LINE SILICON COMPLEMENTARY PAIR TRANSISTORS QUAD D U A L-IN -LIN E SILICON A N N U LA R 4 COMPLEMENTARY PAIR TRANSISTORS . . . designed fo r high-speed sw itch in g c irc u its , DC to V H F a m p lifie r
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mpq6001mpq6002mpq6501mpq6502+12mpq6001nmpq6002i\impq6502n2n22182n2219mpq6002nmotorola 2n2218 transistorr01 motorola2n2905 motorolampq6002i2n29042n2905
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MPS6502
Abstract: ATP01 mc 6501 2N2219 transistor substitute baw 92 MPQ6002 TRANSISTOR C-111 2N2219 transistor MP06001 2N2219
Contextual Info: MPQ6001 SILICON MPQ6002 MPQ6501 MPQ6502 QUAD DUAL-IN LIN E SILICO N CO M PLEM EN TARY PA IR T R A N SISTO R S QUAD DUAL-IN LIN E SILIC O N A N N ULAR CO M PLEM EN TARY PA IR TR A N SISTO R S . . . designed for high speed switching circuits, DC to V H F amplifier
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mpq6001mpq6002mpq6501mpq6502+132n22182n22192n29042n2905o-116mps6502atp01mc 65012n2219 transistor substitutebaw 92transistor c-1112n2219 transistormp06001
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MPQ6700
Abstract: S010M Motorola diodes motorola 6700 PNP
Contextual Info: MOTOROLA Order this document by MPQ670Q/D SEMICONDUCTOR TECHNICAL DATA Quad C om plem entary Pair Transistor M PQ 6700 NPN/PNP Silicon fTil Fiäl Räl rm [Tôl [~51 |~i~l LAJ L rv l COMPLEMENTARY MPQ6501, MPQ6502 For Specifications, See MPQ6001 Data i l l LÉJ Ú J LU LÌ! LÌ! LÍJ
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mpq670q/dmpq6501mpq6502mpq6001+7mpq6600a1mpq6100ampq67006700/ds010mmotorola diodesmotorola 6700 pnp
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ER900
Abstract: MPQ6600A1 MPQ6700
Contextual Info: MPQ6501, MPQ6502 MPQ6600A1 Fo r Specifications, See MPQG001 Data MPQ6700* F o r Specifications. See M P Q 6 I0 0 A Data M AXIMUM RATINGS Rating S ym bol Value Collector-Em itter Voltage VCEO 40 Collector-Base Voltage VCBO 40 Vdc Em itter-Base Voltage Vebo
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mpq6501mpq6502mpq6600a1mpqg001+3mpq6700o-116er900
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Motorola 6502
Contextual Info: M A X I M U M R A T IN G S R ating MPQ6001 MPQ6501 MPQ6002* MPQ6502* Sym bol V a lu e U n it C o lle c to r -E m itte r V o lta g e V CEO 30 Vdc C o lle c to r-B a s e V o lta g e VCBO 60 V dc E m itte r-B a s e V o lta g e v EBO 5.0 Vdc 'c 500 m Adc C o lle c to r C u rre n t — C o n tin u o u s
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mpq6001mpq6002mpq6501mpq6502+1motorola 6502
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MPQ6700
Abstract: MPQ6600A1 MPQ6700 equivalent MPQ6001 MPQ6100A MPQ6501 MPQ6502
Contextual Info: MOTOROLA Order this document by MPQ6700/D SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor NPN/PNP Silicon MPQ6700 14 13 12 11 10 9 8 1 2 3 4 5 MPQ6501, MPQ6502 For Specifications, See MPQ6001 Data COMPLEMENTARY 6 7 MPQ6600A1 TYPE B For Specifications,
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mpq6700/dmpq6700mpq6501mpq6502+4mpq6001mpq6600a1mpq6100ampq6700 equivalent
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MPQ6700
Contextual Info: MPQ6501, MPQ6502 For Specifications, See MPQ6001 Data MPQ6600A1 For Specifications, See MPQ6100A Data MPQ6700* MAXIM UM RATINGS Rating Symbol Value Unit C o lle ctor-E m itter V o ltage v CEO 40 Vdc Collector-Base Voltage v CBO 40 Vdc Em itter-Base Voltage
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mpq6501mpq6502mpq6001mpq6600a1+3mpq6100ampq6700o-116
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L298D
Abstract: SAS251S4 ugn3013 SAS251 UCN4815A ULN3782M UDN2981LW uc3646 mc1417p CA1725E
Contextual Info: AMS-105 GENERAL INFORMATION SEMICONDUCTOR CROSS REFERENCE in Alpha-Numerical Order The suggested Allegro replacement devices are based on similarity as shown in currently published data. Exact replacement in all applications is not guaranteed and the user should compare the specifications of the competitive and recommended Allegro replacement. Special caution must be exercised in attempting to do a reverse cross. In some instances, the competitive device is obsolete; in
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ams-105lx8020cs2930cs298+10l298dsas251s4ugn3013sas251ucn4815auln3782mudn2981lwuc3646mc1417pca1725e
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050lmmbd914lbas16lbal99l+16mbav70lmbav99lmbav74bd2835xlmbd2836xlmmbd2837xlmmbf112lmfe521mmbf1122n3797 equivalentmfe131 equivalentmps5210bc557 sot238c448bc459cmfe211
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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transistor mosfet buv18am143206evkmmbf4856lm358 ic+668hc05sc24telephone line interface circuit bc517mc68b54xc68hc705p9mpx100apbuv18a
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BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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mdc5000t1mdc3105lt1bc337 bc547msb81t1+8mbt3904dw9t1marking 6aa sodmvam115automatic stabilizer circuit diagram range 210 to 250 voltszt751mbt3904dw9transistor 2n4125ct bc547 transistor pin diagram
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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msa1022-ct1emitte218amsc1621t1msc2404+15msd1819amv1620mv1624mv1636mv1640mv1642mpf3821bc237mps8093bcy72mmbf4856mad130pmps3866bcy71 alternativebss72
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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msc2295-bt1msc2295-ct1msc1621t1msc2404+14msd1819amv1620mv1624mv1636mv1640mv1642bf245bc237mps8093bf244msa1022msc2295mad1107pmps6568
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stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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bat54t1ju218amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642stencilbc237automatic heat detector project reportbc393 equivalent
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bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
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bs170226aads218amsc1621t1+10msc2404msd1819amv1620mv1624mv1636mv1640bs170 replacementbc237bc30transistor k 2056
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transistor bc237 bc337
Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage
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bc337bc338226aajunction218a+14msc1621t1msc2404msd1819amv1620transistor bc237 bc337replacement transistor bc337bc337 transistor equivalentbc338 equivalentbc337 to-92 genericbc337 circuit examplebc160-16bc337-25 "pin compatiblebc237bc338 replacement
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BC237
Abstract: MPS-A70 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage
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mpsa70226aacharacteri218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc237mps-a70 equivalent
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bc182 equivalent 2n2907
Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO
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bc182bc183bc184226aa+8junction218amsc1621t1msc2404bc182 equivalent 2n2907bc183 equivalentbc237bf245bc184 equivalent
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transistor MPS5771
Abstract: BC237 bfw4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit
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mmbd914lt1236abde218amsc1621t1+9msc2404msd1819amv1620mv1624mv1636mv1640transistor mps5771bc237bfw4
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P2d MARKING CODE
Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage
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pzta92t1261aaelectri218amsc1621t1+11msc2404msd1819amv1620mv1624mv1636mv1640p2d marking codeh2a transistorev 2816bc237transistor 2n2906
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WT transistor
Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc
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mmbf5484lt1236abc218amsc1621t1+15msc2404msd1819amv1620mv1624mv1636mv1640wt transistorbc237s11s2n441bf244b2n3799jfet bf245c4 sot-3232n3819 motorola
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2N5457 MOTOROLA
Abstract: 2N5457 equivalent BC237 transistor 2N5457
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc
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2n5457226aamsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv16422n5457 motorola2n5457 equivalentbc237transistor 2n5457
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BC237
Abstract: jedec package TO-226AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage
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bav99lt1236abj218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc237jedec package to-226aa
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2n1613 equivalent
Abstract: BC237 diode l 0607
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection
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sc-70/sot-323bav99wt1bav99lt1bav99rwt1+8msc1621t1msc2404msd1819amv1620mv16242n1613 equivalentbc237diode l 0607
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