2N23 Search Results

2N2389

Abstract: 2N2390 2N1711 Texas Instruments TI424
Contextual Info: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711

New England Semiconductor 2n2326a

Abstract: 2N2324A 2N2325 2N2322 2N2323 2N2323A 2N2324 2N2325A 2N2326 2N2326A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS TO-39/TO-5 PACKAGE DEVICE TYPE V drm VOLTS IT AMPS 80°C ¡D RM jiA Vgt VOLTS I gt HA mA Ih P gm WATTS TO-39 2N2322 25 1.6 10 0.35/0.8 200 2.0 0.1 fjl 2N2323 50 1.6 10 0.35/0.8 200 2.0 0.1 2N2323A 50

Contextual Info: DIGITRON SEMICONDUCTORS 2N2322 A -2N2328(A), 2N2329 SILICON CONTROLLED RECTIFIERS 1.6 AMP, PLANAR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Contextual Info: 2N2369A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2369AJ

2N2369AU

Contextual Info: 2N2369AUB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corpoation offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2369AUBJ

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

GE C106B1

Abstract: SCR C106Y1 ge c106d1 GE C106A1 ge C106Y1 SCR C103 GE C6U GE C6F 2N1931 c106B1 scr
Contextual Info: 232 232 232 232 o O PHASE CONTROL SCR’s LOW CURRENT .5 TO 4.0 AMPERES GE TYPE JE D EC C3 C103 C8 C6 C7 05 — C106 C107 2N877-81 — 2N1929-35 — 2N2344-48 2N2322-29 * 2NI1595-99 — — 30-200 30-200 25-300 25-200 2G-200 25-400 «M O » 15-400 15-400 o.so

tn-59

Abstract: 2222 NPN N 2222 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2906A 2N2907
Contextual Info: A/Ietal-Encased SPRAGUE Silicon SEPT T ran sistors HIGH-SPEED, MEDIUM CURRENT Type No. 2N2221 2N2221A 2N2222 2N2222A 2N2369 2N2906 2N2906A 2N2907 2N2907A 2N3115 2N3116 2N3135 2N3136 TN-54 TN-60 TN-62 TN-64 TQ-60 TQ-62 TQ-64 2N1469 2 N1469A 2N2218 2N2218A

SCR GE C5u

Abstract: SCR C103 specification of IC 2N1597 scr c108 7N870 GE scr C5u scr C203 2N2346 SCR C106Y1 2N2322-29
Contextual Info: C3 GE TYPE 2N 877-81"1 JEDEC C1 03 C203 - 2N5060-64 C5 30-200 30 400 2N2322-29 C6 07 - 2N 2344-48 25-400 25-200 - C106 C107 C108 - - - 50 400 15-600 1 *« K . 15-600 2N1595-99,A ELECTRICAL SPECIFICATIONS 30-200 VOLTAGE RANGE ? 5 400 FORWARD CONDUCTION •t r m s :i Max. RM S on-state current (A

MSCQ2

Abstract: t 317 transistor
Contextual Info: Microsemi W ntertown, M A 0Î172 PH: S17 S26-0404. F A X <617) #24-1235 2N2369A Features 40 Volts 200mAmps • Meats MIL-S-19500/317 • Iiolector-Sase Voftage 40V • (Jollector Current 200 mA • I-ast Switching 3 0 nS NPN BIPOLAR TRANSISTOR Maximum Ratings

2N2324A

Contextual Info: 2N2324A SILICON CONTROLLED RECTIFIER SCR DESCRIPTION: The 2N2324A is a Medium Current SCR for General Purpose Power Control Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS It 1-6 A (r m s ) @ Te - 85 0C It 1.O A (a v g ) @ Te - 85 °C o m < 1OO V Pd i s s

2N2326

Contextual Info: 2N2326 SILICON CONTROLLED RECTIFIER SCR DESCRIPTION: The 2N2326 is Designed for Medium Current General Purpose Power Control Applications. PACKAGE STYLE TO- 39 0.350- 0.370 (8.890- 9.398} 0.315- 0.335 MAXIMUM RATINGS It 1-6 A (r m s ) @ Te - 85 0C It 1.0 A

2N2323A

Abstract: 2n2326 2N2329
Contextual Info: Silicon Controlled Rectifier 2N2323, 2N2324, 2N2326, 2N2328 & 2N2329 2N2323S, 2N2324S, 2N2326S, 2N2328S & 2N2329S 2N2323A, 2N2324A, 2N2326A & 2N2328A, 2N2329A 2N2323AS, 2N2324AS, 2N2326AS, 2N2328AS, 2N2329AS Features • Available in JAN, JANTX and JANTXV

SCR C106Y1

Abstract: ge c106b1 1N177 2N1777A 2N2344 2N1932 G C106B1 2N1931 Z4XL18 2N2346
Contextual Info: 232 232 232 O 232 o P H A S E C O N T R O L SCR’ s LOW C U R R E N T .5 TO 4.0 A M P ER ES GE TYPE JE D EC C3 C103 C8 C6 C7 05 — C106 C107 2N877-81 — 2N1929-35 — 2N2344-48 2N2322-29 * 2NI1595-99 — — 30-200 30-200 25-300 25-200 2G-200 25-400 «M O »

2n2387

Contextual Info: TYPES 2N2387, 2N2388 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 4 6 0 2 6 , S E P T E M B E R 1 9 6 4 FOR EXTREMELY LOW-LEVEL, LOW-NOISE, HIGH-GAIN, AMPLIFIER APPLICATIONS Formerly Tf 420 and TI421 Guaranteed hFE at 10 /¿a, T*= — 55°C a n d + 25°

2N2386

Abstract: 2N2386A
Contextual Info: TYPES 2N2386, 2N2386A P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . DL-S 6 8 1 0 9 1 6 , S E P T E M B E R 196 8 AUDIO- TO HIGH-FREQUENCY SMALL-SIGNAL AMPLIFIERS 2N2386A offers the following improvements resulting from process innovation:

Contextual Info: 2N2369A w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2369A is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE

2N3555

Abstract: 2N4110 2n2344 2N1595 2n2009 2N6332 2N3005 2N4212 2N3003 2n6335
Contextual Info: SOLID SILICON CONTROLLED RECTIFIERS ON STATE CURRENT piv CASE — =£!!L 275mA 280mA 350mA 390mA 500mA 1.0A 1.3A TO-18 TO-18 TO-18 TO-18 TO-5 TO-18 TO-5 TO-5 TO-5 2N4212 2N2009 2N2322 2N2322A 2N2344 2N3027 2N3030 2N3555 2N4213 2N2010 2N1595 2N1595A 2N2028

MCR50S-2

Abstract: 2SF521 2N4152 cl07f
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 C203F 2SF521 BT149F BT149F 2N1930 NMB12S 2N409S 2N1595A S051E C205F <!N<!u1u MCR22-2 MCRSOS-2 CSF 2N2323A 2N2345 ID200 2N4213 2N2323 MCR190S-2 ~~~l~~ 25 30 2N6237 Tll0S-05 Tll07•05 DRA2A 2NS333

2n2349

Contextual Info: 2N2349 Si NPN Lo-Pwr BJT 1.49 Transistors Bipolar Silicon NPN Low. 1 of 2 Home Part Number: 2N2349 Online Store 2N2349 Diodes Si NPN Lo -Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

MRF9331

Abstract: 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 ~~~~~~1 15 20 2N2967 2N3010 2N2475 2N709 MM1748A 2N3832 2N709A 2N2784 ~~~~;~ 25 30 2N2257 2N3681 2SC3011 2SC2876 2SC3301 MRF9331

Contextual Info: NPN SWITCHING TRANSISTOR 2N2369ACSM • Silicon Planer Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2n2369

Contextual Info: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred Device 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO