2N170 Search Results

transistor c 2060

Abstract: TO-59 Package 2N2877 752 transistor 2n2892 TRANSISTOR 751 TO111 package 2N1701 2N2893 3090L
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-8 PACKAGE NPN TO-8 J1L hp£@ Ic-/ VCE min/max @ A/V DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS 2N1483A 40 3 20-60@.75/4 2N1484A 55 3 2N1485A 40 2N1486A 2N1701 T f T VcE(s«t) @ (V @ A/A) p * •D fr WATTS

2N2992

Abstract: 23028 2N3016 JANTX2N3440
Contextual Info: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S

2N2856

Abstract: a/TO111
Contextual Info: A P I ELECTRONICS INC ' 00 43 59 2 A P I E L E C T R O N I C S ' INC 5b Ï Ë J 00435^5 0D0DE51 fl 26C 00221 ~T ~33~Dt COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No 2N1616 2N1617 2N1618 2N1702 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-2 2N2849-3

2N1701

Abstract: 2N1485A npn transistor 2N1486A 2N1485 TRANSISTOR 751 2N1483A 2N1484A 2N170 to59
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-8 Ic/ VCE min/max @ AAO PACKAGE DEVICE TYPE (sus VOLTS Ic (max) AMPS NPN TO-8 2N1483A 40 3 20-60@.75/4 2N1484A 55 3 20-60@.75/4 JpL TM 2N1485A 40 2N1486A 2N1701 ^C E O ^FE ^CE(sat) p * WATTS fx (MHz)

AP1131

Abstract: 2N1479 2N1480 2N1481 2N1486 2N1700 2N2102 AP1125 AP1127 AP1128
Contextual Info: 0043592 A P I ELECTRONICS INC _ _ _ P A R A M E T E R T A B L E S A P I EL ECTRONICS INC 2b 26C 00217 D lT | 0 0 4 3 5 ^ D 7": 3> J - o / □□□0217 L, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No 2N1479 2N1480 2N1486 2N1700

2n2224

Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272

40411 transistor

Abstract: transistor 40411 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3771 2N3772
Contextual Info: un ic / m PNP •Ty p « * “7 ComplaHMnt V c e x tu t ic Volts) M ax (Mln-Max @ A/¥) 2N1487 2N1488 2N1489 2N1490 2N1702 40 55 40 55 40 6.0 6.0 6.0 6.0 5.0 15-45 @ 1.5/4 15-4501.5/4 25-7501.5/4 25-75 @ 1.5/4 15-60 @ .8/4 2N3442 2N4347 2N6262 140 120

KT704

Abstract: MJ8501 2S0200 BU205 HITACHI 2sc935 MJE132 KT704A MJE1320 TIPL770 PT8851A
Contextual Info: POWER SILICON NPN Item Number Part Number >= I C 20 PT8851A MRF262 S01014•6 2N6081 MRF433 NA41UX NA41UG NA41UH ~~:~~r 25 30 2N6198 2N6198 2N6198 2S01077 2N2339 2N1701 2N6391 2N6391 ~~~J85 35 40 BLY15 BOY16 BOY16 MM3006 MM3007 2N4272 2N4273 2N6477 ~~~~~5

2N2632

Contextual Info: t le = 5.0 AMPS 4-6 DEVICE TYPE PACKAGE 2N1208 2NÎ209 2N1212 2N1616 2N1617 TO-61 TO-61 TO-61 TO-61 TO-61 2N1618 2N1702 2N1724 2N1724A 2N1725 TO-61 TO-3 TO-61 TO-61 TO-61 2N2632 2N2633 2N2634 2N2657 2N2658 hFE@ VOLTS BVeb0 VOLTS P D@ 100°C WATTS 60 45 60

2n2019

Abstract: 2n2018 2N545
Contextual Info: Ic = t .0 AMPS bvceo PACKAGE 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019 2N2150 2N2151 2N2987 2N2988 2N2989 2N2990 2N3262 2N3739 2N4000 2N4001

2n1701

Abstract: 2N2035
Contextual Info: POWER TRANSISTORS TYPE NO TO-5 PT MAXIMUM RATINGS @ 25°C •ü'ÆÜl f:fKT51 l:WT51 Ic A V V V Watts 2N1116 .6 60 60 2N1117 60 60 2N1479 .6 5.0 60 40 2N1480 5.0 100 55 2N1481 5.0 60 2N1482 5.0 2N1700 6 I Hfe , A V V ce V VB£ V Ic MIN MAX Sat Voltages <iD

2N3236

Abstract: 2N3864 2N1070 2N1488 2N2305 2N3667 2N3771 2N4347 2N5559
Contextual Info: industrial power transistors 136 -~-~~~-~~-~~~~-~ SILICON NPN TRANSISTORS 15 Amp TYPE NUM8ER CASE SIZE 2N1069 2N1070 2N,1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3234 2N3235 2N3236 2N3442 2N3863 2N3864 2N4347 2N4395 2N4396 2N5559

ESM2369

Abstract: 2N3605A MPS4275 2n3564 2N4418 2SC321H tis49 2N3606 BSY19 BSX88
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272

Contextual Info: NEU ENGLAND SEMICONDUCTOR SIE I • b S b m i B 000005S 370 * N E S 2-50 A V ceo sus = 3 5 -5 0 0 V fr =0 .2 -5 0 MHz NPN TO-3 lc (M A X ) — Case 803 Case 804 Type No. 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3445 2N3446 2N3447 2N3448 2N3713 2N3714 2N3715

2N1069

Abstract: 2N3233 2N3236 2N3226 2N3442 2N1070 2N3232 2N3863 2n4395
Contextual Info: industrial power transistors 136 -~-~~~-~~-~~~~-~ SILICON NPN TRANSISTORS 15 Amp TYPE NUM8ER CASE SIZE 2N1069 2N1070 2N,1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3234 2N3235 2N3236 2N3442 2N3863 2N3864 2N4347 2N4395 2N4396 2N5559

Contextual Info: Microsemi 2N5468 2N5469 2N2811 2N2812 2N2813 2N 2814 2N6495 2N4231 2N4232A 2N4233 2N4233A 2N1487 2N1489 2N1702 2N1488 2N1490 2N6043 2N 6044 2N6045 2N6486 2N6487 2N6488 2N5731 2N5732 2N1209 2N1212 NPN ; 2N5970 2N4301 2N5264 2N7142 2N7143 2N5067 2N5068 2N5069

2n170

Contextual Info: 2N1700 Silicon N-P-N power switching transistor. 60V 5W. 2.95 Transistors Unsorted Tr. Page 1 of 1 Enter Your Part # Home Part Number: 2N1700 Online Store 2N1700 Diodes Silico n N -P -N pow e r s w itc hing t rans is tor . 60V 5W . Transistors Integrated Circuits

2N1701

Contextual Info: 2N1701 Si NPN Power BJT 7.90 Transistors Bipolar Silicon NPN Power Transistors Am. Page 1 of 1 Enter Your Part # Home Part Number: 2N1701 Online Store 2N1701 Diodes Si N P N Po we r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

2N5866

Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
Contextual Info: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75

Contextual Info: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5

Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10