2N 930 Search Results

2N739A

Contextual Info: small signal transistors 71 SILICON NPN PLANAR RATED BREAKDOWN VOLTAGES TYPE NUMBERS • 2N 929 2N 930 2N 756 2N 757 2N 758 2N 759 2N 760 2N 929A 2N 930A 2N 930B 2N 2586 2N 756A 2N 757A 2N 2483 2N 2484 2N 2484A 2N 3117 2N 758A 2N 758B 2N 759A 2N 759B 2N 760A

2N2210

Abstract: 2N2223 200H 250M T018 T072 2N1724A 706A
Contextual Info: MfiE D m fll331fi7 □□□□433 31T • SMLB SEMELABtSEMELAB BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N 696 2N 697 2N 706 2N 706A 2N 718A 2N 720A 2N 722 2N 869 2N 869A 2N 914 2N 915 2N 916 2N 918 2N 930 2N 930A 2N1132 2N1483A 2N1484A

2n3901 equivalent

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390

LA 4138

Abstract: 2n2605
Contextual Info: TYPES 2N2604, 2N2605 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 6 , M A R C H 1973 FOR LO W -LEVEL, LOW -NOISE, H IG H -G A IN A M P L IF IE R A PPLICATIO N S • For Complementary Use with 2N 929, 2N 930, 2N 2483, 2N 2484, and 2N 2586

2n5088 transistor

Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0

2n2222a SOT23

Abstract: 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1132 2N1483 2N1484
Contextual Info: L -S tl'-O f " T - 3 3 - o7 iS E M E L A B MANUFACTURING • 37E SEMELAB LTD 6133167 □ □ □0CH 7 Package v CEO "2N 708'\ CV-0 2N 697 CV-0 2N 930 4 CV-0 2N1132 CV-0 2N1483/ CV-0 BS-0 NPN NPN NPN PNP NPN T018 T039 T018 T039 T08 15 40 45 35 40 0.1 0.5 0.1

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

2N 930

Contextual Info: 2N 930 SILICON PLANAR NPN LOW-LEVEL, LOW-NOISE AMPLIFIER The 2N 9 3 0 is a silic o n planar e p ita x ia l NPN tra n sisto r in Jedec T O -1 8 m etal case, designed fo r use in high p e rfo rm a n ce , lo w -le v e l, lo w -n o is e a m p lifie r app lica tio n s.

2n930

Contextual Info: 2N 930 N-P-N SILICON PLANAR TRANSISTOR N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These devices are primarily intended for use in high performance, low-level, low-noise amplifier appli­ cations both for direct current and for frequencies of up to 100 MHz.

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

Contextual Info: DC/DC Converter TES 2N Series 2 Watt Features Ultracompact SMD-Package Wide 2:1 Input Range I/O-Isolation 1500 VDC Input Filter meets EN55022, Class A Low Ripple and Noise Shortcircuit Protection Operating Temperature Range -40°C to +75°C 3 Year Product Warranty

706a

Abstract: 2n1890 N1711 250M T018 T072 2N1724A 699 NPN hirel
Contextual Info: r SEMELAB LT]> 37E J> 6133167 □□□□□12 =] • SULB ■c 2C 2C “~2C S-2C * 2N 415 425 444 746 696 HI-REL HI-REL HI-REL HI-REL SCREEN NPN NPN NPN NPN NPN * * T077 T077 T077 T077 T039 35 75 35 50 60 0.03 0.1 0.05 0.1 0.2 lOOmin 35min 40min 35min 40min

2N929

Abstract: 2N930 2N 930 h21e 929-2N
Contextual Info: 2N 929 *2 N 930 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TR A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X Preferred device D isp o sitif recommandé LF small signal amplification low noise A m p lific a tio n B F p e tits sig naux /fa ib le b r u it)

D 5038 Transistor Horizontal

Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching

2n3055

Abstract: bd 3055
Contextual Info: POWER CASES TRANSISTORS ; _ P - 2 2 _ TQ- ?_ TQ- 220 T Y P E NPN PNP SDT 9302 SDT 9303 SDT 9304 SDT 9305 SDT 9306 SDT 9307 SDT 9308 SDT 9309 $ TIP 29 $ TIP 30 $ TIP 29A $ TIP 30A $ TIP 29B $ TIP 30B

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

BCM 4359

Abstract: transistor 4287 AB transistor 3901
Contextual Info: 6091788 MICRO ELECTRONICS CORJP_ ña 82D 006^8 DEI bCm 7flfl D 7^* D 0 0 Gb 4 fl □ "7 J " TYPE V C E SA T FE C ASE Pd (mW) 'c (mA) V CEO (V) min max 'c (mA) max (V) ‘c (mA) fT min (MHz) Cob N.F. max max (pF) (dB) 3694 4249 4250 5138 N P P P T O -92A

transistor 2n 929

Abstract: transistor BF 697
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA • S3033TM 00Û0010 T ■ PROFESSIONAL GRADE APPLICATIONS - Device VCEO VCBO VEBO Volts Volts Volts min min min hFE at bias IC mA VCE Volts min/max ICM mA max PTA mW max PTC W typ ICBO VCE sat fT Volts MHz PA

2N784

Abstract: 2N656 2N697 2N699 2N703 2N706 2N760 2N760A 2N783 2N834
Contextual Info: CRIMSON SEMICONDUCTOR INC T=| DE | B 5 m O T b □□□□2^2 a 2514096 CRIMSON SEMICONDUCTOR INC 99D 00292 D 7“— 3<sr- 6 ' Df VICE TYPl PACKAGE BVCEO BVCBO BVEBO ICBO @ VCB I V i M IN IVI M IN V I M IN (m A I MAX ltf| HFf @ V C & IC M lN FT COB M AX

EQUIVALENT TRANSISTOR bc109c

Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published