2N 698 Search Results

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

BD699

Abstract: BD697 BD609 BD698 BD595 MJE34 BD601 BD699A BD695 BD597
Contextual Info: / lC = 8 0 A BD595 BD695 B D 695A BD597 BD697 BD 697A 2N 6043 BD599 BD699 BD 699A 2N 6045 BD601 BD701 2N 6045 11 -8 < < 2 .0 H fe @ 'c Am p V CE (sat @ 'C V o lts Am p fT M Hz PD Watts Case J A le = 6.0 MJE41 M JE41A MJE41B MJE41C V PNP utw ^O NPN MJE42

2N698

Abstract: transistor BF 698 2n 698 H22B
Contextual Info: 2N 698 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TR A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L - LF amplification A m plification B F - Switching Commutation VCEO 60 V I121 E 150 mA 2 0 -6 0 h 40 MHz Maximum power dissipation Casa TO-39

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-116 PACKAGE T O -116 14 PIN C E R A M IC D IP yp i* T O -116 w 11 f VcEO sus VOLTS Ic (m ax) AM PS hfE @ V ^ ce m in/m ax @ m A /V VcE(sat) @ Ic^B V @ m A /inA C <£P P (M H z) 2N 6987 60 .6 100/300@ 150/10

petercem

Abstract: transtronic CONTROL10 M-0320 ABB transtronic
Contextual Info: ABB Control 10, rue Ampère, Z.l. - B.P. 114 69685 Chassieu cedex France T \/n û Tél. 72.22.17.22 - Fax. 78.90.27.58 ' Y P “ TRANSTRONIC Typ TC 030 X E FHN2N X E FHP 2N PM 2587 - X - 03/83 1. Electronic measuring transformer for d.c., a.c., pulsating a.s.o. .currents or voltages with a high iso­

706a

Abstract: 2n1890 N1711 250M T018 T072 2N1724A 699 NPN hirel
Contextual Info: r SEMELAB LT]> 37E J> 6133167 □□□□□12 =] • SULB ■c 2C 2C “~2C S-2C * 2N 415 425 444 746 696 HI-REL HI-REL HI-REL HI-REL SCREEN NPN NPN NPN NPN NPN * * T077 T077 T077 T077 T039 35 75 35 50 60 0.03 0.1 0.05 0.1 0.2 lOOmin 35min 40min 35min 40min

D 5038 Transistor Horizontal

Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching

P2N60e

Abstract: 2N60E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet M T P 2N 60E TM O S E -F E T ™ P o w er Field E ffe c t Transistor M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon G te T h is h ig h v o lta g e M O S F E T u s e s an a d v a n c e d te rm in a tio n

TIC 2260

Abstract: si5464 RF Transistor 2n5038
Contextual Info: 2N5038, 2N5039, 2N6496 File N um ber 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors D evices for S w itchin g and A m p lifie r C ircuits in Industrial and C o m m ercial A p p licatio n s Features: • ■ ■ ■ M axim um operating area curves for dc and pulse operation

U3540

Abstract: 2n5039
Contextual Info: 2N5038, 2N5039, 2N6496 HARRIS SEMICOND SECTOR File Number SbE ]> • 698 43G2271 GD4044fl STI H H A S High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors lz z 32'-‘/3 Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications

RCA-2N5038

Abstract: 2N5038 equivalent 2N6496 2N6496 RCA 2N5039-1 AALI 2N5038 2N5039 2n5038 sol
Contextual Info: 3875081 G E SOLID S T A T E ^ ^ | 3ö7SDai 0017117 3 ^r . S 3 ^ /3 High-Speed Power 2N5038, 2N5039, 2N6496 File Number 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

TRANSISTOR BC 313

Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

aa2n

Abstract: 2N2195 2N2243 2N1420 3053-1000 2N2192 2N2219 2N696 A-80080 2N698
Contextual Info: general purpose, amplification, switching - metal case commutation, am plification, usage général boît \e r m éta I th o m so n -csf T ype C h a r a c t e r is tic s a t 25 °C M a x im u m ra tin g s NPN PNP P to t h21E v CEO VCER* / >C V C E sat !

tt 2194

Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
Contextual Info: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

2n5038

Abstract: FO152
Contextual Info: 3875081 G E SOLID STATE ^ ^ 1 3875081 0017117 3 I"> T - i W Ï High-Speed Power 2N5038, 2N5039, 2N6496 File Number 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

2N2243

Abstract: H21E 2N3439 pnp case to-39
Contextual Info: CB 7 (CB 6) S ilicon N P N transistors, general purpose T g m b -2 5 T ra n s is to rs N P N s ilic iu m , usage g én é ra ! v CEO (V) Case h 2 iE fT (MHz} *s (ns) •c v CEsat (V) <mA) max 60 150 1,5 150/15 40 61 120 150 1,5 150/15 50 61 20 60 150 5 150/15

npn 60V 600mw

Abstract: 2195A 2243A 150PF 2n2539 2N699 MA8003
Contextual Info: General Purpo/e Tran/i/tor/ npn TO- 18 10-106 it r E lectrical C haracteristics @ T & = 25°C M axim u m Ratings TYPE NO . •c Pd NPN @Ta = bv Cbo L V CEO b v EBo h FE @ V q e @ >C max. m in./m ax. 25°C V C E sat @ l C / l B C ob CASE fT @ l C max. min.

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered