2SK1961 Search Results

0124

Abstract: ako 514 400 2SK1961 J100 AO 4502
Contextual Info: O rd e rin g n u m b e r. EN 45 Ó 2 _ 2SK1961 No.4502 N -C hannel Junction Silicon FET H igh-Frequency Low-Noise Amp A pplications A p p lic a tio n s • High-frequency low-noise amp applications. F e a tu re s •Adoption of FBET process • Large I y * I

Contextual Info: Ordering number: EN 4502 2SK1961 i N-Channel Junction Silicon FET SAßiYO i High-Frequency Low-Noise Amp Applications A pp licatio n s • High-frequency low-noise amp applications. F e a tu re s • Adoption of FBET process •Large I yfs I • Small Ciss

2SK1961

Contextual Info: Ordering number:ENN4502 N-Channel Junction Silicon FET 2SK1961 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • High-frequency low-noise amplifier applications. unit:mm 2019B Features [2SK1961] 5.0 4.0 4.0 5.0 · Adoption of FBET process.

Contextual Info: O rd e rin g n u m b er: E N 4 5 0 2 _ 2SK1961 No.4502 J N-Channel J unction Silicon FET S A \Y O High-Frequency Low-Noise Amp Applications A pplications • High-frequency low-noise amp applications. Features • Adoption of FBET process • Large I Yfg I

2SK1961

Abstract: ITR02308 ITR02309 ITR02310 ITR02311 ITR02312 ITR02313 grg 250
Contextual Info: 注文コード No. N 4 5 0 2 2SK1961 No. 三洋半導体ニューズ 2SK1961 用途 N4502 70999 N チャネル接合形シリコン電界効果トランジスタ 高周波低雑音増幅用 ・高周波低雑音増幅用。 ・アマチュア無線機用。

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

2sk77

Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

2SK968

Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
Contextual Info: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller

SK968

Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
Contextual Info: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications

VHF Transceiver IC

Abstract: VHF AM Transceiver IC 2SK937 2SC4856 mosfet vhf power amplifier 2SK715 2SK315 2Sc2314 2SC4910 2SC2839
Contextual Info: Continued from previous page Absolute maximum ratings I Device Package Applications type ! Vcao VcEO V I (V) VEBO (V) ta Electrical characteristics (Ta = 25 °C) I ! (mA) | ! Ic b o max @ V cb T, Pc (mW) (4 ) ¡ le s o m ax ! o»A) Vc b TO hFE @ VcE • IC