2019B Search Results

2SK1961

Contextual Info: Ordering number:ENN4502 N-Channel Junction Silicon FET 2SK1961 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • High-frequency low-noise amplifier applications. unit:mm 2019B Features [2SK1961] 5.0 4.0 4.0 5.0 · Adoption of FBET process.

2SK937

Abstract: Y352 2SK93-7
Contextual Info: Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • Adoption of FBET process. · Large yfs. · Small Ciss. unit:mm 2019B [2SK937] 5.0 4.0 5.0 4.0 0.6 2.0 0.45

2SK222

Contextual Info: Ordering number:EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features Package Dimensions • Ultralow noise figure. · Large yfs. · Low gate leakage current. unit:mm 2019B [2SK222] 5.0 4.0 5.0 4.0 0.6 2.0

2SK223

Contextual Info: Ordering number:EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features Package Dimensions unit:mm 2019B [2SK223] 5.0 4.0 4.0 5.0 • Ultrahigh withstand voltage VGDS≥–80V . · Due to low gate leakage currents even at high

DT60-2019B

Abstract: PEB22811 SPLITTER VDSL PEB22810 PEB22822 VDSL splitter solution
Contextual Info: A.fVELT/1 INTEGRATED CO VDSL FILTER/HYBRID SOLUTION DT60-2019B »DELTAXXXX DT60-2019B XXXX : DATA CODE DOT ON PINI De vice p in o u t T O P VIEW LIN E Rx FEATURE T T 8 7 6 5 1 2 PIN ALLOCATION 1 AGND 2 NC 3 4 PCB LAYO U T • De si gn t o m e e t U L 1 9 5 0

2SK223

Contextual Info: Ordering number:EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features Package Dimensions unit:mm 2019B [2SK223] 5.0 4.0 4.0 5.0 • Ultrahigh withstand voltage VGDS≥–80V . · Due to low gate leakage currents even at high

transformers electronics

Abstract: DT32-2019BT DT32-2020BT DT32-2021AT DT32-2062AT 2062a
Contextual Info: Telecommunication ADSL Transfor mer Transformers DT32-2019BT DT32-2020BT DT32-2021AT DT32-2062AT DT32-20XXXX XXXX : DATE CODE WHITE DOT ON PIN1 DELTAXXXX 10 1 A PRI B 10 9 7 6 6 7 6 9 SEC 7 1 3 2 8 4 SEC PRI N4 N2 7 N1 N3 N3 3 4 8 9 2 (3) 5 SEC N4 N2 7 4

2SC4133

Abstract: 2SA1591 C4133
Contextual Info: I Ordering num ber: E N 2 5 1 5 2SA1591/2SC4133 PNP/ NPN EpitaxialPlanarSiliconTransistors S A X Y O i Switching Applications _ with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance (Ri=4.7kO,R2=47kO)

IC4121

Abstract: 2SA159 2SA1590 2SC4121 HP 2061 IC-412
Contextual Info: Ordering number: EN 2 5 1 4 f. 2SA1590/2SC4121 PNP/ NPN EpitaxialPlanar SiliconTransistors S A A ÍY O i Switching Applications _ with Bias Resistance Applications • Switching circuit, inverter circuit, interface circuit, driver circuit Features

2SA1420

Abstract: SC36 small signal transistor
Contextual Info: Ordering number: EN 1682A 2SA1420/2SC3653 PNP/ NPN Epitaxial P lanar Silicon Transistors SAßtYO i Switching Applications _ with Bias Resistor Use .Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1=47kfl ,R2=47kO ).

Contextual Info: Ordering number: EN 1685A 2SA1423/2SC3656 i SAßiYO PNP/ NPN Epitaxial Planar SiliconTransistors i Switching Applications with Bias Resistor Use . Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1 =10ki2 ,R2=10kfl ).

Contextual Info: Ordering num ber.EN 2 1 0 5 A | 2SA1511/2S03901 J PNP/ N P N Epitaxial Planar SiliconTransistors SA \ YO Switching Applications with Bias Resistance Applications . Switching circuits, inverter circuits, interface circuits, driver circuits Features . On-chip bias resistance: Rl=4.7k£l

2SA1572

Contextual Info: Ordering number: EN 2 4 5 8 2SA1572/2SC4067 PNP/ NPN Epitaxial Planar Silicon Transistors I SAKYOi Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance: R1=0, R2=47kii

2sc3331 transistor

Abstract: 2SA1318 2SC3331 PJ 431
Contextual Info: Ordering number: EN 16 Q 0A N 0.I6O O A ¡I 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYOi AF Amp Applications Use Capable of being used in the low frequency to high frequency range. Features . Large current capacity and wide ASO. : 2SA1318

2SK223

Abstract: VPS-80
Contextual Info: Ordering number: EN 659K SANYO N0.659K i _ 2SK223 N-Channel Silicon Junction FET High Voltage Driver Applications Features • Ultrahigh withstand voltage Vqds — _ 80V . • Due to low gate leakage currents even at high voltages, the 2SK223 is suitable for a wide range of

EN3511

Abstract: TRANSISTOR MARKING 1d7 A1785 C4645 LA 4645 2SA1785 2SC4645 d015t
Contextual Info: Ordering number: EN 3511A TW O Tb DGlSbES 2SA1785/2SC4645 N 0.3511A I 270 2SA1785:PN P E p itax ial P la n a r Silicon T ran sisto r 2SC4645:NPN T riple Diffused P la n a r Silicon T ran sisto r SAW O i High Voltage Driver Applications F e a tu r e s • L arge cu rre n t capacity Ip = 1A

2SB560

Abstract: 2sd438 transistor 2SD438 2sb560 transistor transistor 2sd438 326H transistor 2sb560 2sd438 2sb560 2SD438 SANYO
Contextual Info: Ordering number: EN 326H 2SB560/2SD438 N 0.326H PNP/NPN Epitaxial Planar Silicon Transistors SANYO i Low-Frequency Power Amp Applications The 2SB560/2SD438 are epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable

transistor c2362

Abstract: 2SC2362 A1016 2SA2362 2SA1016 C2362 2SA1016K 2sc2362 TRANSISTOR 2SA23 2SC2362K
Contextual Info: Ordering number: EN 572D 2SA1016.1016K/2SC2362,2362K k J PNP/ NPN Epitaxial Planar Silicon Transistors SAKYO High-Voltage Low-Noise Amp _ Applications : 2SA101 6 ,1 0 16K Absolute Maximum Ratings at t . =25°C 2SA1016,2SC2362 2SA1016K,2SC2362K u n i t

10l82

Abstract: 2SA1784 2SC4644 TO-92 VCEO400V 2SAR 2tj transistor
Contextual Info: Ordering number : EN 3520 2SA1784/2SC4644 i PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor S A t Y O i High Voltage Driver Applications F e a tu re s • Adoption of MBIT process - High breakdown voltage Vceo —400V

VLN 2003a

Abstract: 2SC4454 T500
Contextual Info: Ordering number: EN 2813 2SC4454 i SAiYO N PN E p itax ial P la n a r Silicon T ran sisto r i High-Speed Switching Applications F e a tu r e s • F a st sw itching speed • Low collector sa tu ra tio n voltage • H igh gain-bandw idth product • Sm all collector capacity

2SK772

Abstract: 2392A
Contextual Info: Ordering number: EN 2392A 2SK 772 N 0 .2 39 2A N-Channel Junction Silicon FET SA \YO i AF Amp Applications / Applications Variable resistors, analog switches, AF amp, constant-current circuit Features Adoption of FBET process Absolute Maximum Ratings at Ta=25°C

2SK772

Abstract: 140je N0239
Contextual Info: Ordering number: EN 2392A N0.2392A 2SK 772 N-Channel Junction Silicon FET SA \YO i AF Amp Applications Applications Variable resistors, analog switches, AF amp, constant-current circuit Features Adoption of FBET process Absolute Maximum Ratings at Ta=25°C

2SC366

Abstract: 2SA1423 SC36
Contextual Info: Ordering number: EN 1685A 2SA1423/2SC3656 i SAßiYO PNP/ NPN Epitaxial Planar SiliconTransistors i Switching Applications with Bias Resistor Use . Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1 =10ki2 ,R2=10kfl ).

2SC1860

Abstract: 2SC3860 2SA1497 A1497 H160 3860S U4 Package
Contextual Info: I Ordering number: EN 2 1 0 7 A 2SA1497/2SC3860 NO.2107A PNP/ NPN Epitaxial Planar Silicon Transistors SAXYO Switching Applications _ with Bias Resistance Applications . Switching circuits, inverter circuits, interface circuits, driver circuits