2SD1805 Search Results

Contextual Info: 2SD1805 Ordering number : EN2115C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1805 High-Current Switching Applications Applications • Strobes, voltage regulators, relay drivers, lamp drivers Features • • Low saturation voltage

ic 4078

Contextual Info: Ordering n u m b e r:EN 4078 . FX502 No.4878 N PN E pitaxial P lanar Silicon T ransistor SMIYO i High-Current Switching Applications Features • Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. • The FX502 houses two chips, each being equivalent to the 2SD1805, in one package.

2sd1805a

Abstract: SD1805 2SD1805
Contextual Info: O rd e rin g n um b e r : EN 2 1 1 5 B J 2SD1805 N0.2115B SA%YO N PN E p itax ial P la n a r Silicon T ran sisto r H igh-C urrent Sw itching A pplications A p p lica tio n s . Strobes, voltage regulators, relay d rivers, lam p drivers F ea tu res • Low sa tu ra tio n voltage

2sd1805a

Abstract: 2SD1805
Contextual Info: Ordering number:EN2115B NPN Epitaxial Planar Silicon Transistor 2SD1805 High-Current Switching Applications Applications • Strobes, voltage regulators, relay drivers, lamp drivers. Package Dimensions unit:mm 2045B [2SD1805] Features · Low saturation voltage.

2sd1805a

Abstract: 2SD1805
Contextual Info: SA NY O S E M I C O N D U C T O R CORP 7 T T 7 0 7 ta G 0 0 7 5 4 ci T 2SE D T-33-0 2SD1805 7 # * NPN Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications ansa Applications . Strobes, voltage regulators, relay drivers, lamp drivers

2SD1805

Abstract: 2115A D195 2044B ITR10038 ITR10035 ITR10036 ITR10037 21153 ITR10044
Contextual Info: 注文コード No. N 2 1 1 5 B 2SD1805 No. N 2 1 1 5 B 42000 * 半導体ニューズ No.2115 ’ 87-88 データブック個別半導体素子トランジスタ編 No.2115A とさしかえてください。 2SD1805 NPN エピタキシァルプレーナ形シリコントランジスタ

Contextual Info: Ordering number : EN2115C 2SD1805 Bipolar Transistor http://onsemi.com 20V, 5A, Low VCE sat , NPN Single TP/TP-FA Applications • Strobes, voltage regulators, relay drivers, lamp drivers Features • • Low saturation voltage Large current capacity Fast switching time

1414P

Abstract: 2SD1805 078n ikr 251 4500M
Contextual Info: 2SD1805 SPICE PARAMETER NPN SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 638.7f A CJE 306.5p F BF 290.0 MJE 0.36 NF 1.008 VJE 0.74 V VAF 32.64 V CJC 141.4p F IKF 3.0 A MJC 0.46 ISE 307.5f A VJC 0.82 NE 1.549 XCJC

2sd1805a

Abstract: 2044B 2SD1805
Contextual Info: Ordering number:EN2115B NPN Epitaxial Planar Silicon Transistor 2SD1805 High-Current Switching Applications Applications • Strobes, voltage regulators, relay drivers, lamp drivers. Package Dimensions unit:mm 2045B [2SD1805] Features · Low saturation voltage.

Contextual Info: 2SD1805 Ordering number : EN2115C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1805 High-Current Switching Applications Applications • Strobes, voltage regulators, relay drivers, lamp drivers Features • • Low saturation voltage

2SB1205

Abstract: FX851
Contextual Info: SANYO New Products Of New Package 5/6-pi n XP Seri es :FX type 2 SANYO new 5 /6 -p in XP packages a re in te rm ed ia te sized d e vices between SANYO PCP and TP packages and have high power cap a b ility . This packages lin e in clu d e s complex types of la rg e -c u rre n t sw itchin g t r a n s i s to r s , of a low s a tu ra tio n -v o lta g e t r a n s i s to r ( f a s t

2SD1300

Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
Contextual Info: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

2SB1205

Abstract: 2SB1143 2sc4675
Contextual Info: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.

2044B

Abstract: 2SD1805 2115b 2sd1805a
Contextual Info: O rdering num ber: EN 2 1 15B 2 S D 180 5 Na.2115B . NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Strobes, voltage regulators, relay drivers, lamp drivers Features • Low saturation voltage • Fast switching time

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —