2SD1295 Search Results

2SB0968

Abstract: 2SD1295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm 0.75±0.1 2.3±0.1 (5.3) (4.35) (3.0) 4.6±0.1 • Absolute Maximum Ratings TC = 25°C Unit 50 V Collector-emitter voltage (Base open)

2SB968

Abstract: 2SD1295 ic 731
Contextual Info: Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 For low-frequency output amplification Complementary to 2SD1295 2.3±0.1 1 2 1:Base 2:Collector 3:Emitter U Type Package 3 Ta=25˚C Parameter Symbol Ratings Unit

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm • Features 0.75±0.1 2.3±0.1 4.6±0.1 Symbol Rating Unit VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open)

KA 3264

Abstract: 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371
Contextual Info: - 158 - s « Type No. tt £ Manuf. 2SC 3259 * S tS t c 2SC 3260 * ífM&TE 2SC 3261 „ « S Æ X SANYO X NEC B ÍL HITACHI ^ 2SC2555 2SC3322 fé T MATSUSHITA ✓ JE 2SC 3266 ✓ S 3£ 2SD1246 2SC 3267 * $ 2SD1246 2SC 3268 3t $ 2SD1295 □- A 2SC2271 □- A

2SB0968

Abstract: 2SB968 2SD1295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SB0968

Abstract: 2SB968 2SD1295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1295 ue pl d in an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1295 • Package ■ Features

2SB0968

Abstract: 2SD1295
Contextual Info: Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm 0.8 max. 2.5±0.1 • Possible to solder radiation fin directly to printed circuit board • Output of 4 W can be obtained by a complementary pair with 2SB0968 0.5±0.1 1.8±0.1 7.3±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 • Package ■ Features • Possible to solder radiation fin directly to printed circuit board

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm 0.8 max. 2.5±0.1 • Possible to solder radiation fin directly to printed circuit board • Output of 4 W can be obtained by a complementary pair with

2SB968

Abstract: 2SD1295
Contextual Info: 2SD1295 2SD1295 '> IJ N P N x k? ^ + Output Amplifier * > 9 ' /C o m p lem en tary Pair with 2SB968 2SB968 t :• S i N P N E p it a x ia l P la n a r U n it ! mm Ü /F e a tu re 2SB968 t n > 7 ‘ ') / > 9 'J ^ T X 'th tl 4 W • 4 W output in complementary pair with 2SB968

2SB0968

Abstract: 2SD1295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SB0968 6.5±0.1 5.3±0.1 4.35±0.1 0.8 max. 1.8±0.1 0.75±0.1 2.3±0.1

2SB0968

Abstract: 2SB968 2SD1295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 Unit: mm 2.3±0.1 0.8 max. 2 1 • Absolute Maximum Ratings Ta = 25°C

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry