2SC5361 Search Results

2SC5361

Contextual Info: TO SH IBA 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5361 SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS Unit in mm 1 0 .3 M A X . 1.32 • Excellent Switching Times : tf = 0.5 jus Max. (l£ = 1.2 A)

2SC5361

Contextual Info: TOSHIBA 2SC5361 2SC5361 TO S H IB A TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm SW ITCH IN G REGULATOR APPLICATIO NS HIGH V O LTAG E SW ITCHING APPLICATIO NS 10.3MAX. DC-DC CONVERTER APPLICATIO NS • • • 1.32 Excellent Switching Times : tf = 0.5 /¿s Max. (l£ = 1.2 A)

transistor npn C536

Contextual Info: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V

Contextual Info: T O S H IB A 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5361 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 10.3MAX DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf = 0.5 /us Max. (Iq = 1.2 A)

transistor npn C536

Abstract: C5361 2SC5361
Contextual Info: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V

2SC5361

Contextual Info: TOSHIBA 2SC5361 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 10.3MAX. DC-DC CONVERTER APPLICATIONS • • • 1.32 Excellent Switching Times : tf = 0.5 /us Max. (l£ = 1.2 A)

Contextual Info: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V

2SC5361

Contextual Info: TOSHIBA 2SC5361 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5361 SWITCHING REGULATOR APPLICATIONS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 10.3MAX. DC-DC CONVERTER APPLICATIONS 1.32 • Excellent Switching Times : tf = 0.5 /¿s Max. (l£ = 1.2 A)

Contextual Info: 2SC5361 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5361 SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf= 0.5/us Max. (Iç = 1.2A) High Collectors Breakdown Voltage : V q e q = 800V

C5361

Abstract: 2SC5361
Contextual Info: 2SC5361 東芝トランジスタ シリコンNPN三重拡散形 2SC5361 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • 高速です。 : tf = 0.5 s 最大 (IC = 1.2 A)

transistor npn C536

Abstract: 2SC5361
Contextual Info: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Unit: mm Excellent switching times: tf = 0.5 s max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

transistor compatible 2SK3569

Abstract: TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler
Contextual Info: 2009-3 SYSTEM CATALOG Semiconductors for Power Supplies SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng AC-Input Switching Power Supply Circuits and Recommended New Product Series ● Secondary rectifier 1. Ultra-high-speed N-channel trench MOSFET U-MOSIII-H Series

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

TK10A60D

Abstract: 4614 mosfet 2sk3911 TB6817WBG TK15A50D TPCA8030-H TCV7102F TB-7005 TPC8A03 CMS19
Contextual Info: システムカタログ 2009-3 システムカタログ 電源用半導体 SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / AC入力スイッチング電源回路と推奨新製品シリーズ ~ ● パワーマネジメント部

transistor 2sc5353

Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Contextual Info: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

2SC2625

Abstract: power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600
Contextual Info: STI Type: 2C5000 Industry Type: 2C5000 V CEO: ICBO ICEX: h FE: IC: V CE: Case Style: STI Type: 2N2453DIE Industry Type: 2C2453 V CEO: 30 ICBO ICEX: h FE: 150 IC: 1.0m V CE: Case Style: STI Type: 2N3807DIE Industry Type: 2C3807 V CEO: 60 ICBO ICEX: h FE: 300

TB1253N

Abstract: TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F TB1238BN F1814B LB 122s
Contextual Info: 2000-2 エネルギーとエレクトロニクス 東芝半導体システムカタログ TV編 Y1A1AH TVの機能別基本ブロック図 音声処理部 周波数シンセサイザ部 音声多重復調 SIF UHF/VHF チューナ サラウンド 機能 SAW

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SC4793 2sa1837

Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Contextual Info: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ