2SC4871 Search Results

4336

Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
Contextual Info: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329

transistor kt 925

Abstract: 2SC4871 ITR07697 ITR07698 ITR07699 ITR07700 dc Volume control ic Specification zo 607
Contextual Info: Ordering number:ENN4857 NPN Epitaxial Planar Silicon Transistor 2SC4871 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • High cutoff frequency : fT=10GHz typ. · High gain : ⏐S21e⏐2=13dB typ f=1GHz . · Low noise : NF=1.3dB typ (f=1GHz).

gh 311

Abstract: N4857 2SC4871 ITR07697 ITR07698 ITR07699 ITR07700 ITR07701 ITR07702 IC163
Contextual Info: 注文コード No. N 4 8 5 7 2SC4871 No. N4857 30300 2SC4871 特長 NPN エピタキシァルプレーナ形シリコントランジスタ UHF ~ S バンド低雑音増幅 , 発振用 ・しゃ断周波数が高い：fT=10GHz typ。 ・高利得である：⏐S21e⏐2=13dB typ（f=1GHz）

transistor kt 925

Abstract: Kt 0912 2SC4871
Contextual Info: Ordering number:EN4857 NPN Epitaxial Planar Silicon Transistor 2SC4871 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ f=1GHz . · Low noise : NF=1.3dB typ (f=1GHz).

transistor kt 925

Contextual Info: Ordering number:ENN4857 NPN Epitaxial Planar Silicon Transistor 2SC4871 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ f=1GHz . · Low noise : NF=1.3dB typ (f=1GHz).

007B

Abstract: 2SC4871 ZS22 ac3b 48571
Contextual Info: Ordering number: EN4857 2SC4871 No.4857 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amp, OSC Applications I F e a tu re s • High cutoff frequency : fp = lOGIiz typ. • High gain: I S21e I z= 13dB typ f= lG H z . • Low noise : NF = 1.3dB typ (f= 1GHz).

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

2SC4872

Abstract: 2SC4837 2SC4853 2SC4854 2SC4855 2SC4856 2SC4857 2SC4858 2SC4859 2SC4860
Contextual Info: - 216 - W. Ä T a = 2 5 ^ , * £ P iâ T c = 2 5 T î WH 2SC 4837 2SC4853 2SC4854 2SC4855 2SC4856 2SC4857 2SC4858 2SC4859 2SC4860 2SC4861 2SC4862 2SC4863 2SC4864 2SC4865 2SC4866 2SC4867 2SC4868 2SC4869 2SC4870 2SC4872 2SC4873 2SC4884 2SC4885 2SC4890 2SC4891

2Sc485

Abstract: 2SC4857 2SC4863 2SC463 2SC4856
Contextual Info: Transistors for Telephones Low-voltage, Low-current, High-frequency Transistor 2SC4853 Parameter Symbol D C current amplification factor Measurement conditions hFE Forward transfer gain VCE = 1 V, lc = 1 mA 5 V CB = 1 V, f = 1 M H z 0.6 V CE = 1 V, lc = 1 mA, f = 1 G H z

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

MARKING 201

Abstract: j200 transistor SANYO SS 1001 2SC4867 2SC4871 FH201
Contextual Info: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 VCO OSC Circuit Applications Package Dimensions unit:mm 2149 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6

j200 transistor

Abstract: 2SC4867 2SC4871 FH201 gh 311 TA1315 marking 201 IT00338 SANYO SS 1001
Contextual Info: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 VCO OSC Circuit Applications Package Dimensions unit:mm 2149 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6

2SC3998

Abstract: 2sc4640 4793 2SC1815 2sd637 2sc2555 2SC4804 C4463 4802 2SD1546
Contextual Info: - m « Type No. a € Manuf. H * SANYO X £ TOSHIBA B Is NEC B 3¿ HITACHI S ± Ä FUJITSU fâ T MATSUSHITA 2SC 4773 □— A 2SC4406 2SC4244 2SC4463 2SC3932 2SC 4774 * □— A 2SC4407 2SC4250 2SC44S3 2SC4670 2SC 4775 □— A 2SC 4776 □— A 2SC4640 2SC1815

2sc4857

Abstract: 2SC4872 2sc487 2sc4856 2sc4859
Contextual Info: I High-Performance Si Bipolartransistor fT > 5GHz Series Features High Gain, Low Noise G -III-NRP (G iga-lll-N oise Reduction Process) technology subm icron hyperfine process developed for high gain and low noise characteristics Low Power Dissipation High perform ance at low voltage and low current for low power dissipation

transistor 2sC486

Abstract: 2sc486 2SC4870 2SC4872 2sc4856 2SC485
Contextual Info: S NEW P R O D U C T VERY HIGH-FREQUENCY TRANSISTOR 4 P f V o SERIES Na2 Newly d e v e l o p e d SANYO v e r y h i g h - f r e q u e n c y t r a n s i s t o r s c a n be u s e d f o r v a r i o u s a p p l i c a t i o n s s u ch a s f o r c o m m u n ic a t io n e q u ip m e n t

2SC4867

Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE
Contextual Info: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in

2sk303

Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
Contextual Info: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4

2SC4872

Abstract: 2sc4870
Contextual Info: s m m NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES 1.2 Newly developed SANYO very high-frequency transistors can be used for various applications such as for communication equipment and measuring equipment. They are superior when used with low voltage drive.

Contextual Info: SA/iYO Lists for- T y p e No. 2SA type_ Type No. ma rk- Package ing 2SA 1252 D • C p E • 2 SA 125 6 C p 2 SA 125 7 G • C p 2 SA 13 3 1 0 • C p A L 2SA1338 C p 2 SA 13 4 1 B L c p 2 SA 134 2 C L c p 2 SA 134 3 D L c p 2 SA 1344 E L c p

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi