2SC463 Search Results

3701A

Abstract: 2SC4632
Contextual Info: Ordering num ber: EN 3701A 2SC4632 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F e a tu r e s • High breakdown voltage V qeo min = 1200V . • Sm all Cob (typical Cob = 1.6pF). •Full-isolation package.

2sc4630

Contextual Info: Ordering num ber: EN3699A N0.3699A 2SC4630 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features • High breakdown voltage Vceo min=900V . • Small Cob (typical Cob=2.8pF). •Full isolation package.

3703a

Abstract: 2SC4634 4634
Contextual Info: O rd e rin g n u m b e r: EN3703A SA%YO No.3703A 2SC4634 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications i Features • High breakdown voltage VceO min = 1500V . • Small Cob (typical Cob = 1.5pF). • Full-isolation package.

2SC4637

Contextual Info: O rd e rin g n u m b e r :E N 3706A N0.37O6A 2SC4637 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features • High breakdown voltage Vceo min = 1800V . • Small Cob (typical Cob = 1.8pF). • Full-isolation package.

2SC4631LS

Abstract: ITR07322 ITR07323 ITR07324 ITR07325 ITR07327
Contextual Info: Ordering number : ENN3700B 2SC4631LS NPN Triple Diffused Planar Silicon Transistor 2SC4631LS 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=900V . Small Cob(typical Cob=5.0pF).

37021

Abstract: 11599HA 2SC4633 IC 37021
Contextual Info: Ordering number:EN3702A NPN Triple Diffused Planar Silicon Transistor 2SC4633 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1200V . · Small Cob (typical Cob=2.0pF). · Full-isolation package.

11599HA

Abstract: 2SC4631
Contextual Info: Ordering number:EN3700A NPN Triple Diffused Planar Silicon Transistor 2SC4631 900V/300mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=900V . · Small Cob (typical Cob=5.0pF). · Full-isolation package.

11599HA

Abstract: 2SC4634
Contextual Info: Ordering number:EN3703A NPN Triple Diffused Planar Silicon Transistor 2SC4634 1500V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1500V . · Small Cob (typical Cob=1.5pF). · Full-isolation package.

1p39

Abstract: 2SC4639 H300 HI50
Contextual Info: f SAJWO i NO. 3 3 60 1120 ffl 2SA1781/2SC4639 -‘¡ m r t v ' r - w f c f t . -i'v br/xi^-ft. ««w.tfqreg ?»*>., w P*9(i. 2S A 1 7 8 1 0 W f r * ^ T ff A b s o lu te Maximum R a tin g s /T a ^ B T ^ .' — ^W JE •x ^ u n it VCBO 3?*5 EE V cco v 6 * •Ai - ^ W ±

2SC463

Abstract: 2SC4638
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4638 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)

2SC4631LS

Abstract: ITR07322 ITR07323 ITR07324 ITR07325 ITR07327 AX750
Contextual Info: Ordering number : ENN3700B 2SC4631LS NPN Triple Diffused Planar Silicon Transistor 2SC4631LS 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=900V . Small Cob(typical Cob=5.0pF).

Contextual Info: 2SC4635LS Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)1.5k V(BR)CBO (V)1.5k I(C) Max. (A)20m Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

IC 37021

Abstract: 2SC4633 37021 EN3702A
Contextual Info: Ordering num ber:EN3702A _ 2SC4633 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F eatu re s • High breakdown voltage Vceo min = 1200V . •Small Cob (typical Cob = 2.0pF). ■Full-isolation package.

Contextual Info: Power Transistors 2SC4638 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 2.7±0.2 Symbol Rating Unit Collector-base voltage Emitter open VCBO 800 V Collector-emitter voltage (E-B short) VCES 800 VCEO 500 V Emitter-base voltage (Collector open)

2SC4630LS

Abstract: ITR07313 ITR07314 ITR07315 ITR07316 ITR07317 ITR07318
Contextual Info: Ordering number : ENN3699B 2SC4630LS NPN Triple Diffused Planar Silicon Transistor 2SC4630LS 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=900V . Small Cob(typical Cob=2.8pF).

2SC4635

Abstract: 11599HA
Contextual Info: Ordering number:EN3704A NPN Triple Diffused Planar Silicon Transistor 2SC4635 1500V/20mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1500V . · Small Cob (typical Cob=1.9pF). · Full-isolation package.

Contextual Info: Ordering num ber: E N 3704A _ 2SC4635 NPN Triple Diffused Planar Silicon Transistor 1500V/20mA High-Voltage Amp, High-Voltage Switching Applications Features • High breakdown voltage Vceo min= 1500V . •Small Cob (typical Cob = 1.9pF).

IC 37021

Abstract: 2sc4633
Contextual Info: I O rd e rin g num ber:E N 3702A _ SAiYO i 2SC4633 NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amp, High-Voltage Switching Applications Feature^ • High breakdown voltage Vceo min = 1200V . • Small Cob (typical Gob= 2.0pF).

2SC4639

Abstract: FC18 FC18F 2SK2394 ITR10364 FET MARKING DB64
Contextual Info: Ordering number:ENN4983 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET FC18 High-Frequency Amp, AM Amp, Low-Frequency Amp Applications Package Dimensions • Composed of 2 chips, one being equivalent to the 2SK2394 and the other the 2SC4639, in the

2SC4634LS

Abstract: ITR07349 ITR07350 ITR07351 ITR07352 ITR07353
Contextual Info: Ordering number : ENN3703B 2SC4634LS NPN Triple Diffused Planar Silicon Transistor 2SC4634LS 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=1500V . Small Cob(typical Cob=1.5pF).

IC 37021

Abstract: 2SC4633LS ITR07340 ITR07341 ITR07342 ITR07343 ITR07344 37021 ta3427 2079D
Contextual Info: Ordering number : ENN3702B 2SC4633LS NPN Triple Diffused Planar Silicon Transistor 2SC4633LS 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=1200V . Small Cob(typical Cob=2.0pF).

2SC4632

Abstract: 11599HA ICP30
Contextual Info: Ordering number:EN3701A NPN Triple Diffused Planar Silicon Transistor 2SC4632 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1200V . · Small Cob (typical Cob=1.6pF). · Full-isolation package.

2SC4636 equivalent

Abstract: 2SC4636 11599HA EN3705A
Contextual Info: Ordering number:EN3705A NPN Triple Diffused Planar Silicon Transistor 2SC4636 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1800V . · Small Cob (typical Cob=1.4pF). · Full-isolation package.

2SC4635

Contextual Info: O rd e rin g n u m b e r :E N 3704A 2SC4635 NPN Triple Diffused Planar Silicon Transistor High'Voltage Amp, High-Voltage Switching Applications F eatures • High breakdown voltage Vceo min = 1500V . •Small Cob (typical Cob = 1.9pF). • Full-isolation package.