7CJE Search Results

Contextual Info: SGS-THOMSON STP6NB50 STP6NB50FP raoœ@IILiCTMII S N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STP6NB50 STP6NB50FP • . . . . V dss RoS on Id 500 V 500 V < 1.5 n < 1.5 a 5.8 A 3.4 A TYPICAL RDS(on) = 1.35 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

LW-LCD TV

Abstract: 69 lvb p38a CODE EFI .ASM rjz ah TI7C DSI LCD TFT fci hm1 FPI 3I 131cc 0297-f
Contextual Info: ÿ * — & • S '— h M aÈ M o s m w a s s M O S fn te g ra te d C ircuit P D 1 7 6 A G F - 1 1 •ttlcfflFM, M W , 7 0 ,J X 4 ^ r - 7 , fc f y I- P L L J 1 5 ^ v > -tr-^ < 1 f, • V > ^ V U ^ * 7 ^ • * 7 - f i 7 P ¡iPD17006AGF-011 f i , EWiCDFM, MW, L W ^ 'S if

Contextual Info: 3 G E J> • 7 ci 2 cî 5 3 7 D S C S -T H O M S O N HLIim RDD gi 3 D G M 1 b ■ T \ 3 A - 1 3 s 6 S’ T!,0MS0K SG SP479 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP479 VDSS 500 V RDS(on 0.7 ß 9A • • • • HIGH SPEED SWITCHING APPLICATIONS

LT332

Abstract: T74LS373B1
Contextual Info: s G S-THOfISON D7 E D | 7 ^ 2 3 7 0 D i t 32e] 5 H LOW POWER SCH0TTKY INTEGRATED CIRCUITS • T54LS373 T74LS373 ^ 67C 16458 T -4 6 -Û 7 -11 O CTAL TRANSPARENT LATCH W ITH 3-S TA TE OUTPUTS DESCRIPTION The T54LS373/T74LS373 consists of eight latches with 3-state outputs for bus organized system ap­

hcf 4053 switching ic

Abstract: 4051 bf hcf4053b
Contextual Info: S G S - T H O M S O N 07C D I 7 1 3 1 3 3 7 0 0 1 4 A 0 4 7 I c o s /iw o s IN T E G R A T E D C IR C U IT S rrrrttH c c w c *! K B S S S _ _ _ 4-1C 0 8 8 1 7 D T'&M t PRELIMINARY DATA ANALOG MULTIPLEXERS-DEMULTIPLEXERS: 4051B - SINGLE 8-CHANNEL 4052B - DIFFERENTIAL 4-CHANNEL

Contextual Info: SEE ]> • ? q g q g 37 00377^ S C S -T H O M S O N I1WMDÊI fl5 b ■ S G T H s r s - thohson M28F102 CMOS 1 Megabit 64K x 16 FLASH MEMORY ADVANCE DATA FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION - Standby Current: 100uA Max 10,000 ERASE/PROGRAM CYCLES

ic Lb 598 d

Abstract: GS121 ic Lb 598 sgs120
Contextual Info: S G S-THONSON D7E D I 7 ^ ^ 2 3 7 67C 15347 D 001744_S '7"- T 1 g S Î2 Ô S G S 1 2 5 3 SGSIEI SGSÎ26 1 SGS122 S6S127 EPITAXIAL-BASE NPN/PNP T'33 ~3 l POW ER D A R LIN G T O N S The SGS120, SGS121 and SG S122 are silicon epitaxial-base NPN transistors in monolithic

GI 536 DIODES

Abstract: 1N 414 B diode 1n 148 1N6072 1n6040
Contextual Info: 30E D £ Z T Ë MN 7^2=1537 0D31T3b T S G S -T H O M S O N s 6 M tg e m iC T íM O tg S 1N s t - - t h o h so n 6 0 4 0 ,A 1N 6 0 7 2 ,A BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS • HIGH SURG E CAPABILITY : 1.5 kW/1 ms EXPO ■ VERY FAST CLAMPING TIME : 5 ns