2SC460 Search Results

2SC3645

Contextual Info: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1761 U nit in mm POWER AMPLIFIER APPLICATIONS. POW ER SW ITCHING APPLICATIONS. • • • Low Collector-Emitter Saturation Voltage : v CE sat = - 0.5V (Max.) (Ic = - 1.5A) High Speed Switching Time : tstg = 0.2(u s (Typ.) Complementary to 2SC4604.

Contextual Info: Transistors SMD Type Product specification 2SC4600 TO-263 1 .2 7 -0+ 0.1.1 Features Unit: mm Surface mount type device making the following possible. +0.1 1.27-0.1 +0.2 4.57-0.2 Reduction in the number of manufacturing processes Small size of 2SC4600-applied equipment.

Contextual Info: TOSHIBA 2SC4605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT 2SC4605 Unit in mm VIDEO OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY HIGH SPEED SWITCHING APPLICATIONS 10 ±0.3 • • • • High Transition Frequency : fr = 1.1GHz (Typ.) Low Collector Output Capacitance : C0b = 4.8pF (Typ.)

c4604

Abstract: 2SC4604 2SA1761
Contextual Info: 2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High-speed switching: tstg = 0.5 µs (typ.)

2SC460B

Abstract: 2SC460 2SC461 J009 Hitachi DSA002755 2SC460 B
Contextual Info: 2SC460, 2SC461 Silicon NPN Epitaxial Planar Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline 2SC460, 2SC461 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SC460 2SC461 Unit Collector to base voltage VCBO 30

Contextual Info: Panasonic Transistor 2SC4606 Silicon NPN epitaxial planer type For low -frequency d river am plification C om ple m e ntary to 2 S A 1 762 • Features • High collector to emitter voltage Vceo. • Optimum for the driver stage of a low-frequency and 25 to 30W

Contextual Info: Transistor 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 2.5±0.1 1.0 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W

Contextual Info: Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm 2.5±0.1 6.9±0.1 1.0 R 0.9 • Absolute Maximum Ratings * (Ta=25˚C) (0.85) Symbol Ratings Unit Collector to base voltage VCBO

2SC4605

Contextual Info: T O S H IB A 2SC4605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT 2SC4605 Unit in mm VIDEO OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY HIGH SPEED SWITCHING APPLICATIONS r <v> • • • • High Transition Frequency : fx = 1.1GHz (Typ.) Low Collector Output Capacitance : C0b = 4.8pF (Typ.)

2sc460

Abstract: 2SC460B 2SC461 2SC461C 2SC460C 2SC460A 2SC460 B
Contextual Info: 2SC460,2SC461 Silicon NPN Epitaxial Planar HITACHI Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline TO-92 2 1. Emitter 2. Collector 3. Base 3 IjJ 2 285 2SC460,2SC461 Absolute Maximum Ratings (Ta = 25°C) Item

2SA1762

Abstract: 2SC4606
Contextual Info: Transistor 2SC4606 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 6.9±0.1 1.0 0.85 4.5±0.1 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W

Contextual Info: 2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High-speed switching: tstg = 0.5 µs (typ.)

2SC460B

Abstract: 2SC460 2SC461 2SC460CTZ 2SC461B 4.5-MHz IF 2SC460A 2SC460C PRSS0003DA-C
Contextual Info: 2SC460, 2SC461 Silicon NPN Epitaxial Planar REJ03G0682-0200 Previous ADE-208-1046 Rev.2.00 Aug.10.2005 Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)

2SC461

Abstract: 2SC460 34jL 455k 2SC46 2SC461C 2SC465B 34-jL 2SC46o
Contextual Info: HITACHI 2SC460, 2SC461 S IL IC O N N P N E P iT A X IA L P L A N A R 2SC 4C 0 H IG H F R E Q U E N C Y A M P L IF IE R , M IX E R 2SC4Ê1 V H F A M P L IF IE R , M IX E R J 1 I r % li. lau . Ì. Kßzilfi 2. Cuites:» y Bale < ; ] ir: mul ' i t : . 1 fz î^ r*

2SC460

Abstract: 2SC461 2SC460B Hitachi DSA0076 2SC461B 2SC460A 2SC460C 2SC461C 2SC460 B
Contextual Info: 2SC460, 2SC461 Silicon NPN Epitaxial Planar ADE-208-1046 Z 1st. Edition Mar. 2001 Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC460, 2SC461 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm Rating Unit Collector-base voltage Emitter open VCBO −80 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)

2SC4607

Abstract: 2SC4614 2SC4596 2sc4622 2SC4621 2SC4570 2SC4571 2SC4572 2SC4573 2SC4574
Contextual Info: - 208 - Ta=25‘C. *EpfáTc=25cC 2SC4570 2SC4571 2SC4572 2SC4573 2SC4574 2SC4575 2SC4576 2SC4578 2SC4579 2SC4580 2SC4581 2SC4582 2SC4589 2SC4591 2SC4592 2SC4593 2SC4594 2SC4595 2SC4596 2SC4597 2SC4598 2SC4599 2SC4600 2SC460Î 2SC4602 2SC4603 2SC4606 2SC4607

2SA1762

Abstract: 2SC4606
Contextual Info: Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation

2SA1762

Abstract: 2SC4606
Contextual Info: Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm 6.9±0.1 1.0 0.85 * Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO

2SA1762

Abstract: 2SC4606
Contextual Info: Transistors 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 2.5±0.1 1.0 4.1±0.2 2.0±0.2 4.5±0.1 R 0.9 R 0.7 2.4±0.2 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

Contextual Info: 2SC460, 2SC461 Silicon NPN Epitaxial Planar REJ03G0682-0200 Previous ADE-208-1046 Rev.2.00 Aug.10.2005 Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)

Contextual Info: 2SC4600N Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)800 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)