2SA1762 Search Results

Contextual Info: Transistor 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 2.5±0.1 1.0 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W

Contextual Info: Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm 2.5±0.1 6.9±0.1 1.0 R 0.9 • Absolute Maximum Ratings * (Ta=25˚C) (0.85) Symbol Ratings Unit Collector to base voltage VCBO

2SA1762

Abstract: 2SC4606
Contextual Info: Transistor 2SC4606 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 6.9±0.1 1.0 0.85 4.5±0.1 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W

Contextual Info: Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm Rating Unit Collector-base voltage Emitter open VCBO −80 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)

2SA1762

Abstract: 2SC4606
Contextual Info: Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation

2SA1762

Abstract: 2SC4606
Contextual Info: Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm 6.9±0.1 1.0 0.85 * Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO

2SA1762

Abstract: 2SC4606
Contextual Info: Transistors 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 2.5±0.1 1.0 4.1±0.2 2.0±0.2 4.5±0.1 R 0.9 R 0.7 2.4±0.2 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30

2SA1762

Abstract: 2SC4606
Contextual Info: Transistors 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 2.5±0.1 1.0 3.5±0.1 4.5±0.1 4.1±0.2 2.0±0.2 R 0.9 R 0.7 2.4±0.2 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30

Contextual Info: Transistors 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 2.5±0.1 1.0 R 0.9 2.4±0.2 (0.85) ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te

Contextual Info: Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm 2.5±0.1 • High collector-emitter voltage Base open VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier

2SA1762

Abstract: 2SC4606
Contextual Info: Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm 6.9±0.1 1.0 0.85 * Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO

Contextual Info: Transistors 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll

2SA1762

Abstract: 2SC4606 japanese transistor manual
Contextual Info: Transistor 2SC4606 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 6.9±0.1 1.0 0.85 4.5±0.1 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W

japanese transistor manual

Abstract: 2SA1762 2SC4606
Contextual Info: Transistor 2SC4606 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 2.5±0.1 1.0 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W

Contextual Info: Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm Rating Unit Collector-base voltage Emitter open VCBO −80 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

2SC4607

Abstract: 2SC4614 2SC4596 2sc4622 2SC4621 2SC4570 2SC4571 2SC4572 2SC4573 2SC4574
Contextual Info: - 208 - Ta=25‘C. *EpfáTc=25cC 2SC4570 2SC4571 2SC4572 2SC4573 2SC4574 2SC4575 2SC4576 2SC4578 2SC4579 2SC4580 2SC4581 2SC4582 2SC4589 2SC4591 2SC4592 2SC4593 2SC4594 2SC4595 2SC4596 2SC4597 2SC4598 2SC4599 2SC4600 2SC460Î 2SC4602 2SC4603 2SC4606 2SC4607

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463