2SC4249 Search Results

2SC4249

Contextual Info: T O S H IB A 2SC4249 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL PLANAR TYPE 2SC4249 TV VHF RF AMPLIFIER APPLICATIONS • • • High Gain : Gpe = 24dB Typ. (f=200MHz) Low Noise : NF = 2.0dB (Typ.) (f=200MHz) Excellent Forward AGC Characteristics MAXIMUM RATINGS (Ta = 25°C)

EL 14v 4c

Abstract: 2SC4249 m15t F1060
Contextual Info: TO SH IBA 2SC4249 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL PLANAR TYPE 2SC4249 TV VHF RF AMPLIFIER APPLICATIONS • • • High Gain : Gpe = 24dB Typ. (f=200MHz) Low Noise : NF = 2.0dB (Typ.) (f=200MHz) Excellent Forward AGO Characteristics MAXIMUM RATINGS (Ta = 25°C)

2SC4249

Contextual Info: 2SC4249 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4249 TV VHF RF Amplifier Applications • High gain: Gpe = 24dB typ. (f = 200 MHz) · Low noise: NF = 2.0dB (typ.) (f = 200 MHz) · Excellent forward AGC characteristics Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: TO SH IB A 2SC4249 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL PLANAR TYPE 2SC4249 TV VHF RF AMPLIFIER APPLICATIONS • • • High Gain : Gpe = 24dB Typ. (f=200MHz) Low Noise : NF = 2.0dB (Typ.) (f=200MHz) Excellent Forward AGC Characteristics MAXIMUM RATINGS (Ta = 25°C)

2SC4249

Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4249 Features High gain: Gpe = 24dB typ. (f = 200 MHz) Low noise: NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4249 TV VHF RF A MPLIFIER APPLICATIONS Unit in nun 2.1 ±0.1 . High Gain : Gpe=24dB Typ. (f=200MHz) . Low Noise : N F = 2 .OdB(Typ.) (f=200MHz) . Excellent Forward AGC Characteristics _ CM o •n o -H CJ Iin •£> 1ft

EL 14v 4c

Abstract: 2SC4249 2101 Toshiba
Contextual Info: TOSHIBA 2SC4249 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL PLANAR TYPE 2SC4249 Unit in mm TV VHF RF AM PLIFIER APPLICATIONS 2.1 ± 0.1 • High Gain : Gpe = 24dB Typ. (f=200MHz) • Low Noise : NF = 2.0dB (Typ.) (f=200MHz) • Excellent Forward AGC Characteristics.

Contextual Info: 2SC4249 SILICQN NPN EPITAXIAL P LA N A R T Y P E T R A N SIST O R U nit in mm TV VHF RF A M PLIFIER APPLICATIONS. • 2.1 ÍD .1 High Gain : Gpe = 24dB Typ. (f=200MHz) Low Noise : NF = 2.0dB(Typ.)(f=200M Hz) Excellent Forward AGC Characteristics. 2 M A X IM U M RATINGS (Ta = 25°C)

2SC4288A

Abstract: 2SC4288 2sc4292 2sc429 2SC4278 150D 2SC4248 2SC4249 2SC4250 2SC4251
Contextual Info: - 194 - m % w Ta=25‘C, *Ep(àTc=25tC m î± 2SC4248 2SC4249 2SC4250 MS 2SC4251 MS MS ms MS sm 2SC4252 2SC4253 2SC4255 2SC4256 2SC4257 2SC4258 2SC4259 2SC4260 2SC4261 2SC4262 2SC4263 2SC4264 2SC4265 2SC4266 2SC4269 2SC4270 2SC4271 2SC4272 2SC4273 2SC4274

Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR 2SC4249 TnCUIDA • w w ■ II TECHNICAL DATA SILICON NPN EPITAXIAL PLANAR TYPE 2SC4249 U nit in mm TV VHF RF AMPLIFIER APPLICATIONS 2.1 ± 0.1 • High Gain ; Gpe = 24dB (Typ.) (f=200MHz) • Low Noise : NF = 2.0dB (Typ.) (f=200MHz)

Contextual Info: 2SC4249 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4249 TV VHF RF Amplifier Applications • Unit: mm High gain: Gpe = 24dB typ. (f = 200 MHz) • Low noise: NF = 2.0dB (typ.) (f = 200 MHz) • Excellent forward AGC characteristics Absolute Maximum Ratings (Ta = 25°C)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2sc3943

Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
Contextual Info: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —

4288A

Abstract: 2sc3936 hitachi 4269 2SC4903 2SC3874 2SC3995 2SC4186 2SC3931 2SC3210 2SC4083
Contextual Info: - 18 6 - Si € Type No. tt € Manuf. 1nJ 1“ ^ £ tN 2SC 4247 2SC 4248 2SC 4249 H * SANYO a s£ % TOSHIBA NEC ± a FUJITSU % T MATSUSHITA 2SC4404 2SC4186 2SC4903 2SC3934 2SC4404 2SC4186 2SC4264 2SC3934 2SC4263 2SC3931 2SC4400 2SC 4250 tL HITACHI H £ MITSUBISHI

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

SV153A

Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
Contextual Info: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Contextual Info: 1. Using Device Selection Flowchart 1. Using Device Selection Flowchart 17 1. Using Device Selection Flowchart 1.1 General Purpose Low Frequency Transistor Selection Method Start I S ig n a l Frequency H igh Frequency ~ G H Z Low Frequency (D C ~ S e v e ra l M HZ)

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188