2SB1085 Search Results

Contextual Info: ROHM CO LTD - MOE D 000SS3T h 7 > y X ^ / T ransistors 2SB1085 — 2SB11 ^ BBRHF1 PNP y >J□ > ' 1T -3 3 - / ^ h7>y'z$ fi£J§5j£11>^^ffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • íl-Jfé \f-;£ !3 /'D im e n s io n s U n it: mm

2SB1085

Abstract: 2SD1562
Contextual Info: Inchange Semiconductor Product Specification 2SB1085 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562 ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications

2SB1085A

Abstract: 2SD1562A
Contextual Info: JMnic Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562A ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING

2SB1085

Abstract: 2SD1562
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1085 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1562 APPLICATIONS ·Designed for low frequency power amplifier applications.

2SB1085A

Contextual Info: 2SB1085A h ~p > y X £ /T ra n s is to rs 9 C D 4 8 5 A I ^ + ' > 7 ^ 7 pU - ^ P N P y 'J = i > h 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistor filÜ S ^ ^ lS 'U ffl/L o w Freq. Power Amp. • W Ï& r j- ^ i a / D im e n s i o n s Unit : mm 1) S W E E T ' * * (B V Ce o = - 1 6 0 V ) o

2SB1085A

Contextual Info: S "7 > v 7, £ /Transistors 2SB1085A PNP '> ';= !> Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • &M : • i>|.JfiT|-;£|I]/Dim ensions U n it: mm 1) 7 i . 5 (BVC e o = - 1 60V )o 2) A S O A 'l l 'o 3 ) W l i < , C o b A ^ J ^ l ' o 4) 2 S D 1 5 6 2 A t = J > y j T i > 5 o

Contextual Info: 2SB1085 / T ransistors i W + y W l ' -fls—m PNP '>•;=!> Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • • T T /ilH / Dimensions U n it: mm 1) ¡ S t E ? <£>-3 (B V CEo = - 1 2 0 V ) o 2) A S O t f £ ^ „ 3 ) f r A 4 < , C o b W 'S l'o

2SD1562

Abstract: 2SD1562A 2sb1085
Contextual Info: Inchange Semiconductor Product Specification 2SD1562 2SD1562A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB1085/1085A ・High transition frequency APPLICATIONS ・For low freuqency power amplifier applications

2SB1085A

Abstract: 2SD1562A
Contextual Info: Inchange Semiconductor Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562A ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications

2SB1085

Abstract: 2SD1562
Contextual Info: JMnic Product Specification 2SB1085 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562 ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN

2SB1085

Abstract: 2SD1562
Contextual Info: SavantIC Semiconductor Product Specification 2SB1085 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1562 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

2SB1085A

Abstract: 2SD1562A Silicon PNP Epitaxial Planar Transistor to220
Contextual Info: S "7 > v 7. $ / I ransistors 2SB1085A 2SB1085A Vc$*V7 Vj\s-m PNP y ‘j n > h 7 > 7 * 2 Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ii- J fi\f;£ 0 /D im e n s io n s U n it: mm) 1) ^ S i E T i . 5 (BVCEo = - 1 6 0 V ) o 2) A S O ^ E l'o

2SB1099

Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
Contextual Info: - 74 - S % Ta=25'C, *0JttTc=25l3 m 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1Û76M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086 2SB1086A 2SB1087 2SB1089 2SB1090 2SB1091 2SB1093 2SB1094 2SB1095 2SB1096 2SB1097 2SB1098 2SB1099 2SB1100 2SB1101 2SB1102 2SB1103

2SB1085A

Abstract: 2SD1562A
Contextual Info: SavantIC Semiconductor Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1562A ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

2SB1085

Contextual Info: h ~7 > y X 2 /Transistors 2SB1085 PNP y ' J = i> h7 > v * $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • £>JTÍ'íra ;G 3 / Dimensions U n it: mm (B V c e o = - 1 2 0 V ) o 2) S O A f r 'E ^ V 3 ) f T* ' j i i < , C o b *f ' J ' i t ' 0

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

2sa970

Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Contextual Info: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

2sa1015

Abstract: 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930
Contextual Info: - 8 - m % Type No. 2SA 549A 2SA 550 ^ 2SA 550A 2SA 551 2SA 552 2SA 553 2SA 554 2SA 555 2SA 556 2SA 557 2SA 558 2SA 559 2SA 559A 2SA 560#^ 2SA 561 ^ 2SA 562 % Manuf. B ÍL fâ fâ H B T T £ C î¥ 36 2Ê TOSHIBA 2SA984 2SA562 2SA1015 B a NEC B Al HITACHI 2SA778AK

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.