2SA1822 Search Results

2SA1822

Abstract: A1822 DC DC converter 5v to 200V ic
Contextual Info: TOSHIBA 2SA1822 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S A 1 822 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATION r • Excellent Switching Times ton = l-0/«s Max. , tf= 1 .0 /«s (Max.) at Iç)= —0.3A

Contextual Info: TO SHIBA 2SA1822 2 S A 1 822 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATION Î.2 ± 0.2 1 0 1 0.3 • Excellent Switching Times ton = 1.0//s Max. , tf=1.0,«s (Max.) at I e = - 0 .3 A

2SA1822

Abstract: A1822
Contextual Info: 2SA1822 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SA1822 High-Voltage Switching Applications High-Speed DC-DC Converter Application • Excellent switching times • High collector breakdown voltage: VCEO = −400 V Unit: mm : ton = 1.0 µs max , tf = 1.0 µs (max) at IC = −0.3 A

Contextual Info: TOSHIBA 2SA1822 TOSHIBA TRANSISTOR K SILICON PNP TRIPLE DIFFUSED TYPE 1 r i i Û HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATION U nit in mm 10 + 0.3 , ^3.2 + 0.2 • Excellent Switching Times t On - l - 0 ^ s Max. , tf= 1 .0 ^ s (Max.) a t I q = —0.3A

A1822

Contextual Info: 2SA1822 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1822 High-Voltage Switching Applications High-Speed DC-DC Converter Application • Unit: mm Excellent switching times : ton = 1.0 s max , tf = 1.0 μs (max) at IC = −0.3 A • High collector breakdown voltage: VCEO = −400 V

2SA1822

Abstract: A1822
Contextual Info: 2SA1822 TO SH IBA 2 S A 1 822 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATION 10 ±0.3 r • • Excellent Switching Times ton = 1.0/^s Max. , tf^l.O/^s (Max.) at Ic = —0.3A

Contextual Info: 2SA1822 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SA1822 High-Voltage Switching Applications High-Speed DC-DC Converter Application • Excellent switching times • High collector breakdown voltage: VCEO = −400 V Unit: mm : ton = 1.0 µs max , tf = 1.0 µs (max) at IC = −0.3 A

2SA1822

Abstract: A1822
Contextual Info: TO SH IBA 2SA1822 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S A 1 822 HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATION Unit in mm 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r • Excellent Switching Times i. i n U q jI — ± .\ Jp L S >

Contextual Info: 2SA1822- SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS U nit in mm HIGH VOLTAGE SW ITCHING APPLICATIONS. H IGH SPEED DC-DC CONVERTER A PP LICATIO N . • • 3.2;fcCI.2 2.7 ± 0 .2 Excellent Switching Times ton = 1.0^s(M ax.), tf = l.Oyus(Max.)at I c = -0 .3 A

Contextual Info: 2SA1822 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SA1822 High-Voltage Switching Applications High-Speed DC-DC Converter Application • Excellent switching times • High collector breakdown voltage: VCEO = −400 V Unit: mm : ton = 1.0 µs max , tf = 1.0 µs (max) at IC = −0.3 A

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

2SC4793 2sa1837

Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Contextual Info: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y

2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Contextual Info: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.