2SA1319 Search Results

2SA1319

Abstract: SC3332 2SC3332 H160
Contextual Info: Ordering number:EN 1334C mo 2SA1319/2SC3332 N0.1334C PNP/ NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features ► High breakdown voltage. • Excellent h fE linearity. • Wide ASO and highly resistant to breakdown. • Adoption o f MBIT process.

Contextual Info: Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.

2Sa1319

Abstract: 2SC3332 2SA32 2sa131 ITR03218
Contextual Info: Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.

2SC3332

Contextual Info: Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.

Contextual Info: Ordering nu m ber: EN 1334C 2SA1319/2SC3332 No.l334C PNP/ NPN Epitaxial Planar Silicon Transistors SAiYO High-Voltage Switching Applications Features • High breakdown voltage. • Excellent hFE linearity. • Wide ASO and highly resistant to breakdown. • Adoption of MBIT process.

A1319

Abstract: 2SA1319 1334c
Contextual Info: 7 ^ 7 0 7 1 3 Ordering number:EN 1334C F/ i O O lS b lB 551 2SA1319/2SC3332 N o-1334C PNP/ NPN Epitaxial Planar Silicon Transistors SAIWO i High-Voltage Switching Applications Features • High breakdown voltage. • Excellent hFE linearity. • Wide ASO and highly resistant to breakdown.

Contextual Info: Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.

2SC3332

Abstract: 2SA1319 N133 1334B N1334C
Contextual Info: 注文コード No.N 1 3 3 4 C 2SA1319 / 2SC3332 No. N1334C N0899 ※半導体ニューズ No.1334B とさしかえてください。 2SA1319 / 2SC3332 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高電圧スイッチング用

2Sa1319

Abstract: 2sc3332
Contextual Info: Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sa970

Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Contextual Info: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925

2SA1317

Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Contextual Info: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SC308

Abstract: 2SA1699 2SA1392
Contextual Info: S m a l 1- s i g n a l SA\YO Transistors For low noise, h i g h v o l t a g e a n d g e n e r a l use We have other smal 1-signal transistors which are not included in any classified types nor packages in this document. They are for low noise, high voltage and general use.

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

STK412-750

Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Contextual Info: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc

2SA1281

Abstract: 2SA1281C 2NS401 2SA949Y 2SA429G 2SA1013-0 C 2N4888 2SA429GTM 2SA429 2SA778AK
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number S 10 >= AST5401 2NS401 S05401 TMPT5401 2SA429 2SA940 2SA778K 2SA949 2SA429G-TM-0 2SA12000 lS 20 2S 30 -40 45 SO ~:dl~~r:C PN4888 PN4888 PN4889 PN4889 PN4889 2N4888 2SA916 2SA916 FairchildSC CentralSemi FairchildSC

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2SA1249

Abstract: 2SB63
Contextual Info: S m a l 1- s ig n al ÄMIVO Transistors For low noise, h ig h v o l t a g e and general use ffe have o t h e r s m a l l - s i g n a l low n o i s e , t r a n s i s t o r s which a r e not inc lud ed in any c l a s s i f i e d types nor packages in t h i s document.

2SA1379

Abstract: 2sa1333 2SA1372 2SA1354 2SA1397 2SA1335 2SA1311 2SA1326 2SC3340 2SA1349
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 120W 2SA1301 -160 -12A 150 100 -5 -1A 30* 500 (Tc=25ºC) 150W 2SA1302

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773