ITR03218 Search Results

ITR03218 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.	Original	ENN1334D 2SA1319/2SC3332 2003B 2SA1319/2SC3332] 20IB1 --20IB2 300mA 2SA1319	PDF
2Sa1319 Abstract: 2SC3332 2SA32 2sa131 ITR03218 Contextual Info: Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.	Original	ENN1334D 2SA1319/2SC3332 2003B 2SA1319/2SC3332] 20IB1 --20IB2 300mA 2SA1319 2Sa1319 2SC3332 2SA32 2sa131 ITR03218	PDF
2SC3332 Contextual Info: Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.	Original	ENN1334D 2SA1319/2SC3332 2003B 2SA1319/2SC3332] 20IB1 --20IB2 300mA 2SA1319 2SC3332	PDF
Contextual Info: Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions • Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.	Original	ENN1334D 2SA1319/2SC3332 2003B 2SA1319/2SC3332] 20IB1 --20IB2 300mA 2SA1319	PDF
2SC3332 Abstract: 2SA1319 N133 1334B N1334C Contextual Info: 注文コード No.N 1 3 3 4 C 2SA1319 / 2SC3332 No. N1334C N0899 ※半導体ニューズ No.1334B とさしかえてください。 2SA1319 / 2SC3332 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ高電圧スイッチング用	Original	2SA1319 2SC3332 N1334C N0899 1334B 2SA1319 100mA 2SC3332 N133 1334B N1334C	PDF