2N2419 Search Results

2N4947

Abstract: MU4891 transistors TO-92 case 2N2646 TO-92 2n4948 2n4949 2N241A 2N4871 MU2646 2N264
Contextual Info: IN T R IN S IC S T A N D O F F R A T IO n M IN. r I 2N2417 TYPE 2N 2417A 2N 2417B 2N 2418 2N 2418A 2N 2418B 2N2419 2N241ÔB 2 N2420 2 N2420A 2N 2420B 2N2421 2N 2421A 2N 2421B ! 2N 242 2’ ’ j 2N 2422A • 2N 2422B 2N2646 2N2647 c M A X. 0.51 0.61 0.61 0.51

UJT 2N2646

Abstract: 2n2646 ujt UJT 2N4871 UJT 2N2646 ratings 2N2646 UJT 2N4870 2N2646 TO-92 2N4947 ujt 2N6027 PUT 2N2646
Contextual Info: TARI E R UNIJUNCTION CENTRAL TYPE ; ' ! < i jj I ' í; •f : : ! •] :j ; ij ;j I SEMICONDUCTOR INTRINSIC STANDOFF RATIO r 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420 2N2420A 2N2420B 2N2421 2N2421A 2N2421B 2N2422 2N2422A

transistor 2N4891

Abstract: 45W UHF 2N4891 2N4947 transistor 2n4852 2SH21 Lv42 2n6120 91kohm 2N494
Contextual Info: ADDITIONAL TRANSISTORS Item Number Part Number Polarity Manufacturer Package Style Description Mati. Unijunction Transistors, Cont'd 2N1671A 2N1671B 2N1671C 2N2160 2N2213 2N2213 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420

2n2646

Abstract: 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2840 2n4870 mu4891 *n2418
Contextual Info: TARI E R UNIJUNCTION CENTRAL TYPE ; ' ! < i jj I ' í; •f : : ! •] :j ; ij ;j I INTRINSIC STANDOFF RATIO r 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420 2N2420A 2N2420B 2N2421 2N2421A 2N2421B 2N2422 2N2422A 2N2422B 2N2646

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 350 mW IE 70 mA ie 2 Amps Emitter reverse voltage VB2E 60 Volts Interbase voltage

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2N2646 TO-92

Abstract: 2N3484 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 Ujts 2N2160 ti 2n1671 2N4947 2N2646 2N4870 2n4948
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P* CENTRAL SEMICONDUCTOR bï »EJnfmba aooaaBb ? i l U N IJ U N C T IO N T R A N S IS T O R S (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a w ide tem perature range. These applications include: Pulse Generators, Saw Tooth

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: SEMICONDUCTORS INC OTE D | fil3bbSG □DDOETl 5 | f 3& Unijunction Transistors WALBERN TYPE “bb INTERBASE RESISTANCE Kil n INTRINSIC STANDOFF RATIO VALLEY CURRENT HIN (MA) 2N489 2N489A 2N489B 4.7-6.8 .51-.62 8 2N490 2N490A 2N490B 2N490C 6.2-9.1 .51-.62

2N2458

Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec

2SH25

Abstract: TIS43 2N4891 2N6115 2N3480 2N4891 unijunction 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2647 MOTOROLA mu4894 2SH21
Contextual Info: UNIJUNCTION TRANSISTORS Item Number Part Number Manufacturer PD Max W Intrinsic Standoff Ratio Min Max Ip Max (A) Iv Max (A) Interbase Resistance Min (Ohms)Max VB2Bl Max (V) Operating Temperature Min (OC) Max Package Style NP (P-Typ_ Bas_) KT119A KT119B

2N5431

Abstract: 2N6028A 2N2160 2N2840 7T6027 2N3483 2N4947 2N494A
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P*CENTRAL SE MICONDUCTOR bï » E J n f m b a aooaaBb ? UNIJUNCTION TRANSISTORS (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a wide temperature range. These applications include: Pulse Generators, Saw Tooth

2N4148

Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N4250 2N4147
Contextual Info: DIGITRON ELECTRONIC CORP 3bE D SfiMStrO? 0□ □ □ □ □ S DGE Page #5 DIQITRON ELECTRONIC” 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z ENGINEERING D I G I T R O N E LE C TR ON IC S , CORP.

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

2n491a

Abstract: Helipot 2N469A 2N489A 2N490A MXL-STD-750 2N2417A 2N2418A 2N2422A 2N494A
Contextual Info: MUrS~19500/75B 18 October 1986 SUPERSEDING n / rrra _ t a r nnM * w w w \ j f ««#4 25 October 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, PN, SILICON UNIJUNCTION TYPES 2N489A THROUGH 2N494A. TX2N489A THROUGH TX2N404A. 2N2417A THROUGH 2N2422A, AND TX2N2417A THROUGH TX2N2422A

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

2N2213

Abstract: 2N2046 2N2545 HI-TRON 2N2344 2N2546 transitron diodes 2N2503 2n2047 16RC15 2N2044
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N1847A Franel Corp Inti Rectfr IntlRect JA Semitronics St Semicon Trans-Tek 2N18478 Inti Device IntlRect IT Semitronics Texas Instr 2N1848 Franel Corp Inti Rectfr IntlRect JA Semicon Com Sensitron

2SH25

Abstract: 2n16718 TIS43 2N6115 diode 2n1775 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 GES2647 2N2646 texas 2N4891 2N4947
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer TexslnstLtd 2N888A Inti Device 2N889 CSR Indus GnrlElee/GE Motorola TAG Semi TexslnstLtd 2N889A Semitronies 2N890 Inti Device TAG Semi 2N891 Inti Device TAG Semi 2N892 Semitronics 2N893 Transitron

2N2147

Abstract: 2N2075 2N2148 2N2160 2N1545 2N1924 2n2222 book TRANSISTOR 2N2222 2N2016 2N2219 transistor
Contextual Info: DIGITRON ELECTRONIC CORP 3LE D • 2045^07 DOOOODM 0 ■ DGE ' 2 ^} ~ 0 \ Page #4 DIQITRON ELECTRONIC CORF 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. J O H N J. SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , CORP ,

21148

Abstract: 2N491 2647 2N2160 2N2420 2N4853 2N4870 2N491B che scr eb20
Contextual Info: SEMICONDUCTORS INC OTE D | fil3bbSG □DDOETl 5 | f 3& Unijunction Transistors WALBERN TYPE “bb INTERBASE RESISTANCE Kil n INTRINSIC STANDOFF RATIO VALLEY CURRENT HIN (MA) 2N489 2N489A 2N489B 4.7-6.8 .51-.62 8 2N490 2N490A 2N490B 2N490C 6.2-9.1 .51-.62

2N2148

Abstract: 2N2148 transistor 2N2147 2n2222 2N1545 2N2160 2N1906 transistor 2N2147 transistor 2n1906 2N1924
Contextual Info: DIGITRON ELECTRONIC CORP 3LE D • 2045^07 DOOOODM 0 ■ DGE ' 2 ^} ~ 0 \ Page #4 DIQITRON ELECTRONIC CORF 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. J O H N J. SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , CORP ,