2N489A Search Results

Contextual Info: SEMICONDUCTORS INC OTE D | fil3bbSG □DDOETl 5 | f 3& Unijunction Transistors WALBERN TYPE “bb INTERBASE RESISTANCE Kil n INTRINSIC STANDOFF RATIO VALLEY CURRENT HIN (MA) 2N489 2N489A 2N489B 4.7-6.8 .51-.62 8 2N490 2N490A 2N490B 2N490C 6.2-9.1 .51-.62

2n491a

Abstract: Helipot 2N469A 2N489A 2N490A MXL-STD-750 2N2417A 2N2418A 2N2422A 2N494A
Contextual Info: MUrS~19500/75B 18 October 1986 SUPERSEDING n / rrra _ t a r nnM * w w w \ j f ««#4 25 October 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, PN, SILICON UNIJUNCTION TYPES 2N489A THROUGH 2N494A. 2N489A THROUGH TX2N404A. 2N2417A THROUGH 2N2422A, AND TX2N2417A THROUGH TX2N2422A

21148

Abstract: 2N491 2647 2N2160 2N2420 2N4853 2N4870 2N491B che scr eb20
Contextual Info: SEMICONDUCTORS INC OTE D | fil3bbSG □DDOETl 5 | f 3& Unijunction Transistors WALBERN TYPE “bb INTERBASE RESISTANCE Kil n INTRINSIC STANDOFF RATIO VALLEY CURRENT HIN (MA) 2N489 2N489A 2N489B 4.7-6.8 .51-.62 8 2N490 2N490A 2N490B 2N490C 6.2-9.1 .51-.62

Contextual Info: nei. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA UNIJUNCTION TRANSISTORS INTRINSIC STANDOFF RATIO INTERBASE RESISTANCE PEAK-POINT CURRENT n rBB IP TYPE 2N489 2N489A 2N489B 2N490 2N490A 2N490B

2N491

Abstract: 2N489 2N490 2N492 TRANSISTOR 2N491 TRANSISTOR 2N492 2N489A s3012 2N493 1n457 texas
Contextual Info: TYPES 2N489 THRU 2N493, 2N489A THRU 2N493A, 2N489B THRU 2N493B P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U LLETIN NO. DL-S 733190, OCTOBER 1 9 6 2 -R E V IS E D M AR C H 1973 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits * Highly Stable Negative Resistance

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

ln393

Abstract: TAG 203 350 PS-120 C231A 2NS505 C230A bj100
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer lB15CL05 lB15Cl10 lB15CL20 lB15CL30 lB15CL40 lB40CL05 lB40CL10 lB40CL20 lB40CL30 lB40CL40 lN3300 lN3300A lN3301 2N490 GnrlElec/GE Texas Inslr Unilex 2N490A

2n2407

Abstract: 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 2N2453 Programmable unijunction
Contextual Info: IN T E X / SE M IT R Ô N IC S CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb Min. Max. 2N2060 2N2060A

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N2646 TO-92

Abstract: 2N3484 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 Ujts 2N2160 ti 2n1671 2N4947 2N2646 2N4870 2n4948
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P* CENTRAL SEMICONDUCTOR bï »EJnfmba aooaaBb ? i l U N IJ U N C T IO N T R A N S IS T O R S (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a w ide tem perature range. These applications include: Pulse Generators, Saw Tooth

2N2213

Abstract: 2N489A d.a.t.a
Contextual Info: UNIJUNCTION TRANSISTORS Item Number Part Number Manufacturer Po Max W Intrinsic Standoff Ratio Min Max Ip Max (A) Iv Max (A) Interbase Resistance Min (Ohms)Max YB2B1 Max (Y) Operating Temperature (Oe) Min Max Package Style PN (N-Type Base), (Cont'd) 5 10

PUT Oscillator

Abstract: Q4015L5 UJT 2N2646 T106, scr 2n2646 SCR TRIGGER PULSE TRANSFORMER L401E3 SCR 2N2646 2n2646 ujt TRIAC SW
Contextual Info:  7ULJJHULQJ DQG *DWH &KDUDFWHULVWLFV RI 7K\ULVWRUV *DWH 7ULJJHU &KDUDFWHULVWLFV 5DWLQJV DQG 0HWKRGV                               7ULJJHULQJ 3URFHVV                                                      

2N489

Abstract: 2N494 2N489A 2N34 TRANSISTOR 2N492 2N491A Germanium power
Contextual Info: Germanium Power Devices Corp Specifications SILICON UNIJUNCTION TRANSISTOR SIÚCON TYPES 2N489.A.B I Silicon Unijunction T ra n ­ sistors are three-term inal devices having a stable “ X ” type negative resistance characteristic over a wide tem perature range. A stable peak point

ln393

Abstract: 2SF102B E0102FB cw12b 2N691 SFOR1B42 2N685AS
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer lB15CL05 lB15Cl10 lB15CL20 lB15CL30 lB15CL40 lB40CL05 lB40CL10 lB40CL20 lB40CL30 lB40CL40 lN3300 lN3300A lN3301 2N490 GnrlElec/GE Texas Inslr Unilex 2N490A

ujt transistor 2n2160

Abstract: 2N4891 EQUIVALENT 2N1671 TRANSISTOR 2N491 2N2840 2N491A 2N2160 TRANSISTOR 2N492 2N2906-7 ujt timer
Contextual Info: CO N VEN TIO N AL UNlJlJNCTIONS General E lectric produces a very broad lin e of standard U JT’s. The TO-5 ceram ic disc bar structure device has been th e workhorse of the unijunction industry for over 10 years. M IL versions are av ailab le on the 2 N 4 8 9 -4 9 4 series.

ujt transistor 2n2160

Abstract: SCR Manual, General electric ujt firing circuits of scr UJT APPLICATION applications of ujt GE SCR Manual applications of ujt with circuits General electric SCR manual UJT 2N491 2N489-94
Contextual Info: CO N VEN TIO N AL UNlJlJNCTIONS General E lectric produces a very broad lin e of standard U JT’s. The TO-5 ceram ic disc bar structure device has been th e workhorse of the unijunction industry for over 10 years. M IL versions are av ailab le on the 2 N 4 8 9 -4 9 4 series.

UJT 2N2646 specification

Abstract: 2N1671 SCR Manual, General electric UJT 2N2646 2N1671B uni junction transistor 2N2646 thyristor scr oscillator circuit GE SCR Manual General electric SCR manual 2N4891
Contextual Info: UNIJUNCTIONS, T R IG G ER S A N D S W IT C H E S Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

2N5431

Abstract: 2N6028A 2N2160 2N2840 7T6027 2N3483 2N4947 2N494A
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P*CENTRAL SE MICONDUCTOR bï » E J n f m b a aooaaBb ? UNIJUNCTION TRANSISTORS (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a wide temperature range. These applications include: Pulse Generators, Saw Tooth

1N93A

Abstract: 2N78A MIL-S-19500 1N1184 1N249B 1N3713 1N4532 1N4148 JANTX 1N4148 JAN 2n526
Contextual Info: SILICON RECTIFIERS MEDIUM CURRENT 20 TO 40 AMPERES JEDEC 1N2488 50B 1N1195A-98A 1N2154-6Q 1N1183-90 1N3765-68 1N5332 1N1183A40A 1N3899-3903 1N3909-13 1N4529-30 GE TYPE 1N3208-14 A40F-M A44F-M ELEC TR IC A L SPECIFICATIO NS I fm av Max. average forward cur­

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered