2N264 Search Results

2n2646 2n2647

Abstract: 2N2646 n2646
Contextual Info: TYPES 2N2646, 2N2647 P-N PIANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 5 9 , M A R C H 1 9 7 3 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF M ILITA R Y AND INDUSTRIAL APPLICATIONS • Planar Process Ensures Low Leakage, Low Drive-Current

2N2647

Contextual Info: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mouser Electronics Related Product Links 610-2N2647 - Central Semiconductor 2N2647

2N2646

Abstract: scr firing scr firing circuit D5J37 2N2646-47
Contextual Info: Silicon D5J37 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. ABSOLUTE MAXIMUM RATINGS: 25°C (Note 1) Pow er D issipation RMS Em itter C urrent Peak Em itter C urrent 300 mw 50 ma 2 amperes 30 volts

2N2646-47

Abstract: D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN
Contextual Info: Silicon Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ra tin g s: 2 5 ° C Pow er D issipation (Note 1) RMS Em itter C urrent 300 mW 50 mA 2Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘

Q2T2905

Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
Contextual Info: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*

2N2919

Abstract: 2N2642
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

2N2646

Abstract: High power SCR 2n2647 SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr"
Contextual Info: 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.

Unijunction transistor 2N2646 of

Abstract: 2N2646P
Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bbSB'lBl DDEfllDM 77b « A P X Philips Semiconductors 2N2646 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E DATA SYM BOL PARAM ETER

transistor 2N2646

Abstract: 2N2646 pin configuration 2n2646 2n2646 pin Transistor 2N2646 PIN 2n2646 package 2N2646 -pin configuration Unijunction transistor 2N2646 of 2N2646 CIRCUIT silicon unijunction transistor
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D bbSBTBl DDEfllOM 77b P h ilip s S em ico n d u cto rs 2N2646 Data sheet status Preliminary specification date of issue December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E D A T A SYM BOL _V eB2

2N4947

Abstract: MU4891 transistors TO-92 case 2N2646 TO-92 2n4948 2n4949 2N241A 2N4871 MU2646 2N264
Contextual Info: IN T R IN S IC S T A N D O F F R A T IO n M IN. r I 2N2417 TYPE 2N 2417A 2N 2417B 2N 2418 2N 2418A 2N 2418B 2N2419 2N241ÔB 2 N2420 2 N2420A 2N 2420B 2N2421 2N 2421A 2N 2421B ! 2N 242 2’ ’ j 2N 2422A • 2N 2422B 2N2646 2N2647 c M A X. 0.51 0.61 0.61 0.51

2n2646

Abstract: 2N2646 to18
Contextual Info: 2N2646 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2646 Availability Online Store

BJ 938

Abstract: 2n2642 TO77
Contextual Info: 2N2642 Si NPN Lo-Pwr BJT 7.50 Transistors Transistors Bipolar Si NP. 1 of 1 Home Part Number: 2N2642 Online Store 2N2642 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N2646

Abstract: unijunction transistor 2N2646 transistor transistor 2N2646 2n2646 package
Contextual Info: 2N2646 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A V o m Ic Pd is s (PULSED) SO V S00 mW @ Te = 25 0C

Contextual Info: 2N2640 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

DUAL TRANSISTORS IN TO77 PACKAGE

Abstract: 2N2222 Metal 2n2222 2n2484 complementary 2N4018 2N3800 2n2484
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUI V. PD (Total) hFE V CEO hFE @ SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484

2n2647

Abstract: transistor 2n2647
Contextual Info: 2N2647 Silicon Unijunction Transistor. 30V - 50mA. 1.29 Thyristors Uni. 1 of 1 Home Part Number: 2N2647 Online Store 2N2647 Diodes Silic o n Unijunc t io n Trans is t o r. 3 0 V - 5 0 m A. Transistors

Contextual Info: 2N264 Si NPN Lo-Pwr BJT 73.75 Transistors Transistors Bipolar Si NP. 1 of 2 Home Part Number: 2N264 Online Store 2N264 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

transistor motorola 2n2646

Abstract: 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 2N2646 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646
Contextual Info: MOTOROLA SC DIODES/OPTO 25E D b3t.7HSS 0000*100 b WÊ7 2N2646 2N2647 PN Unijunction Transistors Silicon PN Unijunction Transistors . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:

transistor 2N2646

Abstract: 2n2646 2n2646 pin Unijunction transistor 2N2646 of 2N2646 PHILIPS 2N2646 pin configuration 2N2646 transistor datasheet 2n2646 package 2N2646 CIRCUIT
Contextual Info: 596 Z8Z. SbE D philips international • 7110a2b 0042bl0 b31 ■ PHIN J - 2 Z-Crt Philips Semiconductors 2N2646 Data sheet status Preliminary specification date of Issue December 1990 Silicon unijunction transistor QUICK REFERENCE DATA PARAMETER SYMBOL CONDITIONS

2N2642

Contextual Info: 2N2642 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N264 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)45 I(C) Max. (A)20m Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)10m

2N3729

Abstract: 2N4072 2N2947 2n4073
Contextual Info: 8134693 SEMICQA_ qp PE | 5 1 3 * ^ 3 ~f _ □□□□13b b | DIFFERENTIAL AND DUAL AMPLIFIERS Cont’d Type NPN 2N3729 2N2453 2N2480 2M2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2453A 2N2919 2N2920 2N2652

2N2646

Abstract: 2N2646-47 scr firing D5J45 2N2646.47 2ampe
Contextual Info: Silicon D5J45 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ratings: 2 5 °C Power Dissipation (Note 1) RMS Emitter Current Peak Emitter Current (Note 2) Emitter Reverse Voltage

2N2646

Abstract: D5J43
Contextual Info: Silicon D5J43 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b s o lu te m axim um ra tin g s : 2 5 ° C (Note 1) 300 m W 50 mA 2 Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘ -6 5 ° C to + 1 5 0 ‘