25N1 Search Results

.25N16

Abstract: 25N160
Contextual Info: High Voltage IGBT VCES = 1600 V IC25 = 75 A VCE sat = 2.5 V IXGH 25N160 IXGT 25N160 For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

25N120

Abstract: 25N120 ixys
Contextual Info: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C

c2555

Abstract: IC IGBT 25N120 25N120
Contextual Info: OIXYS IGBT L o w CES IXGH 25N120 IXGH 25N120A v CE s„ , High speed Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C 1200 V V CGR T ,J = 25° C to 150° C; RrF = 1 MQ Gt 1200 V V GES Continuous +20 V V GEM Transient +30 V ^C25 Tc = 2 5 °C 50 A T c = 9 0 °C

Contextual Info: VCES = 1600 V IC25 = 75 A VCE sat = 2.5 V IXGH 25N160 IXGT 25N160 High Voltage IGBT For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

30n60

Abstract: G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 40n60 25N100 45N10
Contextual Info: Insulated Gate Bipolar Transistors IGBT Insulated Gate Bipolar Transistors (IGBT) "S" series with improved SCSOA capability T ft* w ^0 *c Te . w c max. • ■ ■ ■ I »M m P ggM S i Billi IXSH IXSH IXSH IXSH IXSH IXSH 20N60 30N60 40N60 25N100 45N100

tt 2146 m

Contextual Info: DIXYS IXSH 25N120A IGBT IC25 V CES r Short Circuit SOA Capability Symbol Test C onditions V CES Tj Tj v CQR V 0 ES vQEM CE sat Maximum Ratings = 25°C to 150°C = 25°C to 150°C; RGE= 1 MO Continuous Transient ' cm Tc = 25°C Tc =90°C Tc = 25°C, 1 ms SSOA

30n60

Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Contextual Info: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100

IC IGBT 25N120

Abstract: 25n120 IGBT 25N120 .25N12 25N120D1 FII30-12E 25N120D 25N12
Contextual Info: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C

25N120AU1

Contextual Info: IGBT with Diode IXSH 25N120AU1 VC ES V C E sat SCSOA Capability Sym bol Te st C on d ition s V CES Tj = 25°C to 150°C 1200 V vCGR T, = 2 5 °C to 150°C; R se = 1 M£2 1200 V v vGEM Continuous T ransient ±20 ±30 V V Maximum Ratings 50 25 80 A A A = 50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and

2SN100

Abstract: 25N100
Contextual Info: IGBT IXGH 25N100 IXGH 25N100A L O W V CE S* High speed Maximum Ratings Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V T,J = 25° C to 150° C; FLr bt: = 1 M ft 1000 V v* GES Continuous +20 V VGEM Transient ±30 V ^C25 Tc =25°C 50 A ^C90 T c = 90° C

25N120AU1

Contextual Info: n ix Y S IGBT with Diode IXSH 25N120AU1 •C25 V CES SCSOA Capability CE sat Symbol Test Conditions VcHS T j = 25°C to 150°C 1200 V VC0R T j = 25°C to 150°C; RGE= 1 M il 1200 V v v GEM Continuous Transient U25 ' cm T c = 25°C T c = 90°C T 0 = 25°C, 1 ms

40N60A

Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
Contextual Info: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A

MTH25N10

Abstract: TH25N08 34002 MTH25N08
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M T H 2 5N 0 8 M T H 2 5N 1 0 M TM 25N10 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T M O S P O W ER FETs AMPERES These TMOS Pow er FETs are desig n ed fo r h ig h speed p o w e r

.25N10

Abstract: 25N10 25N10G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 25N10 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 25N10 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and

C15VL

Contextual Info: DIXYS IGBT IXSH 25N100 Low V,CE sat vCES = 1000 V 1025 = 50 V CE(Sa„ = 3.5 V Short Circuit SOA Capability Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V CGR T j = 2 5 °C to 1 5 0 °C ;R GE=1 M ii 1000 V GES Continuous +20 V GEM Transient i3 0

IC IGBT 25N120

Abstract: 25N120 25n120 IGBT IXEH 25N120D1 25N120D 25N120 ixys 25N120D1 FII30-12E
Contextual Info: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C

100N120

Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352
Contextual Info: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50

Contextual Info: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

Contextual Info: TOS HIB A { D I S C R E T E / O P T O } io 9097250 TOSHIBA DISCRETE/OPTO T O S H IB A de l'ìc m a sa 90D SEMICONDUCTOR DD i b i i a i g 16161 D T ~ ? 3 - I3 TOSHIBA GTR MODULE 25N1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS.

Contextual Info: New Products Indicator Square Ultra Bright LED Type M2P Large Square-bodied Indicators. New models added with Ultra LEDs. • New models with ultra bright LEDs added to single-screen models. • Previous models not changed. Line up of models in seven colors (the previous red, orange,

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

kgt25n120kda

Abstract: 25N120KDA kgt25n120 IGBT 2000 25N120
Contextual Info: SEMICONDUCTOR 25N120KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.