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    15N120 Search Results

    15N120 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TRS15N120HB
    Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247 Datasheet
    TW015N120C
    Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247 Datasheet

    15N120 Datasheets (1)

    Others
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    15N120C3
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.25KB 1
    SF Impression Pixel

    15N120 Price and Stock

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    onsemi NGTB15N120FL2WG

    IGBT 1200V 15A SOLAR/UPS
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    Infineon Technologies AG AIGBG15N120S7ATMA1

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    Infineon Technologies AG IHW15N120E1XKSA1

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    Infineon Technologies AG IKCQ15N120CS7XTMA1

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    15N120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original
    15n120co-247o-268 PDF

    15N12

    Abstract: 575 C2
    Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES


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    15n120bo-220abo-26315n12+1575 c2 PDF

    Contextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW


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    15n120bo-247 PDF

    IC IGBT 15N120

    Abstract: 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits
    Contextual Info: IXRP 15N120 IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability IXRP 15N120 C IXRA 15N120 TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector


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    15n120o-220o-263ic igbt 15n120+715n120 igbtixrp 15n120 ixysixra15n120bi-directional switches igbtbi-directional switches" igbtixrp15n120induction heating circuits PDF

    15N120

    Abstract: IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS
    Contextual Info: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C


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    15n120o-22020070703aic igbt 15n120+6bi-directional switches igbtbi-directional switches" igbt15n120 igbtigbt clipigbt for induction heating icixrp 15n120 ixys PDF

    15N120BD1

    Abstract: 15N120 15N120CD1 IXGT15N120BD1
    Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    15n120bd115n120cd1o-247ad15n120+1ixgt15n120bd1 PDF

    IXSH15N120B

    Contextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200


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    15n120bo-247o-26813/1or+1ixsh15n120b PDF

    Contextual Info: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C


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    15n120co-220abo-263728b1 PDF

    Contextual Info: IGBT with Diode IXSH 15N120AU1 ^C25 V CES SCSOA Capability CE sat Symbol Test Conditions V CES T , = 25°C to 150°C 1200 V vCGR T j = 25°C to 150°C; ReE= 1 MQ 1200 V v vGEM C ontinuous T ransient ±20 ±30 V V ^C2S ^C90 ^CM T c = 25°C T c = 90” C T c = 25°C , 1 ms


    OCR Scan
    15n120au1o-247-100/ps PDF

    Contextual Info: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    15n120co-220abo-263o-220 PDF

    RGE 17-18

    Abstract: TO220-4 weight
    Contextual Info: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i


    OCR Scan
    15n120co-220o-263rge 17-18+1to220-4 weight PDF

    15N120

    Contextual Info: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    15n120bd115n120 PDF

    Contextual Info: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM


    OCR Scan
    15n120c PDF

    IC IGBT 15N120

    Abstract: 15n120 "bi-directional switches" IGBT bi-directional switches IGBT
    Contextual Info: IXRH 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability C TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions


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    15n120o-220o-263ic igbt 15n120+2bi-directional switches" igbtbi-directional switches igbt PDF

    001-045

    Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGH 15N120B IXGT 15N120B V CES ^C25 V CE sat ^fi(typ) Maximum Ratings Symbol TestC onditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20


    OCR Scan
    15n120bo-268001-045 PDF

    RGE 17-18

    Abstract: 10i2 TRI 1461
    Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGA 15N120B IXGP 15N120B V CES IC25 V CE sat ^ fi(typ) Symbol T e s tC o n d itio n s V CES ^ = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES V GEM Continuous ±20 V


    OCR Scan
    15n120bt0-220o-263rge 17-18+210i2tri 1461 PDF

    15N120BD1

    Abstract: 15N120CD1 IXGT15N120BD1
    Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    15n120bd115n120cd1o-247ado-268+1ixgt15n120bd1 PDF

    Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 V


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    15n120bo-220o-263 PDF

    15n120

    Contextual Info: IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V IGBT with Reverse Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES


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    15n120o-263ab20110120b PDF

    Contextual Info: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20


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    15n120bo-247o-268o-268aa PDF

    Contextual Info: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V IC25 = 30 A VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20


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    15n120bo-247o-268o-268aa PDF

    Contextual Info: Advanced Technical Information HiPerFASTTM IGBT IXGH 15N120B VCES = 1200 V = 30 A IXGT 15N120B IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20


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    15n120bo-268o-247 PDF

    IC IGBT 15N120

    Abstract: 15n120 H1AA1 "bi-directional switches" IGBT 15n120 igbt
    Contextual Info: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220AB 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES


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    15n120o-220ab20110120bic igbt 15n120+3h1aa1bi-directional switches" igbt15n120 igbt PDF

    IC IGBT 15N120

    Abstract: bi-directional switches IGBT 15n120
    Contextual Info: IXRA 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES


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    15n120o-263ab20110120bic igbt 15n120+1bi-directional switches igbt PDF