2369 TRANSISTOR Search Results

J 2N2369

Abstract: 2N2369
Contextual Info: 2369 HIGH-FREQUENCY SATURATED SWITCH The 2N 2369 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 juA to 100 mA. ABSOLUTE MAXIMUM RATINGS

2369R

Abstract: NTM2369R NTM2369
Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE NTM 2369/NTM 2369R HIGH SPEED SW ITCHING, GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 'M IN I M O LD" DESCRIPTION The N TM 2369, N TM 2369R are NPN transistors, designed fo r general purpose am p lifie r and high speed sw itching applications,

Contextual Info: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481

Contextual Info: Transistor B minil^eel NPN H atin g s mlnlBefif Bui* 500 pcs T yp e N PN G en eral P urpo se 73-2369 MMBT2369 73-8181 BC818-16 73-8182 BC818 25 73-8183 BC818 40 100 pcs 53-2369 53-8181 53-8182 53-8183 VCEO V Ic mA hFE M in-M ax @ lc VCE 15V 500mA 10mA@1V 25V

MPQ2369

Contextual Info: Data Sheet Central Sem iconductor Corp. m _ _ b t m MPQ.2369 NPN S IL IC O N QUAD TRANSISTOR 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 JEDEC T O - 116 CASE Manufacturers of World Class Discrete Semiconductors

Sumida LCD Inverter

Abstract: lenovo 2200bg SERVICE MANUAL crystal washing machine service manual rj45 cable lenovo battery Notebook Computer Lenovo 855GME 2200BG Lenovo smbios lenovo thinkpad feet
Contextual Info: ThinkPad Computer Hardware Maintenance Manual September 2005 This manual supports: ThinkPad X40 Series MT 2369, 2370, 2371, 2372, 2382, 2386 Note Before using this information and the product it supports, be sure to read the general information under “Notices” on page 145.

MD2369

Abstract: MD2369AB MD2369B transistor k84 MD2369A MD2369AF MD2369BF MD2369F MQ2369
Contextual Info: M D 2 3 6 9 , A , B s il ic o n M D 2 3 6 9 F , A F , BF M Q 2369 M ULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose switches and am plifiers, fro n t end detectors, and temperature com­

2222 NPN

Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905

2369

Abstract: T018 T072 PN2368 NKT13329 13429 16229
Contextual Info: NPN Silicon Transistors N P N S ilic o n Planar T ransistors fo r high speed sw itching and high fre q u e n cy use Type M a x im u m ratings Case BSY 95A T018 T018 T018 T018 N K T 13329 N K T 13429 N K T 16229 PN 918 PN 2368 PN 2369 T018 T018 T072 Plastic T 0 1 8

2N 2222 A NPN, TO-18

Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
Contextual Info: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A

TT 2222 npn

Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
Contextual Info: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904

2044B

Abstract: 2SD1817 EN2369A
Contextual Info: Ordering number:EN2369A NPN Epitaxial Planar Silicon Transistor 2SD1817 Driver Applications unit:mm 2045B Features [2SD1817] 6.5 5.0 • High DC current gain. · Small and slim package permitting the 2SD1817applied sets to be made more compact. 2.3 0.5 4 5.5

BC-337 B 011

Abstract: BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent
Contextual Info: A C T IV E COMPONENTS FOR H Y B R ID CIRCU ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES ê CB-166 SOT-23 Silicon NPN transistors, switching and general purpose Marl ing Mart,tuage Type Type N R . Pin conf. Brochage Transistors NPN silicium, usage générai et commutation

bc 301 transistor

Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP

IC 4047

Abstract: N2219 ic 4046 bsw830 BSW82 N 2222 N2222A BSW83 2N3301 2N3302
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 5C 0mA) in TO-18 and TO-39 (~ T O - 5 ) metal cases for high speed switching Type Characteristics @ Tam b= 25°C Maximum Ratings f" l„ Tam b— ff 2 5 °C Tease— V CE = 10 V = 10 mA

TRANSISTOR BC 313

Abstract: npn 2222 transistor transistor 2n 2222 2907 TRANSISTOR PNP NPN 2904 BSW21 2n 2222 transistor bc 107 transistor BCY 107 2907 pnp transistor
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r M ETAL-CASE/ BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC EO ^ \^ PNP PNP

te 2221

Abstract: 2907 TE2221 marking A2N TE2221A 2221 npn 2222 222-1 a 2907 TE930
Contextual Info: A C T IV E C O M PO N EN TS FOR H Y B R ID C IR C U IT S C O M PO SAN TS A C T IF S P O U R C IR C U IT S H Y B R ID E S CB-145 TM -3 Silicon NPN transistors, switching and general purpose Transistors N P N silicium, usage généra! e t com m utation V CBO

NTM2369

Contextual Info: SILICON TRANSISTOR NTM2369 HIGH SPEED SW ITC H IN G . GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD D E S C R IP T IO N T he N T M 2 3 6 9 is N P N transistor, designed for general purpose am plifier and high speed sw itching applications for h yb rid 1C.

2SC2369

Abstract: C2369 2369 transistor N 75 z
Contextual Info: NEC SILICON TRANSISTOR BECTHOH DEVICE 2SC2369 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DIMENSIONS in millimeters {inches} NF MAG 1 .5 d B TYP. > f = 1 .0 G H z 1 4d B TYP. i f = 1 .0 G H z ABSOLUTE M AXIM UM RATINGS Ta = 25°C

TRANSISTOR BC 313

Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V

MMT2369

Abstract: MMT2857 MMCM2369 MMCM2484 MMCM2857 MMCM930
Contextual Info: MMCM2369 silicon MMT2369 MICRO-T NPN SILICON ANNULAR NPN SILICON SWITCHING TRANSISTORS TRANSISTORS . . .desig ned f o r high-speed, lo w c u rre n t s w itc h in g a p p lic a tio n s where h igh-density packaging is required. • Space Saving M ic r o m in ia tu r e Packages

bc 107 transistor

Abstract: transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF M ETAL-CASE/ BOITIER M E T A L Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC E O ^ \^ PNP

BTA18

Abstract: MMBT pnp BT5771 SOT23 M
Contextual Info: Fairchild Semiconductor Qjscrete pQwer an j SjQna| JeChnOlOQieS Selection Guides Surface Mount Bipolar Transistors (continued Low Noise Amplifiers Part Number NF (dB) M ax BV Min Mm T *» *6 nA Package V20S ÛI SOT-23 m 10 SOT-23 1 SOT-23 NMi M M B T 5089

Contextual Info: ACTIVE COM PONENTS FO R HYBRID CIRC U ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES Silicon IMPN tran sisto rs, low noise chip Transistors NPN silicium, faible bruit (pastille) Type Typ.9 VCBO (V) VCEO (V) h21E 'c ' (mA) *C V CE (V) (mA) F (dB) min - max