2305 TRANSISTOR Search Results

Contextual Info: PRODUCT SUMMARY SKY77778-51 Power Amplifier Module for LTE FDD Band 7 2500–2570 MHz , Band 30 (2305–2315 MHz); LTE TDD Bands 38/41 (2496–2690 MHz), Band 40 (2300–2400 MHz); AXGP Band (2545–2575 MHz) Applications Description • Long-Term Evolution (LTE)

2N3904

Abstract: 2N3906 MAX6654 MAX6680 MAX6680MEE MAX6681 MAX6681MEE
Contextual Info: 19-2305; Rev 0; 4/02 ±1°C Fail-Safe Remote/Local Temperature Sensors with SMBus Interface The MAX6680/MAX6681 include pin-programmable default temperature thresholds for the OVERT output, which provides fail-safe clock throttling or system shutdown. In addition, the devices are pin programmable to

sky77814

Contextual Info: PRODUCT SUMMARY SKY77814-11 Power Amplifier Module for LTE FDD Band 7 2500–2570 MHz and Band 30 (2305–2315 MHz) and LTE TDD Bands 38/41 (2496–2690 MHz), Band 40 (2300–2400 MHz) and AXGP Band (2545–2575 MHz) Applications Description • Long-Term Evolution (LTE)

MAX6681

Abstract: MAX6681MEE 2N3904 2N3906 MAX6654 MAX6680 MAX6680MEE
Contextual Info: 19-2305; Rev 1; 1/05 ±1°C Fail-Safe Remote/Local Temperature Sensors with SMBus Interface The MAX6680/MAX6681 are precise, two-channel digital thermometers. Each accurately measures the temperature of its own die and one remote PN junction and reports the temperature on a 2-wire serial interface. The

5082-2815

Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
Contextual Info: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*

2395 transistor

Contextual Info: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 2 — 24 February 2014 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

2395 transistor

Contextual Info: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 2 — 28 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

2305 transistor

Contextual Info: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 3 — 12 May 2014 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

STK4192II

Abstract: STK4101 stk4192 STK4192 2 transistor ac 149 10w power STK4192-II EN2305C
Contextual Info: Ordering number: EN2305C Thick Film Hybrid IC STK4192II AF Power Amplifier Split Power Supply (50W + 50W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4192II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.

1N5497

Abstract: SDT3775 SDT3714 SDT3715 SDT3716 SDT3717 SDT3718 SDT3719 SDT3720 SDT3721
Contextual Info: 29 SILICON POWER TRANSISTORS CUF! R EfsIT GAIN SATURATIOP si V O LTA G ES @ TYPE NUMBER CASE TYPE VCBO V 5 AMP SILICON PNP VCEO V EBO I V I V O b se rve - 80 80 40 40 40 40 hFE MIN. I MAX. M egative P o la r ity 6.0 20 6.0 20 6.0 12 SDT3714 SDT3715 SDT3716

NTE2314

Abstract: NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain b v CEO BVEBo h pE Pd 't 31a •c 0.05 BV cbo

MRF8S23120HR3

Abstract: AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to

PIMD3

Abstract: npT1007 TRANSISTOR J15
Contextual Info: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature

Contextual Info: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

V54C128

Contextual Info: gr VITELIC f V54C128 FAMILY HIGH PERFORMANCE, 128K x 8 BIT, PSEUDOSTA TIC, CMOS RAM ADVANCED 80/80L 10/10L 12/12L CE Access Time, tCEA 80 ns 100 ns 120 ns OE Access Time, (tQEA) 35 ns 40 ns 50 ns Min. Read-Write Cycle Time, (tRC) 130 ns 160 ns 190 ns HIGH PERFORMANCE V54C128

NPT100

Contextual Info: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance

Contextual Info: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in

PIMD3

Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

t 3866 power transistor

Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
Contextual Info: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -

Contextual Info: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in

NPT1012

Abstract: NPT1012B AC200BM-F2 AC200B
Contextual Info: NPT1012 Preliminary Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 20-25W P3dB CW power from 1000-2500MHz in

PIMD3

Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power