200CYCLES Search Results

E3235

Contextual Info: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM

3329S

Contextual Info: DB LECTRO Inc. 6.8x4.7 Circularity/ Single Turn /Trimming Potentiometer - 3329S -.Install dimension. Electrical Characteristics Standard Resistance Range.50Ω～ 2MΩ Resistance Tolerance.±10%

3386P103

Abstract: 3386-P-103 3386p
Contextual Info: DB LECTRO Inc. 9.6x9.6 Square/ Single Turn /Trimming Potentiometer - 3386P- .Install dimension. .Mutual dimension. Electrical Characteristics Standard Resistance Range.50Ω～2MΩ

GDDR

Abstract: K4D553238E-JC33 k4d553238e-jc40
Contextual Info: 256M GDDR SDRAM K4D553238E-JC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.3 August 2003 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: DB LECTRO Inc. 9.6x9.6 Square/ Single Turn /Trimming Potentiometer - 3386C-.Install dimension. .Mutual dimension. Electrical Characteristics Standard Resistance Range.50Ω～2MΩ

Contextual Info: DB LECTRO Inc. 7x7.2 Square/Single Turn/Trimming Potentiometer - 3362W- .Install dimension. .Mutual dimension. Electrical Characteristics Standard Resistance Range.50Ω～2MΩ Resistance Tolerance.±10%

cc 052

Contextual Info: TO SH IBA THMD51E30B70,75,80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59SM803BFT DRAMs and PLL/Registers on a printed circuit board.

IS43R32800

Abstract: 43R32800
Contextual Info: IS43R32800 8Mx32 256Mb DDR Synchronous DRAM FEATURES • Vdd/Vddq=2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK)

NT5DS4M32EF-25

Abstract: NT5DS4M32EF-28 NT5DS4M32EF-33 NT5DS4M32EF-4
Contextual Info: NT5DS4M32EF 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.

FI-X30SSL-HF

Abstract: wy 636 transistor lg philips LCD panel 17" Connector 30pin lcd lg FI-X30ssl LC230WX3 LG 32" TV lcd power supply S14B-PH-SM3 LG LCD POWER SUPPLY connector 30 pins LCD LG Philips
Contextual Info: LC230WX3 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL Preliminary Specification ( ● ) Final Specification Title BUYER 23.0” WXGA TFT LCD SUPPLIER General MODEL LG.Philips LCD Co., Ltd. *MODEL LC230WX3 SUFFIX SLA1 *When you obtain standard approval,

TSR3329

Contextual Info: Suntan TSR-3329 CIRCULARITY TRIMMING POTENTIOMETER „ „ Electrical Characteristic Single Turn / Cermet / Industrial / Sealed 3 Terminal Styles Common Dimensions How To Order 50Ω-2MΩ Standard Resistance Range ±10% Resistance Tolerance Absolute Minimum Resistance

TSR-3362

Contextual Info: Suntan TSR-3362 SQUARE TRIMMING „ „ Electrical Characteristic POTENTIOMETER Single Turn / Cermet / Industrial / Sealed 7 Terminal Styles Common Dimensions How To Order 50Ω-2MΩ Standard Resistance Range ±10% Resistance Tolerance Absolute Minimum Resistance

3006p suntan

Abstract: 3006P 203 3006P 103 TSR-3006P 3006p 104 3006P 3006P 102 3006P 502
Contextual Info: Suntan T S R - 3 0 0 6 R E C TA N G U L A R T R I M M I N G P O T E N T I O M E T E R „ „ Electrical Characteristic Multiturn / Cermet / Industrial / Sealed Wide Range Of Resistance Common Dimensions How To Order 50Ω-2MΩ Standard Resistance Range ±10%

MARKING UAB

Contextual Info: Suntan TSR-3323 SQUARE TRIMMING „ „ Electrical Characteristic POTENTIOMETER Single Turn / Cermet / Industrial / Sealed 4 Terminal Styles Common Dimensions How To Order 50Ω-2MΩ Standard Resistance Range ±10% Resistance Tolerance Absolute Minimum Resistance

1000H

Abstract: ET3362
Contextual Info: ET3362 Cermet Trimming Potentiometer Features: How to order: ELECSOUND Standard Resistance Table: Resistance Resistance Ohms Code Square/Single-Turn/ Cermet/ Industrial/ Sealed 10 Terminal Styles Rohs Compliant Electrical Characteristics Standard Resistance Range: 10Ω - 2MΩ

DD 127 D

Contextual Info: TOSHIBA THMD12N11 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.

ET3006

Abstract: 200-201 1000H tube el 503 el 502
Contextual Info: ET3006 Cermet Trimming Potentiometer Features: ELECSOUND How to order: Standard Resistance Table: Resistance Resistance Ohms Code Rectangular/Multiturn/ Cermet/ Industrial/ Sealed 3 Terminal Styles Rohs Compliant 10 20 100 200 50 100 200 500 1000 2000

Contextual Info: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.

Contextual Info: TOSHIBA THMD51E30B70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59WM803BFT DRAMs and PLL/Registers on a printed circuit board.

AN 7580

Abstract: TC59WM815BFT
Contextual Info: TOSHIBA THMD12E11 B70#75#80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12E11B is a 16,777,216-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 5 TC59WM815BFT DRAMs on a printed circuit board.

DQSO

Abstract: TC59WM807BFT
Contextual Info: TOSHIBA THMD25N11B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25N11B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM807BFT DRAMs on a printed circuit board.

Contextual Info: Target Spec 128M DDR SDRAM K4D263238E-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 0.2 January 2003 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 1.2 January 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: Primarily 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 0.1 Sep 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,