DQSO Search Results

Contextual Info: HA RR IS SEÎ1IC0N» S E C T O R bflE D • M30 E 27 1 DQSOEEfi Ô4T ■ ¡ H A S HGTG30N120D2 30A, 1200V N-Channel IGBT D ecember 1993 Features Package JEDEC STYLE TO-247 TOP VIE!N • 30 A m p 1200 V olt • L a tch Free O p e ra tio n _ EMITTER • T y p ic a l Fall T im e - 580ns

lm814

Abstract: ID32-001
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

Contextual Info: 184PIN DDR333 Unbuffered DIMM 1024MB With 64Mx8 CL2.5 TS128MLD64V3J Description Placement The TS128MLD64V3J is a 64Mx64bits Double Data Rate SDRAM high-density Module for DDR333. The TS128MLD64V3J consists of 16pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil

M368L1624DTL

Contextual Info: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History

DDR266

Contextual Info: DDR SDRAM stacked 1Gb B-die x4/x8 DDR SDRAM Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.1 Rev. 1.1 August. 2003 DDR SDRAM stacked 1Gb B-die (x4/x8) DDR SDRAM st. 1Gb B-die Revision History Revision 0.0 (May, 2003) - First version for internal review.

DDR400

Abstract: K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC
Contextual Info: 256MB, 512MB, 1GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module DDR400 Module 60FBGA 184pin Registered Module based on 256Mb E-die (x4, x8) with 1,200mil Height Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB, 1GB Registered DIMM DDR SDRAM

DDR200

Abstract: DDR266A DDR266B M312L2923MT0
Contextual Info: M312L2923MT0 184pin 1U Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72(64Mx72*2 bank based on 64Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 Jan. 2002 Rev. 0.2 Jan. 2002 M312L2923MT0 184pin 1U Registered DDR SDRAM MODULE

K4H560838E

Abstract: DDR333
Contextual Info: 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 April, 2003

Contextual Info: M470L6423DN0 200pin DDR SDRAM SODIMM 512MB DDR SDRAM MODULE 64Mx64 based on sTSOP 32Mx8 DDR SDRAM 200pin SODIMM 64bit Non-ECC/Parity Revision 0.0 May 2002 Rev. 0.0 May 2002 M470L6423DN0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (May 2002) - First release.

Contextual Info: M381L6423DTL 184pin Unbuffered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Unbuffered 184pin DIMM 72-bit ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M381L6423DTL 184pin Unbuffered DDR SDRAM MODULE Revision History

M368L6523DUS

Abstract: L2923D
Contextual Info: 256MB, 512MB, 1GB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

k4h561638f

Abstract: DDR266 DDR333 ECC SODIMM
Contextual Info: DDR SDRAM 128MB, 256MB SODIMM DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 256Mb F-die 64 / 72-bit Non ECC / ECC Revision 1.1 August, 2003 Rev. 1.1 August 2003 128MB, 256MB SODIMM DDR SDRAM Revision History Revision 1.0 (June 2003) - First release

K4H511638B-TCCC

Abstract: K4H510838B-TCCC DDR333 DDR400 K4H511638B-T
Contextual Info: DDR SDRAM 512Mb B-die x8, x16 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification Revision 1.0 Rev. 1.0 June 2003 DDR SDRAM 512Mb B-die (x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (May, 2003) - First release Revision 1.0 (June 2003) - Updated DC Characteristics

Contextual Info: M383L6423DTS 184pin Registered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M383L6423DTS 184pin Registered DDR SDRAM MODULE Revision History

ddr266

Contextual Info: DDR SDRAM 512Mb B-die x4, x8, x16 DDR SDRAM 512Mb B-die DDR SDRAM Specification Revision 1.1 Rev. 1.1 August 2003 DDR SDRAM 512Mb B-die (x4, x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003) - First version for internal review

Contextual Info: 168-PIN DIMMS STI728107D2l-xxVG 8M X 72 Bit DRAM DIMM with EDO Mode and ECC FEATURES GENERAL DESCRIPTION • The Simple Technology STI728107D2l-xxVG is a 8M x 72 bit Dynamic RAM high density memory module. The module consists of thirty-six 4M x 4 bit DRAMs in 24-pin TS OP packages.

Contextual Info: STI721005D1 -xxVG 168-PIN DIMMS 1M X 72 Bit DRAM DIMM with FPM and ECC Optimized FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC *RC *PC STI.-60VG 60ns 20ns 110ns 40ns STI.-70VG 70ns 25ns 130ns 45ns The Simple Technology STI721005D1-xxVG is a 1M x 72 bit

Contextual Info: STI648100G1 -xxVG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI648100G1 is a 8M x 6^- bits Dynamic RAM high density memory module. The Simple Technology STI648100G1 consist of eight CMOS 8M x 8 bits DRAMs in 32pin TSOP packages, and one 256 bits x 8 bits serial EEPROM

DDR333

Abstract: DDR400 K4H281638E-TCCC
Contextual Info: DDR SDRAM 128Mb E-die x8, x16 DDR SDRAM 128Mb E-die DDR400 SDRAM Specification Revision 1.3 Rev. 1.3. September. 2003 DDR SDRAM 128Mb E-die (x8, x16) DDR SDRAM 128Mb E-die Revision History Revision 1.0 (February, 2003) - First release Revision 1.1 (February, 2003)

256mb ddr333 200 pin

Abstract: DDR266 DDR266A DDR266B DDR333 K4H560438D-GC K4H561638D
Contextual Info: 256Mb DDR SDRAM Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition

DDR200

Abstract: DDR266A DDR266B
Contextual Info: M381L2923MTL 184pin Unbuffered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72(64Mx72*2 bank based on 64Mx8 DDR SDRAM) Unbuffered 184pin DIMM 72-bit ECC/Parity Revision 0.3 May. 2002 Rev. 0.3 May. 2002 M381L2923MTL 184pin Unbuffered DDR SDRAM MODULE Revision History

Contextual Info: 168-PIN DIMMS STI7216107D1-60VG 16M X 72 Bit DRAM DIMM with EDO and ECC Optimized FEATURES GENERAL DESCRIPTION • The Simple Technology STI7216107D1-60VG is an 16M x 72 bit Dynamic RAM high density memory module. The module consists of eighteen 16M x 4 bit DRAMs in 400-mil 34-pin

NY11111

Contextual Info: STI641000AD1 168-PIN DIMMS 1M X 64 DRAM DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI641000AD1 is a 1M bit x 64 Dynamic RAM high density memory module. The Simple Technology STI641000AD1 consists of four CMOS 1M x 16 bit DRAMs in

Contextual Info: STI648004G1 -60VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC ^RC ^HPC 60ns 15ns 104ns 25ns The Simple Technology STI648004G1-60VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple