1S50 Search Results

PD9555

Abstract: LS 1316 2N7219 555C IRFM240 2N7219 JANTX 2N721
Contextual Info: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM 240 SN7S19 JANTXSN7S19 JANTXVSN7S19 [REF: MIL-S-1S500/596] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET11 technology ¡s the key to International

F1S50N06

Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N
Contextual Info: l i H A R R RFG50N06, RFP50N06, 1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model

2N7236 JANTX

Abstract: 2N7236 mosfet K 1377
Contextual Info: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM914Q 2N 7236 JANS2N7236 JANTX2N7236 JANTXV2N7236 [REF: M IL-S-1S500/5S5] -100 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

1B40K20

Abstract: 1B40K10 1B10J10 1B40K05 1B20K05 1B40K40 1B20K40 1B100M05 1B05J40 1B10J20
Contextual Info: Diodes and Rectifiers W Max. Pow er D issipation (Volts) Norn. Volts ± 1 0 % at 50m A (H ) Slo p e Im pedance at 50m A + (%/°C) Typ. Temp. Coefficient S P E C IA L FEATURES Type No. C ase D raw ing No. C lip p e r 1S5015C S010 DD 10 15 5 0-08 V o lta g e

HEXFETs FETs

Abstract: I-242 I-239 160 P2 0 075A 5V 2N7335 IRFG110 IRFG9110 JANTXV2N7335 fg91
Contextual Info: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER I R HEXFET TRANSISTORS 4PCHANNEL POWER MOSFETb 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE -100 Volt, 1.4 Ohm (P-Channel) IRFG9HO 2N 7335 JANTXSN7335 JANTXVSN7335 [REF: MIL-S-1S500/59S] Product Summary

2N7336

Abstract: JANTXV2N7336 tp 26c 436D IRFG6110 JANTX2N7336 irfgg110
Contextual Info: Data Sheet No. PD-9.436D I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG6110 SIVI7336 JA N TX 2N 7336 JA N TX V S N 7336 COMBINATION N AND P CHANNEL [S EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: MIL-S-1S500/59S]

er507

Abstract: 5030c sf16 SR1635C ER1602C sr52
Contextual Info: QUICK REFERENCE TABLE FOR SWITCHING RECTIFIERS SCHOTTKY BARRIER RECTIFIERS V \ j y p e n 5 :— lo |A l\ 20 30 35 40 45 50 60 C A SE _ 1.0 1N17 1N18 - 1N19 - - 1.0 1S20 1S30 - 1S40 - 1S50 1S 60 1.0 1N5817 1N5818 - 1N5819 - - - 1.0 SR120 SR 1 30 S R I 40

1NS819

Abstract: J 6820 1N5B18 1n6817 SR1635C SR360
Contextual Info: SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE TO 5 0 AMPERES 2 0 VOLTS TO 6 0 VOLTS ’' N T — \ 1o Al (V 40 35 30 1.0 IN 17 1N18 - 1N19 - - - R-1 1.0 1S20 1S30 - 1S40 - 1S50 1S60 R-1 SR150 SR160 00-41 1.0 1N6817 1N5B18 1NS819 1.0 SR I 20 SR130 SRI 40 45 50 20

IR LFN

Abstract: LFN ir D0113 CJ10L 2N7225 IRFM250 2N7225 JANTX 024-S
Contextual Info: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM250 SN7SS5 JANTX2N7225 JANTXV2N72S5 N-CHANNEL REF: MIL-S-1S500/5B&] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International

i354

Abstract: 2N7222 IRFM440 IRFM440D i-354
Contextual Info: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER I& R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM440 SN7SSS JANTX2N7222 JANTXV2N7222 N-CHANNEL [REF: MIL-S-1S500/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International

2N7237

Abstract: ely transformers IRFM9240 JANTXV2N7237 IRFM9S40
Contextual Info: Data Sheet No. PD-9.497D INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRPM9B4Q SN7S37 JANS2N7237 JANTX2N7237 JANTXV2N7237 [REF: MIL-S-1S500/5S5] -200 Volt, 0.51 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

104 esm

Abstract: a101g B1510 MB35 BR1010 232 1N540 n5406 ESM 504 100 A104G RL1N4004
Contextual Info: QUICK REFERENCE TABLE FOR SWITCHING RECTIFIERS SCHOTTKY BARRIER RECTIFIERS ^ ''- ~ - ~ ^ £ R O V V n ^ Y P E N Ö T “^ . lo ( A | \ 20 30 35 1.0 1N17 1 N18 1.0 1 S2 0 1S30 1.0 1N 5817 1N 5818 1.0 SR120 SR130 40 45 50 60 1N19 - - 1S40 - 1S50 1S60 1 N 5 81 9

Contextual Info: 1S5016C Diodes Double-Anode Reference/Regulator Diode V Z Nom.(V) Reference Voltage16 @I(Z) (A) (Test Condition)50m Tolerance (%)10 P(D) Max. (W)10 Z(z) Max. (ê) Dyn. Imped.5.0 Temp Coef pp/10k8.0 Maximum Operating Temp (øC)150# Package StyleDO-4 Mounting StyleT

7901

Abstract: 2N7222 IQR 2400 IRFM440 IRFM440D
Contextual Info: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED TRANSISTOR N-CHANNEL IRFM440 SN7SSS JANTXSN7SSS JA NTXV2N7222 [REF: MIL-S-1S500/S9B] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET technology is the key to International

DIODE S6 73

Contextual Info: Formosa MS Schottky Barrier Rectifier 1S20 THRU 1S60 List List. 1 Package outline. 2

PASB

Abstract: ec ubt 4.8 t LVTH182502A LVTH18502A SN54LVTH182502A SN54LVTH18502A SN74LVTH182502A SN74LVTH18502A
Contextual Info: SN54LVTH18502A, SN54LVTH182502A, SN74LVTH18502A, SN74LVTH182502A 3.3-V ABT SCAN TEST DEVICES WITH 18-BIT UNIVERSAL BUS TRANSCEIVERS S C B S 6 6 8 A -JULY 1 9 9 6 - REVISED DECEMBER 1996 Members of the Texas Instruments SCOPE Family of Testability Products

1S20

Contextual Info: 1S20 THRU 1SA0 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES R-1 The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency

1S20

Abstract: 1S30 1S40 1S50 1S60
Contextual Info: 3 D T 1 S 20 TH R U 1S60 Voltage Range 20 to 60 Volts Current 1.0 Amperes 1.0 AMP. SCHOTTKY BARRIER RECTIFIERS R -1 Features • Plastic material used carries Underwriters Laboratory Classification 94V-0 • Metal sillicon junction.majority carrier condjuction

Contextual Info: MCC 1S20 THRU 1SA0
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low power loss, high efficiency

1S20

Abstract: 1S30 1S40 1S50 1S60
Contextual Info: 1S20 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1S60 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching

1S444

Abstract: 1S446 SCR 25 amps PIV 600 1S442 3B60L60 1S441 3B30L40 GRM21BR71A106KE51L 1s434 3B0L60
Contextual Info: Diodes and Rectifiers Type C ase No. A m p s (V o lts ) (A m p s ) (H A ) □ ra w in g A v e ra g e R ectifie d C re s t W o rk in g S in g le C ycle R everse Leakage S P E C IA L N o. F o rw ard C u rre n t V o lta g e (P .I.V .) S u rg e a t P .I.V . a t 25°C

M39029/88

Abstract: Radial arinc 620 601 033 M39029 pin crimp Coaxial Reducing sleeve, AWG 16-20 M39029/connector cross reference
Contextual Info: AS39029 QPL and Glenair Commercial High-Performance Connector Contacts United States  United Kingdom  Germany  France  Nordic First Edition • January 2011  Italy  Spain  Japan Aircraft On Ground? Need Contacts Now? AS39029 In Stock Specials Too!

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

uPD16407

Abstract: 746376 1SS168
Contextual Info: 'MON • i Û. i ; ' NEC ¡ ':,I-IJ-11 1 - c DATA SHEET / MOS INTEGRATED CIRCUIT uPD16407 160-OUTPUT TFT-LCD SOURCE DRIVER DESCRIPTION The/iPD16407 ¡s a source d riv e rfo r a T F T liquid-crystal p an e l.Th e Interna! configuration co m p rise s 8 sh ift register