1S20 Search Results

1S2095

Abstract: 09308
Contextual Info: TOSHIBA { DI SC RE TE/OPTO} 9097250 TOSHIBA t? <DISCRETE/OPTO _ SiliGbn Epitaxial Planar T y p e / »^^0^7250 □ OO'iBOñ 4 | 67C n T ~ o 3- o?m 09308 1S2095A Diode Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. CORE DRIVE APPLICATIONS. FEATURES: .

Contextual Info: TOSHIBA {DIS CR ET E/OPT O} 9097250 TOSHIBA <D I S C R E T E / O P T O Silicon Epitaxial Planar Type Variable Capacitance Diode 6 7 r. 0 3 3 0 6 n r ~ o 7-/9 1S2094 UHF, VHF AFC APPLICATIONS. Unit in mm ELECTRICAL CHARACTERISTICS Ta=25°C) CHARACTERISTIC

DIODE S6 73

Contextual Info: Formosa MS Schottky Barrier Rectifier 1S20 THRU 1S60 List List. 1 Package outline. 2

Contextual Info: 1S2075 K Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-144A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.5pF max) • Short reverse recovery time. (trr = 8.0ns max) • High reliability with glass seal. Ordering Information

1S2076 equivalent

Abstract: 1S2076 DSA003640
Contextual Info: 1S2076 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-145B Z Rev.2 Oct. 2000 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal. Ordering Information Type No.

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THMS12 1S20Z-25, -35 ¡DESCRIPTION] The THMS121620Z is a 16,384 words by 12 bits static RAM module constructed on a double sided PC board using three TC55417J 16Kx4 static RAMs in SOJ packages. The THMS121620Z is offered in a 40 pin 500 mil zip module suitable for

1S2075

Abstract: Hitachi DSA0045
Contextual Info: 1S2075 K Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-144C (Z) Rev.3 Dec. 2000 Features • Low capacitance. (C = 3.5 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal. Ordering Information

1S20

Contextual Info: 1S20 THRU 1SA0 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES R-1 The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency

1S20

Abstract: Hitachi DSA001653
Contextual Info: 1S2075 K Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-144A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.5pF max) • Short reverse recovery time. (trr = 8.0ns max) • High reliability with glass seal. Ordering Information

Hitachi DSA001653

Contextual Info: 1S2074 H Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-142A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 4.0ns max) • High reliability with glass seal. Ordering Information

1S553T

Abstract: 1SV54 1S553T-HP 1SV56 60Ghz 1S1923 1S1924 1S361 1S362 1S363
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

Contextual Info: MCC 1S20 THRU 1SA0
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low power loss, high efficiency

1S20

Abstract: 1S30 1S40 1S50 1S60
Contextual Info: 1S20 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1S60 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching

Hitachi DSA00346

Abstract: 1S2074
Contextual Info: 1S2074 H Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-142A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 4.0ns max) • High reliability with glass seal. Ordering Information

1S2588

Abstract: 1s2222 ISS83 is2471 1S2473 is2076a 1S2348 IS2473 1S2075 1S2076A
Contextual Info: - 150 - 1S2075 K 1S2076 1S2076A 1S 2091 1S2092 1S2095A 1S2134 1S2134 1S2135 1S2135 1S2212 1S2222 1S2348 1S2460 1S2461 1S2462 1S2463 1S2471 1S 2472 1S2473 1S2588 1S2588 1S 2787 1S 2835 1S 2836 1S 2637 1S2838 1S2880 1SR11—1200 1SRU -1500 1SS41 1SS53 1SS54

IN751a

Abstract: IN753a in752a in750A IN759A IN749A in758a IN755A IN757A IN756a
Contextual Info: Diodes and Rectifiers C ase Drawing No. mW Max. Pow er D issipa tion at 25°C (Volts) Norn. V oltage ±5% at 5m A (O ) Max. S lo p e Imp. at 5m A (%/"C) Typ. Temp. Coef. at 5m A 1S2030A S07 BB 400 30 200 -0 0 7 1S2033A S07 BB 400 3-3 120 -0 0 7 1S2036A

1S2076

Abstract: 1S2076 DIODE DO-35 BLUE CATHODE Hitachi DSA002788
Contextual Info: 1S2076 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-145A Z Rev. 1 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 8.0ns max) • High reliability with glass seal. Ordering Information

Contextual Info: 1S2069 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage8.5 @I(Z) (A) (Test Condition)10m Tolerance (%)6 P(D) Max. (W)250m Z(z) Max. (ê) Dyn. Imped.20 Temp Coef pp/10k200m Maximum Operating Temp (øC)150õ

Contextual Info: MCC TM Micro Commercial Components Features • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 • • • • • 1S20 THRU 1SA0
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#

Contextual Info: 1S20 WILLAS THRU 1S60 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching High surge capabitity High reliability

Contextual Info: 1S2074 H Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0557-0300 (Previous: ADE-208-142B) Rev.3.00 Mar 16, 2005 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 4.0 ns max) • High reliability with glass seal.

1s2076

Abstract: 1S2076 equivalent 1S2076 DIODE DO-35 BLUE CATHODE Hitachi DSA0014
Contextual Info: ADE-208-145A Z 1S2076 Silicon Epitaxial Planar Diode for Various Detector,Modulator,Demodulator Rev. 1 Aug. 1995 Features Outline • Low capacitance. (C=3.0pF max) • Short reverse recovery time. (trr =8.0ns max) • High reliability with glass seal. 2

1S401

Abstract: 1S20 1S30 1S40 1S50 1S60 s6 schottky
Contextual Info: 1S20 THRU 1S60 1.0 AMP SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction R-1 .102 2.6 .091(2.3)

Contextual Info: 1S20-1S100 Schottky Barrier Rectifiers VOLTAGE RANGE: 20 - 100 V CURRENT: 1.0 A Features ◇ ◇ ◇ ◇ ◇ xxxx ◇ R-1 Low switcing noise Low forward voltage drop High current capability High switching capability High surge capability High reliability