RFP50N06
Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
|
Original
|
rfg50n06rfp50n06rf1s50n06sm175oc |
PDF
|
F1S50N06
Abstract: RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0
Contextual Info: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Semiconductor 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
|
Original
|
rfg50n06rfp50n06rf1s50n06rf1s50n06sm+12175oc98e-135e-483e-642e-91e-30f1s50n06rf1s50n06sm9atb334ta4901850a60vrfp50n0
|
PDF
|
TA49018
Abstract: RFP50N06 50A60V f1s50n06
Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM in te rd i J u ly 1999 D nta S h e e t F ile N u m b e r Features 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
|
OCR Scan
|
rfg50n06rfp50n06rf1s50n06smta49018+4an7254an726050a60vf1s50n06
|
PDF
|
AN7254
Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
Contextual Info: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited
|
OCR Scan
|
rfp50n05rfg50n050-022o11e-12+1291e-3trs126e-307e-612e-9an7254rf650n06rfp50n06an-7254mosfat 24vmosfatrfp70n0634069
|
PDF
|
F1S50N06
Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N
Contextual Info: l i H A R R RFG50N06, RFP50N06, RF1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model
|
OCR Scan
|
1s50n06rfg50n06rfp50n06rf1s50n06sm+9o-247022s1rf1s50n06f1s50n06n-channel mosfet to-247 50a50a60vtc2516ta490181s50n
|
PDF
|
fairchild 9322
Abstract: 4V251 f1s50n06 fairchild APPLICATION NOTE AN 9322
Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet Title FG5 06, P50 6, 1S5 06S bt A, V, 22 m, anwer OSTs utho eyrds ter- July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
|
Original
|
rfg50n06rfp50n06rf1s50n06smta49018+4fairchild 93224v251f1s50n06fairchild application note an 9322
|
PDF
|
F1S50N06
Abstract: rfp50n06 equivalent AN7254 AN7260 RF1S50N06SM RF1S50N06SM9A RFG50N06 RFP50N06
Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs File Number 3575.4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
|
Original
|
rfg50n06rfp50n06rf1s50n06sm175oc+5f1s50n06rfp50n06 equivalentan7254an7260rf1s50n06sm9a
|
PDF
|
fairchild APPLICATION NOTE AN 9321
Contextual Info: RFP50N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 50A, 22 mΩ • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
|
Original
|
rfp50n06175ocfairchild application note an 9321 |
PDF
|
RFPS0N06
Abstract: TA49018 RFP50N06
Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM in te ik il D a ta S h e e t J u ly 1 9 9 9 50A, BOV, 0.022 Ohm, N-Channel Power MOSFETs F ile N u m b e r 3 5 7 5 .4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
|
OCR Scan
|
rfg50n06rfp50n06rf1s50n06smta49018+3an7254an7260rfps0n06
|
PDF
|
rfp50n06
Abstract: F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260
Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
|
Original
|
rfg50n06rfp50n06rf1s50n06sm175oc+9f1s50n06fairchild 9322fairchild application note an 9321fairchild application note an 9322rfp50n06 equivalentta49018rf1s50n06sm9aan7254an7260
|
PDF
|
TA49018
Abstract: RF1S50N06 F1S50N06 123E-3
Contextual Info: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
|
OCR Scan
|
rfg50n06rfp50n06rf1s50n06rf1s50n06sm+8ta490180-022i207e-351e-705e-933e-8f1s50n06123e-3
|
PDF
|
65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
|
Original
|
1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note
|
PDF
|
TRS2-25-1
Abstract: TA49018
Contextual Info: RFG50N06 RFP50N06 fü HARRIS U U S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Package Features JEDEC T0-220AB TOP VIEW • 5 0 A ,60V • r DS(ON) = 0.022Q DRAIN (FLANGE) • Temperature Compensating PSPICE Model
|
OCR Scan
|
rfg50n06rfp50n06t0-220abo-247+698e-135e-383e-61e-30trs2-25-1ta49018
|
PDF
|
RFP50N06
Abstract: F1S50N06 AN7254 AN7260 RF1S50N06 RF1S50N06SM RF1S50N06SM9A RFG50N06 50A60V
Contextual Info: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω Temperature Compensating PSPICE Model
|
Original
|
rfg50n06rfp50n06rf1s50n06rf1s50n06sm+7o-247175ocf1s50n06an7254an7260rf1s50n06sm9a50a60v
|
PDF
|
|
|
F1S50N06
Abstract: 123E-3
Contextual Info: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
|
Original
|
rfg50n06rfp50n06rf1s50n06rf1s50n06sm+8ta4901898e-135e-483e-642e-91e-30f1s50n06123e-3
|
PDF
|