1N826 Search Results

Contextual Info: Zero-TC Reference Diodes Part Number I Microsemi I Division Type [ Mil | Data Power : Spec .| Sheet ID <W Package Outline ! RH4566A-1 RH4567 RH4567-1 RH4567A RH4567A-1 RH4568 RH4568-1 RH4568A RH4568A-1 RH4569 RH4569-1 RH4569A RH4569A-1 1N826 D035) 1N828 (D035Ì

MZ605

Abstract: 1N938A MZ5557 1N821 1N823 1N826 1N827 1N829 1N935A 1N936
Contextual Info: D O - 7 GLASS 6.2 V 11.7 V 9.0 V TEMPERATURE RANGE °C -5 5 , 0, 25 75, 100 Max AVZ mV 96 1N821 1N823 48 1N826 19 1N827 9 I IMO&!7 J 1N829 i V — 0 ,2 5 ,7 5 II 1N936 1N936 1N937 1N938 I 1N939 Non S uffix •V * 15 Ohms MZ605 A Suffix MZ610 10 Ohms A .

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: DIGITRON SEMICONDUCTORS 1N821 – 1N829A DO-35 CASE TEMPERATURE COMPENSATED ZENER REFERENCE DIODE 6.2 & 6.55 Volt MAXIMUM RATINGS 1N821 – 1N829A Operating and storage temperature -65° to +175°C DC power dissipation 500mW @ 25°C Derating solder temperatures

Contextual Info: [ * 9 GaAs INFRARED EMITTING DIODE ipmutïiftiits 1N6266 The 1N6266 is a 940nm LED in a narrow angle, T M6 package. SEATIN G • Good optical io mechanical alignment SYMBOL A •8>b D Ü0D. a e, h .1 . k i. u JNCHES Ml» MAX. -255 .016 ,203 tao .021

zener diode IN 825

Abstract: 6.2V zener diode 1N829 JANTXV DIODE 1N827 1N829 JANTX 1N821 1n823 equivalent 6.2V DIODE 1N825 1N829
Contextual Info: 1N821, A, -1 thru 1N829, A, -1 DO-35 6.2 & 6.55 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The popular 1N821 thru 1N829A series of Zero-TC Reference Diodes provides a selection of both 6.2 V and 6.55 V nominal voltages and

1NB21

Abstract: 1ALN
Contextual Info: 1N821, A, -1 thru Microjsemi Corp. 1N829, A, -1 DO-35 Y T hé ¿hode ç x p e rrs SCOnSDALE. AZ F o r m q r e i n f o r m a t i o n c a ll: 602 941*6300 FEATU RES 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES « ZEN ER VOLTAGE 6.Z V AND 6.55 V

1N82S

Abstract: 1N829-1 500W100
Contextual Info: • 1N821.1N823,1N82S, 1N827, AND 1N829 AVAILABLE IN JAN, JANTX AND JANTXV • 1N821 -1,1N823-1,1N825-1,1N827-1 AND 1N829-1 AVAILABLE IN JAN, JANTX, JANTXV 1N821 thru 1N829A and 1N821-1 thru 1N829-1 AND JANS • 6.2 AND 6.55 VOLT NOMINAL ZENER VOLTAGES •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

5KE68CA

Abstract: ske39c 5KE36C SKE39 ske82ca SKE400A 5KE15CA B70.1050.0 5KE68C ske*400a
Contextual Info: 1.5KE SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 440 Volts 1500 W att Peak Power 5.0 W att Steady State FEATURES DO-201 AE • Plastic package has U nderw riters Laboratory Flam m ability C lassification 9 4 V -0 • G lass passivated chip junction in M olded Plastic

do-213aa solder PAD DIMENSIONS

Abstract: JANTX1N829-1 1N821 1N821UR 1N829 1N829AUR-1 DO-213AA MLL821 MLL829-1
Contextual Info: 1N821UR thru 1N829AUR-1, e3 or MLL821 thru MLL829-1, e3 6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The 1N821UR thru 1N829AUR-1 series of surface mount Zero-TC Reference Diodes provides a selection of both 6.2 V and 6.55 V nominal

zener diode - C 10 ST

Abstract: zener diode IN 825 diode LZ. 02 zener diode 1n821 Characteristics curve of diode st zener diode 1N821A 1N822 1N823 1N823A
Contextual Info: ☆jANStV Microsemi Corp. ' The d io û r experts 1N821, A, -1 thru 1N829, A, -1 DO-7 SC O T T SD A L E , A Z / F o r m o r e i n f o r m a t i o n c a ll: 602 941-6300 FEATURES • ZENER VOLTAGE 6.2 V AND 6.55 V • 1N821, 823, 825, 827 AND 829 HAVE JAN, JA N T X , JA N T X V , J A N S , A N D -1 QUALIFICATIONS

Zener Diode 3v 400mW

Abstract: 1n821 "cross-reference" 1N825 apd 1N821-1N829 1n4575a "cross-reference"
Contextual Info: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current

zener diode marking 333

Abstract: zener diode nomenclature 1N822 CDLL829A
Contextual Info: 1N821UR-1 thru 1N829AUR-1 6.2 & 6.55 Volt ZENER REFERENCE DIODES Qualified per MIL-PRF-19500/159 Available on commercial versions *Qualified Levels: JAN, JANTX, JANTXV and JANS available on some part numbers DESCRIPTION The 1N821UR-1 thru 1N829AUR-1 series of surface mount Zero-TC Reference Diodes

LNB21

Abstract: 1N821-1 1N829-1 1N823 1N825 1N821 1N825-1 1N827 1N829 1N829A
Contextual Info: b3E D 1N821,1N823,1N825,1N827 AND 1N829 AVAILABLE IN • E3DE554 0000454 TB4 JANTX AND JANTXV 1N821-1,1N823-1,1N825-1,1N827-1 AND 1N829-1 AVAILABLE IN JANTX AND JANTXV 1 2 AND 6.55 VOU NOMINAL ZENER VOLTAGES IC D I 1N821 thru 1N829A and 1N821-1 thru 1N829-1

IN821

Abstract: 1nb23 in823 in825 1NB27 1NB29 IN827a in823a Codi Semiconductor IN829
Contextual Info: 1775470 C O D I SEMICONDUCTOR INC 90D ITTSLlTD U I i i , m ì Ì pU 00551 0D00SS1 5 D |~ T - H - tl J fïlfiiîti CODI Semiconductor, Inc. Ml •6.2 AND 6.55 VOLT NOMINAL ZENER VOLTAGES 1N821 thru 1N829A . TEMPERATURE COMPENSATED ZENER DIODES . 1N821.1NB23.1N825,1NB27 AND 1NB29 AVAILABLE IN JAN. JANTX AND JANTXV VERSIONS

jantx diodes

Contextual Info: 1N821UR-1 thru 1N829AUR-1 6.2 & 6.55 Volt ZENER REFERENCE DIODES Qualified per MIL-PRF-19500/159 Available on commercial versions *Qualified Levels: JAN, JANTX, JANTXV and JANS available on some part numbers DESCRIPTION The 1N821UR-1 thru 1N829AUR-1 series of surface mount Zero-TC Reference Diodes

zener diode marking 333

Abstract: DIODE 1N827 1n825 equivalent
Contextual Info: 1N821UR-1 thru 1N829AUR-1 6.2 & 6.55 Volt ZENER REFERENCE DIODES Qualified per MIL-PRF-19500/159 Available on commercial versions *Qualified Levels: JAN, JANTX, JANTXV and JANS available on some part numbers DESCRIPTION The 1N821UR-1 thru 1N829AUR-1 series of surface mount Zero-TC Reference Diodes

SKE33

Abstract: SKE68A SKE400A ske36 1.SKE180 SKE400
Contextual Info: GENERAL SEMICONDUCTOR 3918590 G EN ERAL TS SEM ICO N D U C TO R Ï F| B IIÛ ST O 95D 01983 0 D Q n û 3 / / -J 3 General ^ Semiconductor ^ Industries, Inc. Tr a n s Zo r b ® ^ FEATU RES 1500 watts Peak Pulse Power dissipation Fast Response Available In ranges from 6.8 to 400

Diode 1N41

Abstract: PF7001 CD4583 transistor cd4578 1N7041 1N41 CD4107 2N2326S JANS2N2907A CD4617
Contextual Info: Hi-Rel Components from Aeroflex / Metelics Diodes Switching Zener TC Zener Current Regulators Transistors Small Signal Medium & High Power Darlingtons Silicon Controlled Rectifiers JANHC and JANKC Chips DLA Certified JAN–JANS Short Form Catalog August 9, 2012

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered