1N41 Search Results

Reel Taping Specification JEDEC

Contextual Info: i V. AXIAL TAPING FOR DO-35 PACKAGE A. PRODUCT NAMING SYSTEM Type of package for shipment is classified by a symbol suffixed to a diode name. [Example] 1N4148 TPA2 © - © i- © B. Indicates the taping specifications Indicates JEDEC registration no.

1N4447

Contextual Info: TYPES 1N4148. 1N4149, IN U M i : ^ 4 i9 SILICON SWITCHING DIODES B U L L E T IN NO. D L-S 739269, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents: 1N4148 . . . 1N914 . .

1N4536

Abstract: 1n4531
Contextual Info: TYPES 1N4531 THRU 1N4534, 1N4536 SILICON SWITCHING DIODES B U L L E T I N N O . D L -S 7 3 9 7 7 4 , M A R C H 1 9 6 7 - R E V I S E D M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents 1N4531 . . . 1N4148 . . . 1N914

1n3600

Abstract: 1N4150 1n3600 chip
Contextual Info: P O M P I JTFR DIODF W I T ,r u 1 L/IV7t/U 200rnA Low Power, Switching 1N3600; JAN, JANTX & JANTXV I N 3600 1N4150; JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION • • • • This series of switching diodes is useful in many computer sw itching applications, for

75V 150mA Diode

Contextual Info: COMPUTER DIODE 1c i r 150mA Switching Diode vy i" 1N4153, JAN, JANTX & JANTXV I N 4153 1N4534, JAN, JANTX & JANTXV 1N4534 FEATURES • • • • DESCRIPTION This device is particularly suited to applications where tightly controlled forward characteristics and fast recovery

Contextual Info: LS4151 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Electrical data identical with the device 1N4151 • QuadroMELF package • AEC-Q101 qualified • Material categorization: For definitions of compliance

1N4148-T

Abstract: 1N4148T
Contextual Info: Fast Switching Diode COMCHIP www.comchiptech.com 1N4148 / 1N4448 DO-35 High Speed Features 1.0 25.4 Min. - Fast Switching Speed - General Purpose Rectification - Silicon Epitaxial Planar Construction 0.079 (2.0) Max. 0.157 (4.0) Max. Mechanical Data - Case: DO-35

LL4151-GS08

Contextual Info: LL4151 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diodes • Electrical data identical with the device 1N4151 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see

Contextual Info: Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C

Contextual Info: 1N4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: For definitions of compliance please see

1N4154

Abstract: 1N4154-TAP 1N4154-TR
Contextual Info: 1N4154 Vishay Semiconductors Small Signal Fast Switching Diodes Features • Silicon Epitaxial Planar Diode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

IR5H

Abstract: diode ir01
Contextual Info: MCL4154 Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4154 • Micro Melf package Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage

Contextual Info: LL4151_ Vishay Telefun ken Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4151 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage

Contextual Info: Tem ic LL4154 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4154 Applications Extreme fast switchess Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current

1N4148 Micro MELF

Abstract: 1n4148 melf package
Contextual Info: Tem ic MCL4148.MCL4448 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the devices 1N4148 and 1N4448 respectively •

Contextual Info: 1N4151_ Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current

1N4148.1N4448

Abstract: BYV37-BYV38 byg20
Contextual Info: Temic Semiconductors Selector Guide - Alphanumeric Index 1N4148.1N4448 1N4150 1N4151 1N4154 1N4728A.1N4761A 1N5221B.1N5267B 1N5417.1N5418 BA1282.BA1283 BA282.BA283 BA479G.BA479S BA604 BA679.BA679S BA682.BA683 BA779.BA779S BA779 - 2 BA979.BA979S BA982.BA983

telefunken ta 350

Abstract: vishay AX
Contextual Info: 1N4154 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current

Contextual Info: 1N4150_ Vishay Telefun ken Silicon Epitaxial Planar Diode Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings

MARKING CODE diode sod123 t4

Abstract: 1N4148W marking code t4
Contextual Info: 1N4148W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.15 Ampere SOD-123 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOD-123 MECHANICAL DATA

1N4148

Contextual Info: LITE-ON SEMICONDUCTOR 1N4148 REVERSE VOLTAGE - 100 V POWER DISSIPATION - 500 mW FAST SWITCHING DIODE DO-35 FEATURES Fast Switching Device Trr < 4.0 nS Hermetically Sealed Glass Compression Bonded Construction Low leakage current MECHANICAL DATA DO-35 Dim.

Contextual Info: LS4151_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4151 • Quadra Melf package Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter Repetitive peak reverse voltage

1N4154 telefunken

Contextual Info: Tem ic 1N4154 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25 °C . Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current

diode ep sod-323

Abstract: 1N4148 SOD-323 A
Contextual Info: MCL4148.MCL4448 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the devices 1N4148 and 1N4448 respectively • M icro Melf package