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    50MMX50MMX Search Results

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    SOD JEDEC

    Contextual Info: BAS85 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings T, = 25°C Parameter


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    BAS85 50mmx50mmx1 01-Apr-99 BAS85_ -April-99 SOD JEDEC PDF

    Contextual Info: _BAS86 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage ¿y Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25°C


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    BAS86 50mmx50mmx1 01-Apr-99 PDF

    Contextual Info: T em ic TZMC S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization


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    50mmx50mmx 200mA 24-Jun-96 PDF

    Contextual Info: TZM5221 B.TZM5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221 B.1 N5267B • Low reverse current level • Vz-tolerance ± 5% with the \ devices Applications


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    TZM5221 TZM5267B 1N5221 N5267B 50mmx50mmx1 01-Apr-99 PDF

    Contextual Info: LL4151_ Vishay Telefun ken Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4151 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage


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    LL4151_ 1N4151 50mmx50mmx1 01-Apr-99 PDF

    Contextual Info: Tem ic LL4154 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4154 Applications Extreme fast switchess Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current


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    LL4154 1N4154 50mmx50mmx 24-Jun-96 24-Iun-96 PDF

    BA979

    Contextual Info: BA979.BA979S VISHAV Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current


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    BA979 BA979S 50mmx50mmx1 01-Apr-99 PDF

    1009C

    Contextual Info: BA679.BA679S Vishay Telefun ken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance in adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current Junction temperature


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    BA679 BA679S 50mmx50mmx1 1009c 01-Apr-99 1009C PDF

    Ip200mA

    Abstract: 600L100
    Contextual Info: Tem ic TZMB Semiconductors Silicon Epitaxial Planar Z-Diodes Features • • • • • • Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise Vz-tolerance ± 2% Applications y49.n1


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    --300K/W 50mmx50mmxl 24-Jun-96 Ip200mA 600L100 PDF

    Contextual Info: TZMB._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • y Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • Vz-tolerance ± 2%


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    50mmx50mmx1 01-Apr-99 PDF

    A2 12 zener diode

    Abstract: diode ZENER A2 6 A2 9 zener diode
    Contextual Info: BZX55B2V4-BZX55B75 500mW, 2% Tolerance SMD Zener Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS D Features C —Wide zener voltage range selection : 2.4V to 75V —VZ Tolerance Selection of ±2% A —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate


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    BZX55B2V4-BZX55B75 500mW, DO-35 OD-27) C/10s A2 12 zener diode diode ZENER A2 6 A2 9 zener diode PDF

    Contextual Info: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Zener voltage specified at 50 • Maximum delta Vz given from 10 ¡xA to 100 iA • Very high stability • Low noise Applications Voltage stabilization Absolute Maximum Ratings


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    TZS4678. TZS4717 300K/W 50mmx50mmx1 100mA Number85613 -Apr-99 01-Apr-99 PDF

    Contextual Info: LS4151_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4151 • Quadra Melf package Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter Repetitive peak reverse voltage


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    LS4151_ 1N4151 01-Apr-99 PDF

    FZIT

    Contextual Info: TZQ5221 B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization


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    TZQ5221 TZQ5267B --300K/W 50mmx50mmx1 01-Apr-99 FZIT PDF

    Contextual Info: LL4150_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings


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    LL4150_ 01-Apr LL4150 01-Apr-99 PDF

    Telefunken u 439

    Contextual Info: T e m ic t z m b . S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • V/-tolerance ± 2%


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    300K/W 50mmx50mmxl D-74025 24-Jun-96 Telefunken u 439 PDF

    DO 213

    Contextual Info: Tem ic BA682.BA683 S e m i c o n d u c t o r s Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance Applications Band switching in VHF-tuners Absolute Maximum Ratings Tj = 25 °C Parameter


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    BA682 BA683 50mmx50mmx 24-Jun-96 100mA 100MHz, 200MHz, DO 213 PDF

    BU2152FS

    Abstract: BD7851FP BU2050F BU2092F BU2092FV BU2099FV HSOP25 SSOP-A32 SSOP-B20
    Contextual Info: Serial-in / Parallel-out Driver Series Serial / Parallel 4-input Drivers No.09051EAT03 ●Description Serial-in-parallel-out driver incorporates a built-in shift register and a latch circuit to control a maximum of 24 LED by a 4-line


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    BU2050F BU2092F BU2092FV BU2099FV BD7851FP BU2152FS 09051EAT03 BU2152FS HSOP25 SSOP-A32 SSOP-B20 PDF

    58LT00F

    Abstract: TA58LT00F
    Contextual Info: TA58LT00F 東芝バイポーラ形リニア集積回路 シリコン モノリシック TA58LT00F 150 mA ON/OFF 機能付きトラッキングレギュレータ TA58LT00F は、ON/OFF 機能付きの 150 mA 最大 小型面実装型 ロードロップアウトレギュレータです。負荷に必要な電圧をマイコン等


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    TA58LT00F TA58LT00F 58LT00F 2002/95/EC) 58LT00F PDF

    TA58L05F

    Abstract: TA58L06F TA58L08F TA58L09F TA58L10F TA58L12F TA58L15F
    Contextual Info: TA58L05,06,08,09,10,12,15F 東芝バイポーラ形リニア集積回路 シリコン モノリシック TA58L05F,TA58L06F,TA58L08F,TA58L09F TA58L10F,TA58L12F,TA58L15F 250 mA ロードロップアウトレギュレータ TA58L*F シリーズは出力段に PNP トランジスタを使用した出力


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    TA58L05 TA58L05F TA58L06F TA58L08F TA58L09F TA58L10F TA58L12F TA58L15F TA58L* TA58L09F TA58L15F PDF

    125OC

    Abstract: CHTA42LPT
    Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHTA42LPT SURFACE MOUNT High Voltage NPN Transistor VOLTAGE 300 Volts CURRENT 500 mAmpere APPLICATION * Small Signal Amplifier . FEATURE SC-59/SOT-346 * Surface mount package. SC-59/SOT-346 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=20mA)


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    CHTA42LPT SC-59/SOT-346 SC-59/SOT-346) 300mW SC-59/SO 125OC -55OC CHTA42LPT PDF

    LL101A

    Abstract: LL101B LL101C
    Contextual Info: LL101ALL101C Vishay Telefunken Small Signal Schottky Barrier Diodes Features D Integrated protection ring against static discharge D Low capacitance D Low leakage current D Low forward voltage drop Applications HF–Detector Protection circuit Diode for low currents with a low supply voltage


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    LL101A LL101C LL101A LL101B D-74025 13-Mar-00 LL101B LL101C PDF

    LL4150

    Contextual Info: LL4150 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Low forward voltage drop D High forward current capability Applications 94 9371 High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings Tj = 25_C


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    LL4150 D-74025 01-Apr-99 LL4150 PDF

    1N4154

    Abstract: LS4154
    Contextual Info: LS4154 Silicon Epitaxial Planar Diode Features D Electrical data identical with the device 1N4154 D Quadro Melf package Applications 96 12009 Extreme fast switches Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage


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    LS4154 1N4154 D-74025 24-Jun-96 1N4154 LS4154 PDF