BA779S Search Results

1N4148.1N4448

Abstract: BYV37-BYV38 byg20
Contextual Info: Temic Semiconductors Selector Guide - Alphanumeric Index 1N4148.1N4448 1N4150 1N4151 1N4154 1N4728A.1N4761A 1N5221B.1N5267B 1N5417.1N5418 BA1282.BA1283 BA282.BA283 BA479G.BA479S BA604 BA679.BA679S BA682.BA683 BA779.BA779S BA779 - 2 BA979.BA979S BA982.BA983

Contextual Info: Product specification BA779;BA779S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Wide frequency range 10 MHz to 1 GHz 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

BA779

Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
Contextual Info: BA779 / BA779S VISHAY Vishay Semiconductors RF PIN Diodes - Single in SOT-23 Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.1 mg

Contextual Info: BA779.BA779S V ï|P A f Vishay Telefu nken ▼ Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance In adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature

BA779

Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
Contextual Info: BA779 / BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT-23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications Current controlled HF resistance in adjustable

BA779

Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
Contextual Info: BA779/BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications • Current controlled HF resistance in adjustable

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current

Contextual Info: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

Contextual Info: BA779/BA779S VISHAY Vishay Semiconductors RF PIN Diodes Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8 mg

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

8550 sot-23

Abstract: BA779 BA779S
Contextual Info: BA779.BA779S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature

Contextual Info: BA779.BA779S_ v is h a y Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter

Contextual Info: Te m ic BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features • W ide freq u en cy range 10 M H z to 1 G H z Applications Current co n tr o lled H F resistan ce in adjustable attenuators Absolute Maximum Ratings Tj = 2 5 ° C T e st C o n d itio n s

Contextual Info: BA779 / BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT-23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications Current controlled HF resistance in adjustable

zr smd

Abstract: transistor smd ZR BA779 BA779S BA799 0/transistor smd ZR 55
Contextual Info: Diodes SMD Type Silicon PIN Diodes BA779;BA779S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Wide frequency range 10 MHz to 1 GHz 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

CQ 734 G

Contextual Info: BA779.BA779S VtSHAY ▼ Vishay Telefunken Silicon PIN Diodes Features • W id e fre q u e n c y ra n g e 10 M H z to 1 G H z Applications C u rre n t c o n tro lle d a tte n u a to rs HF re s is ta n c e In a d ju s ta b le Absolute Maximum Ratings Tj = 2 5 ° C

BA779-GS08

Abstract: BA779 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
Contextual Info: BA779/BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications • Current controlled HF resistance in adjustable

BA779

Contextual Info: BA779/BA779S VISHAY Vishay Semiconductors RF PIN Diodes Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8.1 mg

5d surface mount diode

Abstract: JS29 bas16 cross reference DL4148 DL4148 package MMBD1702 RFE International BAS21 DL4448 LL4148
Contextual Info: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

LL4148 melf

Abstract: DIODE SOT-23 PACKAGE JS29 bas16 cross reference DL4148 BAS21 DL4448 LL4148 LL4448 MMBD1402
Contextual Info: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters