1N625 Search Results

L0210

Abstract: 1N626
Contextual Info: TYPES 1N625 THRU 1N629 SILICON SWITCHING DIODES B U L L E T I N N O . D L S 739121, S E P T E M BE R 1 9 6 6 - R E V I S E D M A R C H 1973 MEDIUM-SPEED SW ITCHING DIODES • Rugged Double-Plug Construction m echanical d ata Double-plug construction affords integral positive contact by means o f a thermal compression bond. Moisture-free

IR 30 D1

Abstract: BAX17 FDH444 1N3070 1N625 1N626 1N627 1N628 1N629 1N658
Contextual Info: SEMICOND DISCRETE HE D | bS01130 High Voltage Diodes Glass Package Device No. Package No. Vrrm V Min 1N625 DO-35 30 * Ir nA @ Max Vr V VF V 1000 20 1.5 Min Max If mA Ü0 3 ? 0 a 2 T g T-01-01 C pF Max 4.0 •rr ns Max Test Cond. Proc. No. 1000 (Note 1)

DO-35 PACKAGE

Abstract: DSAIH000251
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

914B

Abstract: 1N918 1N4147 1n4009 diode 1n4009 DO-35 1N3064 1N3600 DIODE 1N4147 1N914
Contextual Info: National Semiconductor Diode Data Computer Diodes Glass Package *R nA @ Max Vp V > > VRRM V Min C PF Max *rr ne Max Test Cond. Proo. No. Devico No. Package No. 1N625 DO-35 30 1000 20 1.5 4 1000 (Note 1) D4 1N914 DO-35 100 25 5000 20 75 1.0 10 4 (Note 2)

175 WIV

Abstract: 1N482B 1N629 n628 1N485B 1N625 1N626 1N627 1N628
Contextual Info: I K t IN TE RNA TIO NA L QBE D | 1171143 0000377 t J T T -0 3 -0 f GENERAL PURPOSE DIODES „ 1N625 1N626 • 1N627 1N628 • 1N629 ABSOLUTE MAXIMUM RATINGS • VF 1.5 M @ 4.0 mA • lR . 1 .0 n A @ W IV Temperatures Storage Temperature Range Maximum Junction Operating Temperature

IR 30 D1

Abstract: BAX17 FDH444 1N625 1N626 1N627 1N628 1N629 1N658 1N659
Contextual Info: NATL SEMICOND DISCRETE H E D | High Voltage Diodes Glass Package D evice No. P ackage No. Vrrm V Min 1N625 DO-35 30 1N626 DO-35 50 1N627 DO-35 100 1N628 DO-35 150 1N629 DO-35 200 1N658 DO-35 120 1N659 DO-35 60 1N660 DO-35 120 1N661 DO-35 240 Ir nA Max 1000

Contextual Info: I K t INTERNATIONAL D3E D | 117'H83 □□00277 k T-03-Of GENERAL PURPOSE DIODES „ 1N625 1N626 • 1N627 1N628 • 1N629 ABSOLUTE MAXIMUM RATINGS • VF 1.5 M @ 4.0 mA • lR . 1 .0 n A @ W IV Temperatures Storage Temperature Range Maximum Junction Operating Temperature

1N4009

Abstract: BKC666 1N4938 1N625 1N914 1N914A BAW75 BAW76 BKC600 BKC900
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

914B

Abstract: 1N3600 DO-35 1n4147 IR D4-D4 IR diode D4-D4 1N3064 1N4009 1N625 1N914A
Contextual Info: NATL S E M ICONO HE D IS C R E T E D I National Semiconductor t.S Q H 3 Q 0031^0 B | g T-OI-OÌ * sr Computer Diodes Glass Package VF V c *rr na Max Teat Cond. Proc. No. 1000 (Note 1) D4 4 (Note 2) D4 20 4 (Note 2) D4 0.72 1.0 5 100 4 (Note 2) D4 20 75 1.0

FDS01503

Abstract: FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent
Contextual Info: This Material National Semiconductor Surface Mount Diodes <S> m 2 t-i General Purpose & Specialty Diodes O Device Description Pkg. No. Pin Out Bv V Min •r (nA) @ Max Vr V Vf <V> Max If mA mA C PF Max to­ ns Max Test Cond. FDS01000 FAMILY Proc. Family

FDS01201

Abstract: FDS04148 FDS01203 FSD01200 FDS01503 FDS01501 1N459 equivalent FDS01202 1N627 FDS01703
Contextual Info: £ 3 National Semiconductor Surface Mount Diodes S> m 3: n O O General Purpose & Specialty Diodes PLASTIC PACKAGE Description Pkg. No. Pin Out By (V Min - I I Device Vr V Vp (V> Max 1000 75 0.715 1.0 0.855 10.0 1.1 50.0 1.3 100.0 1.0 100 See BAS 16 See BAS 16

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

WIMA TFM

Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

IN939

Abstract: 1n4771 1N4770 1N4770A 1N4771A 1N4772 1N4772A 1N4773 1N4773A 1N943
Contextual Info: a> ro OUICK REFERENCE GUIDE MICROSEMI VOLTAGE REFERENCE TC DIODES Test Current l7T mA 62 62 75 ?5 DO-7/DO-35 DO-7/DO-35 6 3 75 DO-7 Operating Temperature Range, °C - 55 to * 100 - 5 5 to - 100 0.002%/°C 0.005% °C 0.01%/ C Case Type Type Number A VZ MV

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

1K60

Abstract: 1K34A Diode Equivalent 1N87 Diode Equivalent 1N34A FDH444 1N270 diode equivalent equivalent components of diode 1N34A 1n3469 1N996 1N645
Contextual Info: Other Diodes Part No. CrossReference Operating Temperature: -65o C to 160 o C Power Dissipation Max. Avg. Rect. Current Peak Voltage Continuous Rev. Current Forward Voltage Max. Reverse Recovery Time Package Pd mW Io(mA) VRRM (V) IR (nA)@VR (v) V F (V)@IF (mA)