1N4607 Search Results

1N4607

Abstract: SC-40 TOSHIBA 1N4607
Contextual Info: TOSHIBA {DISCRET E/ OPT O} b? 9097250 TOSHIBA DISCRETE/OPTO 1N4607 - DDDTSTS □ "J , D rr.o'lS-*? 67C 09295 Silicon Epitaxial.-Planar Type Diode TENTATIVE Unit in nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.

D035

Abstract: DT230A D0-35 D035 package 1N4830 1N4150 1N4450 1N4606 1N4607 1N460B
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Part Number BV @ 1OOü A Min. V 1N4451 40 1N4607 85 Ir @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

1N4607

Abstract: TL50 1N4150 1N4608 DO-213AA LL4607 LL4608 diode with PIV 200
Contextual Info: Silicon Switching Diode DO-35 Glass Package 1N4607 1N4150 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features L ea dDi a. 0 .0 18-0 .0 22" 0 .458-0 .558m m

diode A14A

Abstract: A14A A14P Rectifier A15A diode A115m diode a15a ge a15a 1N4150 1N4450 1N4606
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

1N4607

Abstract: 1N4452 1N4608
Contextual Info: niCROSEMI CORP/ Ü1ATERTOÜIN SDE D • ^ 3 4 7 ^ 3 GGlHBbT 4SÛ ■ U N I T 1N4452-1N4607' 1N4608 COMPUTER DIODE Higlr Conductance T -^ 3 -o ^ FEATU RES • M etallu rgical Bond • Planar Passivated • High C o n ductance • DO-35 Package DESCRIPTION T h is series offers M etallurgical Bonding

Contextual Info: Silicon Switching Diode 1N4607 Applications IDO-35 Glass Package 1 Used in general purpose applications,w here a controlled forward characteristic and fast switching speed are important. Features • • • Six sigm a quality M etallurgical^ bonded BKC's Sigm a Bond plating

D035

Abstract: Bv 42 transistor STB567 D035 package 1N4150 1N4450 1N4606 1N4607 1N460B DT230C
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 Ir Vf @ 25°C Max. 1 <nA) Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package T»pe Package Outline No.

1N4607

Abstract: 100-C 1N4452
Contextual Info: COMPUTER DIODE 1N4452, 1N4607 High Conductance FEATU RES D E S C R IP T IO N • • • • This series offers Metallurgical Bonding and is specifically designed for high conductance sw itching applications such as core memories. Metallurgical Bond Planar Passivated

1N4150

Abstract: 1N4450 1N4606 1N4607 1N460B D035 DT230C DT230H JS-2-65-11
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

TOSHIBA 1N4607

Abstract: IP100A 18A1a
Contextual Info: TOSHIBA {DIS CR ET E/OPT O} 9097250 TOSHIBA b? D I S C R E T E /OPTO 1N4607 - DDOTETS Q "J 6 7C 09295 , D ,r=- . o ' } - * ? Silicon E pitaxial.-Planar Type Diode TENTATIVE Unit in nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.

Contextual Info: COMPUTER DIODE 1N4452, 1N4607, 1N4608 High Conductance FEATURES DESCRIPTION • • • • This series offers Metallurgical Bonding and Is specifically designed for high conductance switching applications such as core memories. Metallurgical Bond Planar Passivated

IRS 740

Contextual Info: , L nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 1N4451 1N4607.8 absolute maximum ratings: (25°C)* 1N443I 1N4M7 •1N4WJ 30 70 70 Voltoff* Reverse Volts Ciirrmt Average Rectified Recurrent Peak Forward

TRANSISTOR 2n3901

Abstract: MPD300 mpd200 1N4156 2N2368 2N3973 1N4150 1N4450 1N4606 1N460B
Contextual Info: SIGNAL DIODES 100 - 200 MA TYPES 200 - 400 MA TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

in4606

Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

SS321

Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package

1N4447-A

Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

FD100

Abstract: 1N408 FD600 N4376 1N4148 JANTX 1n4376 equivalent 1N5317 1N916B 1N4086 1n916 equivalent
Contextual Info: DIODES COMPUTER DIODES BY ASCENDING t R R GLASS PACKAGE *RR Bv C Package If pF Equivalent mA MAX Package .75 0.8 DO-7 DO-7 VF ns VOLTS nA •r @ TYPE M AX MIN MAX @ FD700 0.70 30 50 @ 15 1N4244 0.75 20 100 @ 1 N4376 0.75 20 100 1N4376 JAN 0.75 20 FD777

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

AMERICAN POWER DEVICES 1n914

Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
Contextual Info: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

ALL4150

Abstract: 1N4606
Contextual Info: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current