1SV238 Search Results

420F

Abstract: T362 T363 isv239 1SV238 1SV239 1SV245 1T32 1T32A 1T33
Contextual Info: - £ 1SV238 tt £ n z. 1SV239 1SV245 1T32 1T32A v s " y ^ - 1T33 V- - 1T33A y — 1T33C y ^ - 1T 359 y — 1T360 y - — 1T3S2 y 1T362A y —— 1T 363 y - — — 1T363A y —— 1T364 y - - 1T 365 y — 1T 366 V i" HVU359 B sL HVE310 B tL HVK89 B ÎL HVM11

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV238 U nit in mm C A T V T U N IN G . • High Capacitance Ratio: C 2V / C25V= 11.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. • Usful for Small Size Tuner. M A X IM U M R ATINGS (Ta = 2 5°C)

1-1e1a

Contextual Info: SILICON EPITAXIAL PLANAR TYPE 1SV238 Unit in mm C A TV TU N IN G . • High Capacitance Ratio: C2V / C25V = 11.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. • Usful for Small Size Tuner. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

isv239

Abstract: 1SV238 1SV239 1SV245 1T32 1T32A 1T33 1T33A 1T33C
Contextual Info: - £ 1SV238 tt £ n z. 1SV239 1SV245 1T32 1T32A v s " y ^ - 1T33 V- - 1T33A y — 1T33C y ^ - 1T 359 y — 1T360 y - — 1T3S2 y 1T362A y —— 1T 363 y - — — 1T363A y —— 1T364 y - - 1T 365 y — 1T 366 V i" HVU359 B sL HVE310 B tL HVK89 B ÎL HVM11

HVE310

Abstract: 1SV245 isv239 1SV238 1SV239 1T32 1T32A 1T33 1T33A 1T33C
Contextual Info: - £ 1SV238 tt £ n z. 1SV239 1SV245 1T32 1T32A v s " y ^ - 1T33 V- - 1T33A y — 1T33C y ^ - 1T 359 y — 1T360 y - — 1T3S2 y 1T362A y —— 1T 363 y - — — 1T363A y —— 1T364 y - - 1T 365 y — 1T 366 V i" HVU359 B sL HVE310 B tL HVK89 B ÎL HVM11

1SV211

Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
Contextual Info: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

3sk fet

Abstract: transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type
Contextual Info: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM

high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Contextual Info: 1. Using Device Selection Flowchart 1. Using Device Selection Flowchart 17 1. Using Device Selection Flowchart 1.1 General Purpose Low Frequency Transistor Selection Method Start I S ig n a l Frequency H igh Frequency ~ G H Z Low Frequency (D C ~ S e v e ra l M HZ)

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

HVE310

Abstract: 1SV238 1SV239 1SV245 1T32 1T32A 1T33 1T33A 1T33C
Contextual Info: - §Ä Jfc « t f i m i m 189 ' - fdmax C t Vl /Ct(V2) * £ tt p £ (mW) Vr m Vr (V) <V) Ct,Cj*(pF) min typ fk ft max V r (V) I Rtnax Qrain min typ max V I <V) V2 ( V ) (Q ) m V r (V) f(MHz) ( u A) V r (V ) T un 30 31 2. 75 38 3. 25 2 25 10.7 2 25 0. 7 5 4 70

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

3120 tuner

Abstract: C5086 1SS242 1SV226 1SV204 2sc low noise C1923 1SS241 mos cascode 2SA1161
Contextual Info: [I] PRODUCT OUTLINE & EXPLANATION 1. SELECTION GUIDE PACKAGE TYPES & APPLICATION 1.1 TRANSISTORS FOR TV TUNER Package Style TO -92 A PPLICATIO N ♦ Super-Mini Super-Mini Quad (SO T-23 M O D ./ (S O T -143 M O D .) T O -23 6 M O D . ) * * % % " • UHF M IX

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

2sc 1203

Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
Contextual Info: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or