1SS307 Search Results

1SS307

Contextual Info: 1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications Unit in mm Low forward voltage : VF = 1.0V typ. Low reverse current : IR = 0.1nA (typ.) Small total capacitance : CT = 3.0pF (typ.) Small package : SC−59

Contextual Info: 1SS307 T O SH IB A 1SS307 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm GENERAL PUROPOSE RECTIFIER APPLICATIONS. • • • • Low Forward Voltage Low Reverse Current Small Total Capacitance Small Package + 0 .5 2 .5 - 0 . 3 VF = 1.0V Typ. lR = 0.1nA(Typ.)

Contextual Info: 1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications l Low forward voltage : VF = 1.0V typ. l Low reverse current : IR = 0.1nA (typ.) l Small total capacitance : CT = 3.0pF (typ.) l Small package : SC−59 Unit: mm

TO-236MOD

Abstract: 1SS307
Contextual Info: 1SS307 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS307 単位 : mm ○ 一般整流用 z z z z : SC−59 : VF = 1.0V 標準 外形が小さい。 順電圧特性が良い。 逆電流が非常に小さい。 端子間容量が小さい。

1SS307

Contextual Info: 1SS307 SILICON PLANAR TYPE GENERAL PUROPOSE RECTIFIER APPLICATIONS. Unit in mm . Low Forward Voltage :V f = 1 .3V Max. . Low Reverse. :lR=0.lnA(Typ . ) Current . Small Total Capacitance : C*r-3.0pF(Typ. ) . Small Package M A X I M U M RATINGS :SC-59 (Ta=25°C)

Contextual Info: Product specification 1SS307 Features SOT-23 3 +0.1 2.4-0.1 :CT = 3.0 pF Typ 0.4 :IR= 0.1 nA (Typ) 1 0.55 Low reverse Current +0.1 1.3-0.1 :VF =1.0 V(Typ) Small total capacitance Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low forward voltage 2 +0.1 0.95-0.1 +0.1

1SS307

Abstract: K3250
Contextual Info: TOSHIBA 1SS307 1 SS307 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm GENERAL PUROPOSE RECTIFIER APPLICATIONS. • • • • Low Forward Voltage Low Reverse Current Small Total Capacitance Small Package +0.5 2.5-0.3 +0.25 1.5-0.15 VF = 1.0V Typ.

Contextual Info: 1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications z Low forward voltage : VF = 1.0V typ. z Low reverse current : IR = 0.1nA (typ.) z Small total capacitance : CT = 3.0pF (typ.) z Small package : SC−59 Unit: mm

TO-236MOD

Abstract: 1SS307 TOSHIBA DIODE 30V10A
Contextual Info: 1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications Low forward voltage : VF = 1.0V typ. Low reverse current : IR = 0.1nA (typ.) Small total capacitance : CT = 3.0pF (typ.) Small package : SC−59 Unit: mm Maximum Ratings (Ta = 25°C)

1SS307

Contextual Info: 1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications z Low forward voltage : VF = 1.0V typ. z Low reverse current : IR = 0.1nA (typ.) z Small total capacitance : CT = 3.0pF (typ.) z Small package : SC−59 Unit: mm

1SS307

Contextual Info: 1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications l Low forward voltage : VF = 1.0V typ. l Low reverse current : IR = 0.1nA (typ.) l Small total capacitance : CT = 3.0pF (typ.) l Small package : SC−59 Unit: mm

1SS307

Contextual Info: 1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications Low forward voltage : VF = 1.0V typ. Low reverse current : IR = 0.1nA (typ.) Small total capacitance : CT = 3.0pF (typ.) Small package : SC−59 Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications z Low forward voltage : VF = 1.0V typ. z Low reverse current : IR = 0.1nA (typ.) z Small total capacitance : CT = 3.0pF (typ.) z Small package : SC−59 Unit: mm

Contextual Info: 1SS307 TOSHIBA SILICON EPITAXIAL PLANAR TYPE 1SS307 Unit in mm GENERAL PUROPOSE RECTIFIER APPLICATIONS. Low Forward Voltage Low Reverse Current Small Total Capacitance Small Package • • • • +0.5 2.5-0.3 : Vp = l,0V Typ. : = 0.1nA (Typ.) : CT = 3.0pF (Typ.)

Marking C9

Abstract: Marking c9 SOT23 1SS307
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Type 1SS307 Features SOT-23 3 +0.1 2.4-0.1 :CT = 3.0 pF Typ 0.4 :IR= 0.1 nA (Typ) 1 0.55 Low reverse Current +0.1 1.3-0.1 :VF =1.0 V(Typ) Small total capacitance Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low forward voltage

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入