1SV245 Search Results

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV245 UHF SHF T U N IN G • • • High Capacitance Ratio : C2V / C25V = 5.7 Typ. Low Series Resistance : rs= 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. M A X IM U M RATIN G S (Ta = 25°C)

1SV245

Contextual Info: 1SV245 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV245 UHF SHF Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 5.7 typ. • Low series resistance: rs = 1.2 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV245

Abstract: C25V
Contextual Info: 1SV245 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 UHF SHF TUNING • High Capacitance Ratio : C2V/C25V = 5.7 Typ. • Low Series Resistance : rs = 1.20 (Typ.) • Excellent C - V Characteristics, and Small Tracking Error.

Contextual Info: 1SV245 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV245 UHF SHF Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 5.7 typ. · Low series resistance: rs = 1.2 Ω (typ.) · Excellent C-V characteristics, and small tracking error.

1SV245

Abstract: C25V
Contextual Info: 1SV245 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 24 5 Unit in mm UHF SHF TUNING High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error.

1SV245

Abstract: C25V IR 331 G
Contextual Info: 1SV245 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV245 ○ UHF SHF 電子同調用 • 単位: mm 容量変化比が大きい。 : C2V/C25V = 5.7 標準 • 直列抵抗が小さい。 : rs = 1.2 Ω (標準) •

Contextual Info: TOSHIBA 1SV245 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 U nit in mm UHF SHF TUNING High Capacitance Ratio : C 2V /C 25V = 5.7 Typ. Low Series Resistance : rs = 1.20 (Typ.) 1 1 . ¿ 0 - 0.1 Excellent C - V Characteristics, and Small Tracking Error.

1SV245

Abstract: C25V
Contextual Info: 1SV245 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 UHF SHF TUNING • High Capacitance Ratio : C2V/C25V = 5.7 Typ. • Low Series Resistance : rs = 1.20 (Typ.) • Excellent C - V Characteristics, and Small Tracking Error.

SV245

Contextual Info: 1SV245 TOSHIBA 1 SV2 4 5 TOSHIBA VARIABLE CAPACITANCE DIODE UHF SHF TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error.

Contextual Info: 1SV245 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 UHF SHF TUNING High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. MAXIMUM RATINGS (Ta = 25°C)

420F

Abstract: T362 T363 isv239 1SV238 1SV239 1SV245 1T32 1T32A 1T33
Contextual Info: - £ 1SV238 tt £ n z. 1SV239 1SV245 1T32 1T32A v s " y ^ - 1T33 V- - 1T33A y — 1T33C y ^ - 1T 359 y — 1T360 y - — 1T3S2 y 1T362A y —— 1T 363 y - — — 1T363A y —— 1T364 y - - 1T 365 y — 1T 366 V i" HVU359 B sL HVE310 B tL HVK89 B ÎL HVM11

1SV245

Contextual Info: 1SV245 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV245 UHF SHF Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 5.7 typ. • Low series resistance: rs = 1.2 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV245

Contextual Info: SILICON EPITAXIAL PLANAR T Y P E 1SV245 UHF SHF TU N IN G • • • High Capacitance Ratio : C2V / C25V = 5.7 Typ. Low Series Resistance : rs= 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. M A X IM U M RATINGS (Ta = 25°C) SYMBOL

1SV245

Contextual Info: 20010110 1SV245 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 2V ～ 25V Ta = 27℃

HVE310

Abstract: 1SV245 isv239 1SV238 1SV239 1T32 1T32A 1T33 1T33A 1T33C
Contextual Info: - £ 1SV238 tt £ n z. 1SV239 1SV245 1T32 1T32A v s " y ^ - 1T33 V- - 1T33A y — 1T33C y ^ - 1T 359 y — 1T360 y - — 1T3S2 y 1T362A y —— 1T 363 y - — — 1T363A y —— 1T364 y - - 1T 365 y — 1T 366 V i" HVU359 B sL HVE310 B tL HVK89 B ÎL HVM11

1SV245

Contextual Info: 1SV245 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV245 UHF SHF Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 5.7 typ. • Low series resistance: rs = 1.2 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

Contextual Info: 1SV245 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 <; \ / 7 d * UHF SHF TUNING High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.2ft (Typ.) Excellent C - V Characteristics, and Small Tracking Error.

Contextual Info: Product specification 1SV245 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 5.7 Typ. Low Series Resistance:rs = 1.2 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05 0.1-0.02 Excellent C-V Characteristics,and Small Tracking Error.

diode T3 Marking

Abstract: smd diode marking 77 1SV245 marking T3
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV245 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 5.7 Typ. Low Series Resistance:rs = 1.2 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05

Contextual Info: 1SV245 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 4 5 UHF SHF TUNING Unit in mm High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error.

1SV245

Contextual Info: 1SV245 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV245 UHF SHF Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 5.7 typ. · Low series resistance: rs = 1.2 Ω (typ.) · Excellent C-V characteristics, and small tracking error.

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

ACD0900S3C

Abstract: 1SV245 ACD0900
Contextual Info: A ACD0900S3C VHF/UHF CATV/TV Tuner Downconverter DATA SHEET - Rev . 0 FEATURES • Integrated Monolithic Downconverter • 8 dB Noise Figure • 10 dB Conversion Gain • High Linearity • Small Size • Low Cost • High Reliability DESCRIPTION The ACD0900 MMIC is a high performance downconverter

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード