1N1148
Abstract: 1N1146 1N1143A 1N1149 lN114 Edal
Contextual Info: 4SE T> • EDAL INDUSTRIES INC 30^571^ 0000271 351 ■ EDL 7 ^ ó i-ó J +3 / B. PIY S ee-T ab le 25 See T able AMPS V O See T able F57G STYLE STAMP 25 E d al, P o la r it y symbol, P/N EQUIY. TO P/N 1N1143A 1N1146 1N1147 1N1148 1N1149 — _ EXCEPT
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1N1149
Abstract: 1N1149 JAN 1N1147 1N1147 JAN
Contextual Info: INCH-POUND MIL-S-19500/254B 21 March 2005 SUPERSEDING MIL-S-19500/254A EL 6 February 1968 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, TYPES 1N1147 AND 1N1149, JAN Inactive for new design after 7 June 1999. This specification is approved for use by all Departments
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mil-s-19500/254bmil-s-19500/254a1n11471n1149+3mil-prf-195001n1149 jan1n1147 jan
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1N1148
Abstract: 1N1149 N 4148 1N1143A Edal
Contextual Info: EDAL INDUSTRIES INC 4SE D m 30TS71L. 0 0 0 0 2 7 1 321 « E D L y^oi-oj » +3/ B. pry See- Table See Table 25 AMPS V O See Table STYLE STAMP 25 F57G Edal, Polarity symbol, P/N EQUTV. TO P/N 1N1143A 1N1146 1N1147 1N1148 1N1149 - EXCEPT PIV KV o (Amps)- 6.0
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30ts71l1n1143a1n11471n1148+41n1149manufacturer1n1143an 4148edal
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1N1149
Abstract: AS4A 1N1147
Contextual Info: MIL SPECS I OODDiaS 7 | INCH-POUND NOTICE OF VALIDATION MIL-S-19500/254A ER NOTICE 1 29 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N1147 AND 1N1149 Military specification MIL-S-19500/254A(EL), dated 6 February 1968 has been reviewed and determined to be valid for use in
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00d0iasmil-s-19500/254a1n11471n1149+5mil-5-19500/254amil-s-19500/2541nu49961-aas4a
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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2N2222A mps
Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71
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1n34a1n55ab1n1001n102+161n1031n1041n1071n1081n111/1n1172n2222a mps2n512ab2n2222 mps1n10961n5891n4007 - 2n40012n698 scr1n233a1n204612n3304
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114fd6666 diodediode by1001n4q07ba100 diodeby164bb139bay38diode aa1191s184 diode1n82
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1N2637
Abstract: 1N1752 L0750 1N1148 IN175 1N1109 1N1133 1N1239 1N1746 1N2389
Contextual Info: microsemi corp/ r p 14E D I bllb04D ODGQOHS n J lc RO A MICROS EMI COMPANY T - 01 - a t High Voltage Cartridge Rectifiers Fuse Type Maximum reverse current @ 25° C and rated voltage, 10 pA D.C. LENGTH PART NO. JEOEC PART NO. PRV VOLTS DC FORWARD DROP ' VOLTS
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bllb04din11081n1109tn1110+141n11um1t121n1t131n11331n17451n11341n26371n1752l07501n1148in1751n12391n17461n2389
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1N1373R
Abstract: 10191RA 1N600 1N1052 1N1059 3AF1 1N1056 1N1695 ZENER 18-2 5t HVC1800
Contextual Info: JEDEC TO SARKES TARZIAN RECTIFIER CROSS REFERENCE Jedec No. S. T. Type No. 1N248 1N248A 1N248B 1N248C 1N249 1N249A 1N249B 1N249C 1N250 1N250A 1N250B 1N250C ST3A10P ST410P ST410P ST410P ST3A10P ST410P ST410P ST420P ST3A20P ST420P ST420P ST420P 1N253 1N254 1N255
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1n2481n248a1n248b1n248c+161n2491n249a1n249b1n249c1n2501n250a1n1373r10191ra1n6001n10521n10593af11n10561n1695zener 18-2 5thvc1800
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114ba100 diodeba102aay20b2m1-51n2528ph1021oa210 diodediode aa116bb105gaz17
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