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Harris Semiconductor


Harris Semiconductor HGT1S12N60B3D Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGT1S12N60B3D		400		1	1 - 10 - 100 $1.60 1000 $1.33 10000 $1.18	Buy Now
Harris Semiconductor HGT1S12N60B3DS Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGT1S12N60B3DS		1,100		1	1 - 10 - 100 $1.22 1000 $1.09 10000 $1.02	Buy Now

12N60B3D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
12n60b3d Abstract: 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334 Contextual Info: 12N60B3D, 12N60B3D, 12N60B3DS in t e r r ii J a n u a ry . Data Sheet 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar	OCR Scan	12n60b3d hgt1s12n60b3ds ta49171 ta49188 +712n60b3 zener diode lt 432 12n60 hgt1s12n60b3ds9a hgtg12n60b3d hgtp12n60b3d tb334	PDF
HGTP12N60B3D Abstract: 12N60B3 12n60b TA49188 TB334 12N60B3D HGT1S12N60B3DS HGT1S12N60B3DST HGTG12N60B3D Contextual Info: 12N60B3D, 12N60B3D, 12N60B3DS Data Sheet September 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	hgtg12n60b3d hgtp12n60b3d hgt1s12n60b3ds 150oc +7ta49171 ta49188 12n60b3 12n60b tb334 12n60b3d hgt1s12n60b3dst	PDF
12n60b3d Abstract: HGTP12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334 Contextual Info: 12N60B3D, 12N60B3D, 12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	hgtg12n60b3d hgtp12n60b3d hgt1s12n60b3ds 150oc +5ta49171 ta49188 12n60b3d hgt1s12n60b3ds9a tb334	PDF
TA49171 Abstract: IGBT JUNCTION TEMPERATURE CALCULATION Contextual Info: 12N60B3D, 12N60B3D, 12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	hgtg12n60b3d hgtp12n60b3d hgt1s12n60b3ds 150oc +3ta49171 ta49188 igbt junction temperature calculation	PDF
MJ-112 Abstract: T1S12 mosfet 600v 10a to-220ab Contextual Info: 12N60B3D, 12N60B3D, 12N60B3D, 12N60B3DS HARRIS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description This family of MOS gated high voltage switching devices com bine the best features of MOSFETs and bipolar transis	OCR Scan	hgtg12n60b3d hgtp12n60b3d hgt1s12n60b3d hgt1s12n60b3ds +6ta49171 ta49188 1-800-4-harris mj-112 t1s12 mosfet 600v 10a to-220ab	PDF
12n60b3d Abstract: HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334 Contextual Info: 12N60B3D, 12N60B3D, 12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	hgtg12n60b3d hgtp12n60b3d hgt1s12n60b3ds 150oc +5ta49171 ta49188 12n60b3d hgt1s12n60b3ds9a tb334	PDF
Contextual Info: 12N60B3D, 12N60B3D, 12N60B3D, 12N60B3DS uADQie rw o S E M I C rtru O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Description Features This fam ily of MOS gated high voltage switching devices	OCR Scan	hgtg12n60b3d hgtp12n60b3d hgt1s12n60b3d hgt1s12n60b3ds +3ta49171 ta49188 1-800-4-harris	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-intersil ms-012aa mo-153aa rf1k49090 +16rf1k49093 rf1k49092 itf87056dqt itf87072dk8t itf87008dqt rf1k49223 65e9 transistor transistor 75307d transistor 65e8 sd mosfet drive datasheet 4468 8 pin g40n60 rhr15120 equivalent 10n120bnd 76107d transistor 76121d emerson three phase dc motor driver service note	PDF
12N60B3D Abstract: HGT1S12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334 Contextual Info: 12N60B3D, 12N60B3D, 12N60B3D, 12N60B3DS Semiconductor 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices	Original	hgtg12n60b3d hgtp12n60b3d hgt1s12n60b3d hgt1s12n60b3ds +6150oc ta49171 ta49188 12n60b3d hgt1s12n60b3ds9a tb334	PDF
12N60B3 Abstract: 12n60b3d Contextual Info: 12N60B3D, 12N60B3D, 12N60B3D, 12N60B3DS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices	Original	hgtg12n60b3d hgtp12n60b3d hgt1s12n60b3d hgt1s12n60b3ds +6150oc ta49171 ta49188 1-800-4-harris 12n60b3 12n60b3d	PDF