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10ITIA Datasheets Context Search
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2SK1275
Abstract: D0135
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q0132t0-220fmtc-252sk1275+1 | |
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Contextual Info: PDM41096S PDM41096L Paradigm 4 Megabit Static RAM 512Kx 8-Bit Features Description □ High speed access times Com'l: 15,17, 20, 25, 35 and 45 ns Ind: 17, 20, 25, 35, and 45 ns The PDM41096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. This product is |
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pdm41096spdm41096l512kxpdm41096+2 | |
MARKING CODE B21Contextual Info: TM C e n tra 1 CMPT2369 Sem i c o n d u c t o r C o r p . DESCRIPTION: NPN SILICON TRANSISTOR The C ENTRAL S E M IC O N D U C TO R CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, |
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cmpt2369ot-2310itia100ma+2 | |
LTC2721R
Abstract: LTS2801AR LTS-2801AR LTD2601R lts2301ar 2710p LTC2000 20/common cathode 7 segment led
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lts-2x01altd-2000ltc-2000ltc2721r+7 | |
M37700MContextual Info: MITSUBISHI MICROCOMPUTERS M 37704M 2A XXXFP M37704M2-XXXFP and M37704S1FP are respectively unified into M37704M2AXXXFP and M37704S1AFP. |U |5 Iw iw 7 7 a a 4 S 1 A F P S IN G L E -C H IP 1 6 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION APPLICATION The M37704M2AXXXFP and M37704S1AFP are single-chip |
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37704mm37704m2-xxxfpm37704s1fpm37704m2axxxfp+4 | |
SST4400
Abstract: transistor bI 240 2n4401 C31 2n4401 smt 2n4401 die
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ot323500ma150masst4400+4 | |
ltsd
Abstract: 50801G 50801HRB LTS-50302A 4 pin multicolor led LTS50301HRB
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lts-50000lts-50301/50801sing30lts-50302a/50802a+6 | |
70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
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2sa11622sa11632sc18152sa1015+16 | |
SLR-505Contextual Info: SLR-505 Series F / Light Emitting Diodes SLR-505 J5WJ^‘ £ K - A - 7 > 7 9 ( ^ 5.0 mm Reflecting Low-Dome Lamps S e rie s • \l" > ± 0 / Dimensions (U nit: mm) SLR-505 v ' J - X l t , 5 m m t' 7 i ^ > W i n J e t L * 7 > 7 T 'T o •SLR-505 series represents lamps that |
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slr-505 | |
ECG956
Abstract: ecg voltage regulator 3v ecg voltage regulator 5v ECG diodes T-58-H ECG966 circuit diagram of 12v battary charger
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00044mecg956t--58--11--23d0g4451+6 | |
FMMT491
Abstract: FMMT591
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fmmt591355mflfmmt491100ma+3 | |
SG-2BCContextual Info: P H O T O IN T E R R U P T E R S ^ ^ J Reflect type SG114F2 sG -n4 F2 a, k DIMENSIONS Unit:mm &s m m m 7 * btcfsMmz?* F-fe>-y-t\ The SG-114F2 reflective sensor combines a G aA s IR E D with a high-sensitivity phototransistor in a super-mini package, reducing installation space. |
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sg114f2sg-114f2mm-25tm220kq+2 | |
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Contextual Info: Central' Semiconductor Corp. CMPT2222A NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and |
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cmpt2222aot-23 | |
VM-50V
Abstract: HJU7221K10-92 IIJU7221U NJU7221 7221l vm42
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nju7221hju7221k10-92iiju7221us0t-88+3 | |
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Contextual Info: •'.ONI HTLS LTD ES 3?hûS01 DOOÜGTl S 16ML PLESSEY T-3>- A5" Three Five Product Information GaAs Dual Gate MESFET P 35-1310 The versatile dual gate MESFET has been designed for improved performance and is ideally suited for: Applications • Automatic gain control |
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Contextual Info: Central Semiconductor Corp. CZT5401 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high volt age amplifier applications. |
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czt5401ot-223cp71626-september | |
marking code 359 sot-23
Abstract: C2F SOT23 sot-23 Marking LG C2f TRANSISTOR 359 sot23
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cmpt2907aot-23150mamarking code 359 sot-23+4 | |
11d2
Abstract: C1770 h11dx C1775 transistor C1775
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h11d1h11d2h11d3h11dx+7 | |
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Contextual Info: Central" Sem iconductor Corp. CMPT4033 PNP SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CMPT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general |
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cmpt4033ot-2310itia150ma+2 | |
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Contextual Info: T Z ^ Y ^1 jT , P H O T O iN T E R R U P T E R S J T ransm it typ e SG-212 SG-212B, DIMENSIONS Unit:mm F O ^ T ^ T 't o The SG-212 is a photointerrupter consisting of G aA s IR E D and phototransistor. $§ft FEATURES • S 'M I • 0.4mm aperture • Easy to mount on P.C .B. |
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sg-212sg-212b | |
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Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 ÏT TOSHIBA dF | ^017250 □□□□45b DISC R ETE/O PTO 39C 00426 T -3 i~ /7 O UHF~ S '' X K o ¡a f fi * * v f - v r f à O U H F ~ S Band Low N o i s e Amp l i 1 e r App 1 i c a t i one O Hi gh Sp e e d S w i t c h i n g A p p l i c a t i o n s |
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2sc15522s0155z | |
LTS546AP
Abstract: LTS-546AP LTS546AR 5250P 5250G LTD5250R LTC5336G LTS546AHR s/ksmh12/2.27/30/5836E
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lts-540altd-5200ltc-5300/5800ltd-5000+10 | |
LTS-3400L
Abstract: LTS3403L LTS34 numeric led display LA 14102 seven-Segment LED
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lts-3400llts3403llts34numeric led display+2 | |
DIODO S04
Abstract: DIODO RU 30 A DIODO SIEMENS RU75 sfh600-2 siemens 22 DIODO AN 5218 diode S6 SMA diodo jb
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e52744sfh600sfh600-2sfh600-3+9 | |