CZT5401 Search Results

CZT5401

Contextual Info: CZT5401 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401 is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

CZT5401

Contextual Info: Central CZT5401 TM Semiconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

CZT5401

Contextual Info: CZT5401 SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401 is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

RS10100

Abstract: CZT5401
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT5401 SOT-223 TRANSISTOR PNP FEATURES Power dissipation PCM: 1 1. BASE W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current ICM: -0.6 A Collector-base voltage

Contextual Info: Transistors SMD Type Product specification CZT5401 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector

5401 transistor

Contextual Info: Ce n t r a 1 TM C Z T 5401 Sem i c o n d u c t o r C o r p . PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

CZT5401

Contextual Info: CZT5401 PNP Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5401 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 4 0 1 Date Code B C E Min.

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Contextual Info: Central TM Semiconductor Corp. CZT5401 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

Contextual Info: Central CZT5401 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

Contextual Info: Central" CZT5401 Semiconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: ^TT The CENTRAL SEMICONDUCTOR CZT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

Contextual Info: Central Semiconductor Corp. CZT5401 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high volt­ age amplifier applications.

CZT5401

Contextual Info: CZT5401 CZT5401 SOT-223 TRANSISTOR PNP FEATURES Power dissipation 1. BASE PCM: 1 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current A ICM: -0.6 Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 CZT5401 TRANSISTOR PNP FEATURES   1. BASE High Voltage High Voltage Amplifier Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: CZT5401 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401 is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

Contextual Info: CZT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401E is a PNP Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications

CZT5401

Contextual Info: Central CEN1154 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN1154 is a selected version of the CZT5401 Surface Mount PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a

CZT5401

Contextual Info: CZT5401 CZT5401G SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401 and CZT5401G are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

Contextual Info: CZT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401E is a PNP Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications

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Abstract: CZT5401E CZT5551E
Contextual Info: Central CZT5401E TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401E is a PNP Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown

CZT5401

Contextual Info: Transistors SMD Type PNP Silicon Transistor CZT5401 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector

Contextual Info: Central" CZT5401 Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEM ICO N D U CT O R CZT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

Contextual Info: Central CZT5401 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

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Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

2N5401

Abstract: transistor 2N5401 CMPT5401 CP716 CXT5401 CZT5401
Contextual Info: PROCESS CP716 Central Small Signal Transistor TM Semiconductor Corp. PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS