Q0132 Search Results

2SK1275

Abstract: D0135
Contextual Info: MMTbSGS Q0132Ö4 7Tb • H I T 4 2SK1275SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES # Low On-Resistance # High Speed Switching 1. # Low Drive Current # No Secondary Breakdown # Suitable for Switching Regulator and Gate 2. D ra in 3. Source

2SK1275

Contextual Info: MMTbSGS Q0132Ö4 7Tb • H I T 4 2SK1275SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES # Low On-Resistance # High Speed Switching 1. # Low Drive Current # No Secondary Breakdown # Suitable for Switching Regulator and Gate 2. D ra in 3. Source

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TTbMlMB 001325^ aflfl ■ S M G K KM44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C1OOOAL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory.

qml-38535

Abstract: qml38535
Contextual Info: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION LTR REV SHEET REV SHEET 15 REV REV S TA TU S OF SHEETS 1 SHEET 2 3 4 5 PREPARED BY Thanh V. Nguyen PMIC N/A STANDARD MICROCIRCUIT DRAWING 9 10 11 12 13 14 DEFENSE ELECTRONICS SUPPLY CENTER D A Y T O N , OHIO 4 5 4 4 4

2SK1200

Contextual Info: • 2SK1200 44clbEGS 0013233 534 ■ H I T 4 HITACHI/COPTOELECTRONICS blE » S ILIC O N N -C H A N N E L M OS F E T HIGH SPEED POWER SWITCHING ■ FEATURES 1. Gate 2. Drain Flange) 3. Source • Low On-Resistance • • High Speed Switching Low Drive Current

N25A

Abstract: 2SK1232 2SK1231
Contextual Info: blE 2 S K 1 2 3 1 D • , 2 44^205 S DOlBEbS 644 IHIT4 K 1 2 3 2 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown 1.

busdec

Abstract: RCS01
Contextual Info: SSI 78Q8373 ¿ é m S u s k m s 3V, 5V PCMCIA Ethernet Combo ' A TDK Group/Company Preliminary Data January 1995 DESCRIPTION FEATURES The SSI 78Q8373 is a highly integrated Ethernet 1Ctor use in PCMCIA Personal Computer Memory Card International Association applications and can

320C80-50

Abstract: SPRS023 Video controller TMS320C80 C8050 0x0000B800 RASH ujt timer ujt timer CIRCUIT TMS320C80 320C80-40
Contextual Info: TMS320C80 MULTIMEDIA VIDEO PROCESSOR SPRS023-J U L Y 1994 Single-Chip Parallel MIMD DSP Over 2 Billion RISC-Like Operations per Second GF PACKAGE B O TTO M V IE W 2 1 AP AM AK AH 4 Parallel Processors - 32-Bit Advanced DSP (ADSP) Processors - 64-Bit Opcode Provides Many Parallel

Q01327

Abstract: 8051 midi wireless keyboard 8051
Contextual Info: GENERAL DESCRIPTION The FDC37C957FR incorporates an 8051 based keyboard controller; a Flash Interface; four PS/2 ports; real-time clock; SMC's true CMOS 765B FDC w ith advanced digital data separator and 16 byte data FIFO; tw o 16C550A compatible UARTs, the second UART

Contextual Info: IN T E G R A T E D C IR C U IT S UC1625 UC3625 U N IT R O D E Brushless DC Motor Controller FEATURES DESCRIPTION Drives Power MOSFETs or Power Darlingtons Directly 50V Open Collector High-Side Drivers Latched Soft Start High-speed Current-Sense Amplifier with

l6703

Abstract: L6283 l6278 L6284 L6916 l6262 A1658 SVC 561 14 C3041 A1671
Contextual Info: RVCT 3.1 Build Tools - Errors and Warnings March 2008 Introduction This document lists the errors and warning messages that can be generated by the Build Tools of the ARM RealView Compilation Tools RVCT version 3.1, including patches. RVCT 3.1 is provided with RVDS

L6284

Abstract: A1273 L6283 a1046 L6278 L6559 l6262 a1583e A1154 a1273* transistor
Contextual Info: RVCT 2.0 Build Tools - Errors and Warnings Release 1.0 – 27th August 2003 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 2.0 and later. If you are using ADS ADS 1.2, 1.1 or 1.0.1 or RVCT 1.2

2SK1202

Abstract: TTL-T100
Contextual Info: 2SK1202- • L|inb2ü5 ÜD13241 30Q ■ H I T M HITACHI/ OPTOELECTRONICS blE D" SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES 1.G ate, 2 .D rain (Flange) 3. Source (Dimensions in nm ) ■jP • Low On-Resistance • High Speed Switching

Contextual Info: 24C65 M ic r o c h ip 64K 5.0V CMOS Smart Serial EEPROM FEATURES PACKAGE TYPE • Voltage operating range: 4.5V to 5.5V - Peak write current 3 mA at 5.5V - Maximum read current 150 fiA at 5.5V - Standby current 1 nA typical • Industry standard two wire bus protocol, PC™

l6703

Abstract: asm 1442 L6916E SVC 561 14 L6232E A1659 a1718 a1694 C2068 STR 6765
Contextual Info: RVCT 3.0 SP1 Build Tools - Errors and Warnings Last updated March 2008 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 3.0, 3.0 Service Pack 1, and subsequent 3.0 patches. If you are using ADS

L6283

Abstract: L6278 l6703 L6916 A1273 L6320W 0496B L6252 L6324 A1671
Contextual Info: ARM Compiler toolchain Version 4.1 Errors and Warnings Reference Printed on: October 25, 2010 Copyright 2010 ARM. All rights reserved. DUI 0496B ID102510 ARM Compiler toolchain Errors and Warnings Reference Copyright © 2010 ARM. All rights reserved.

l6703

Abstract: A1659 L6361 L6352 L6916 C3335 C3331 c3317 A1652W A1671
Contextual Info: RealView Compilation Tools Version 4.0 Errors and Warnings Reference Copyright 2010 ARM. All rights reserved. DUI 0495A ID041910 RealView Compilation Tools Errors and Warnings Reference Copyright © 2010 ARM. All rights reserved. Release Information

2SK1197

Contextual Info: LIE D 2 S K 1197 • 4 4 ^ 2 0 5 001325b 0T4 ■ H IT 4 H IT A C H I/ O P T O E L E C T R O N IC S SILICON N-CHANNEL ENHANCEMENT MOS FET rrrtT HIGH FREQUENCY AMPLIFIER ■ FEATURES • High Electro-static Destruction Voltage {C — 200 pF) — Gate to Source Voltage 500 V typ.

Contextual Info: M 24AA65 ic r o c h ip » 64K 1.8V CMOS Smart Serial EEPROM FEATURES PACKAGETYPE • Voltage operating range: 1.8V to 6.0V - Peak write current 3 mA at 6.0V - Maximum read current 150 ¡iA at 6.0V - Standby current 1 nA typical • Industry standard two wire bus protocol PC™

Contextual Info: SAMSUNS ELECTRONICS INC bM E T> TTbMlME DD135G7 =lflT H S H 6 K CMOS DRAM KM41C4002A 4 M X 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KM41C4002A is a high speed CMOS 4,194,304 bit X 1 Dynamic Random Access Memory.

CXA1610M

Abstract: sony cxa1610m
Contextual Info: S O N Y CXA1753M l-V Photo 1C for CD Player Description Package Outline Unit: mm The CXA1753M is a photo IC developed as a photo detector for the optical pickup of CD players. It has a built-in l-V amplifier, and features low output impedance for stable output.

A1273

Abstract: l6703 power transistor mrc 438 L6232E 2 607 335 254 a1273* transistor ARM10200 c2874 L6726 l6232
Contextual Info: RVCT 2.2 Build Tools - Errors and Warnings Release 2.0 – 19th September 2005 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 2.2 and later. If you are using ADS ADS 1.2, 1.1 or 1.0.1 or RVCT 1.2

C2335

Abstract: C2331 C2458 C2491 C2314E C2021E C2275 C2271 C2987 C2499
Contextual Info: ADS 1.2 Build Tools - Errors and Warnings Release 1.2 - 2nd September 2003 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM Developer Suite ADS version 1.2 and the RealView Compilation Tools (RVCT) version 1.2. Many of

DS1630AB-120

Abstract: DS1630AB-100 DS1630AB120
Contextual Info: DS1630Y/AB DALLAS D S 1 6 3 0 Y /A B Partitionable 256K NV SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or